本論文中提出將strain Si成長於SiGeC上，因為碳(C)原子的存在將可大幅減少Buffer layer的厚度，並且增加鍺(Ge)的高溫穩定性與strain Si臨界厚度。然後 利用strain Si 的高移動率在n(100)單晶矽基板上研製p-strain Si/i-Si1-x-yGexCy /n(100)-Si結構作為高速的紅外線光感測器。
　　吾人利用不同流量(3, 5, 7 sccm)的GeH4研製出三種不同形式的紅外光感測器。在常溫下這些感測器於漏電流分別小於2.53x10-4A, 7.1x10-4A 和 6.78x10-4A之下測得的崩潰電壓各為49V, 42V 和 35V。與已報導的元件比較這些感測器具有較高的崩潰電壓。
　　在室溫下及1Mw功率， 632.8nm 波長的雷射照射於-35V, -30V和 -25V的偏壓時這些感測器量得光電流及暗電流分別為5.63x10-3A, 6.88x10-3A， 8.22x10-3A和2.53x10-4A, 7.1x10-4A 和 6.78x10-4A。也就是光暗電流比可達3860, 53.2和 54.9。如此證明本論文所研發的p-strain Si/i-Si1-x-yGexCy /n(100)-Si結構可應用於高速高壓紅外光感測器。

　　The thesis reports the study of development a p-strain Si/i-Si1-x-yGexCy/n(100)-Si heterostructure on n(100) silicon substrate for high speed infrared detecting applications in detail. Three types infrared photo detectors have been developed with various GeH4 gas flow rate of 3, 5, 7 sccm respectively. At room temperature, and biases of -35V, -30V and -25V, the photocurrents of the detector under illumination of 1mW, infrared light (632.8nm)/dark currents are 5.63x10-3A/2.53x10-4A, 6.88x10-3A/7.1x10-4A,and 8.22x10-3A/ 6.78x10-4A, respectively. This means the typical photo/dark current ratios under the room temperature are 3860, 53.2 and 54.9 respectively. Furthermore, the detectors have reverse breakdown voltages of 49V, 42V, and 35V, respectively, which are higher than the reported one. Therefore, the developed p-strain Si/i-Si1-x-yGexCy/n(100)-Si heterostructure on n(100) silicon substrate is available for high voltage and high speed infrared detecting applications

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