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研究生：	林盟善 Lin, Meng-Shan
論文名稱：	以氮化鋁為壓電層之薄膜型塊體聲波諧振器 Thin Film Bulk Acoustic Wave Resonators Using AlN as the Piezoelectric Layer
指導教授：	吳朗 Wu, Long 黃正亮 Huang, Cheng-Liang
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2003
畢業學年度：	91
語文別：	中文
論文頁數：	82
中文關鍵詞：	氮化鋁、薄膜型塊體聲波諧振器
外文關鍵詞：	FBAR, Thin Film Bulk Acoustic Wave Resonator, AlN
相關次數：	點閱：66 下載：15
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本論文使用黃光顯影製程、乾式蝕刻法與反應性射頻磁控濺鍍法來沉積電極與氮化鋁壓電薄膜來製作薄膜型塊體聲波諧振器(Film type bulk acoustic wave resonators，FBAR)。本文所製備的薄膜型塊體聲波諧振器包含多層結構。使用LPCVD沉積振動板(membrane)的薄膜材料Si3N4於p型矽晶圓上，並以此當作蝕刻罩。利用黃光顯影製程在光阻上轉移蝕刻窗口圖形至矽晶圓，再利用感應耦合式電漿蝕刻(ICP)進行乾式蝕刻製程，以完成聲波空腔(acoustic cavity)及振動板構造製作。待蝕刻完成後，利用黃光顯影製程轉移下電極的圖案於晶圓上，再濺鍍不同金屬薄膜作為底電極。之後利用切割機將矽晶圓切割成所要的晶片大小(1cm2)。再濺鍍沉積具有高c軸優選指向性的氮化鋁作為壓電薄膜，然後進行上電極的黃光製程，最後沉積鋁薄膜作為上電極，如此便完成了多層結構的薄膜型塊體聲波諧振器。
本論文使用X光繞射儀來鑑定薄膜的晶向；並輔以掃描式電子顯微鏡觀察薄膜剖面型態；使用網路分析儀來量測諧振器的特性與諧振頻率。
研究結果顯示，以Si3N4作為振動板，板厚度為2000 Å，使用電極大小為1.96 105μm2，以鉬為底電極厚度為1000 Å，上電極鋁厚度為1800 Å，而壓電層氮化鋁的厚度為1.35μm所製備的FBAR元件，所量得的諧振頻率約為3.47GHz 。並可利用調變電極的種類、厚度，以及調變壓電層的氮化鋁品質，來改變元件的特性。

This paper reports on a film type bulk acoustic wave resonator (FBAR) fabricated by lithography, dry etching and RF magnetron sputtering of aluminum nitride (AlN) films. First, we use LPCVD to deposition Si3N4 as the membranes and the mask for etching on the P-type silicon wafer. The acoustic cavity is made by inductively coupled plasma (ICP) etched. The bottom electrode was deposited by using RF magnetron sputtering. In this paper, we use three different metals for the bottom electrodes. Then we deposition highly C-axis-oriented and fine structural AlN films as the piezoelectric layer. Finally the top electrode was grown.
In this paper, the crystallography of the coated films was analyzed by x-ray diffraction and by operating the scanning electron microscope for the film cross-sectional properties. The network analyzer is used to measure the characteristic of FBAR.
FBAR devices, which consisted of 1.35μm AlN, 0.1μm bottom electrode (Mo), 0.18μm top electrode (Al), and 0.2μm of Si3N4 membrane have a resonant frequency of 3.47 GHz in this paper. The experiment also successfully demonstrated that reducing the top electrode thickness would increase the resonant frequency, so that it is possible to tune a FBAR device to a specific frequency by carefully control of AlN and electrode thickness.

第一章	緒論...........................................1
第二章	原理...........................................5
    2.1聲波的運動方程式...................................5
    2.2壓電效應及壓電方程式...............................7
       2.2.1壓電現象之由來................................7 
       2.2.2壓電方程式....................................8
    2.3聲波在壓電體內的傳播..............................11
    2.4 Mason等效電路....................................16
       2.4.1非壓電平板的Mason等效電路....................17
       2.4.2壓電平板的Mason等效電路......................19
    2.5氮化鋁的結構與特性................................21
    2.6反應性射頻磁控濺鍍原理............................24
       2.6.1電漿原理.....................................24
       2.6.2直流電漿.....................................26
       2.6.3射頻磁控的原理及特性.........................27
       2.6.4反應性濺射模型...............................28
       2.6.5動力學分析...................................29
       2.6.6鍍層的成核...................................30
    2.7 X光繞射分析......................................30
    2.8掃描式電子顯微鏡分析..............................31
    2.9原子力顯微鏡分析..................................32
    2.10蝕刻.............................................33
       2.10.1乾式蝕刻....................................34
         2.10.1.1感應耦合式電漿..........................35
         2.10.1.2影響ICP電漿蝕刻之參數...................37
       2.10.2濕式蝕刻....................................38
         2.10.2.1 Si非等向性濕式蝕刻.....................38
    2.11薄膜型塊體聲波諧振器.............................40
       2.11.1工作原理....................................40
       2.11.2薄膜型塊體聲波諧振器的電特性................42
第三章	實驗方法與步驟................................44
    3.1實驗步驟..........................................44
       3.1.1晶片清洗.....................................44
       3.1.2低壓氣態沉積沉積蝕刻罩.......................47
       3.1.3感應耦合式電漿蝕刻...........................47
       3.1.4濺鍍下電極金屬薄膜...........................48
       3.1.5切割晶片.....................................48
       3.1.6濕式蝕刻.....................................48
       3.1.7矽晶片清洗...................................49
       3.1.8黃光微影製程.................................49
    3.2薄膜成長..........................................50
       3.2.1濺鍍系統簡介.................................50
       3.2.2薄膜沉積.....................................52
    3.3量測系統..........................................55
第四章	實驗結果與討論................................57
    4.1蝕刻聲波空腔......................................57
    4.2薄膜濺鍍..........................................58
       4.2.1濺鍍上電極金屬鋁薄膜.........................58
       4.2.2濺鍍壓電層氮化鋁薄膜.........................59
         4.2.2.1射頻濺鍍功率的影響.......................59
         4.2.2.2氮氣濃度的影響...........................61
         4.2.2.3濺鍍氮化鋁厚度的影響.....................62
    4.3元件的電特性分析..................................67
       4.3.1壓電層氮化鋁的影響...........................67
         4.3.1.1濺鍍氮化鋁厚度的影響.....................67
         4.3.1.2濺鍍氮化鋁功率的影響.....................69
       4.3.2電極種類的變化...............................69 
       4.3.3改變上電極厚度的影響.........................70    
第五章	結論..........................................75
參考文獻 ................................................77
                                    

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