在本論文中，我們成功利用低壓有機金屬化學氣相沉積法成長並研製一系列磷化砷銦鎵異質結構場效電晶體及檢光二極體。在磊晶晶膜成長上，我們獲得高品質及高均勻性之晶膜材料；在元件製程上，我們所研製之元件皆具有良好之直流及交流操作特性。而這些良好特性驗証了我們所研製之元件，相當適合應用在無線微波通訊及光纖通訊上。磷化砷銦鎵材料與磷化銦基板具有極佳的晶格匹配，更值得注意的，磷化砷銦鎵材料相對應波長含蓋可從920至1650(In0.53Ga0.47As)nm(能隙可從1.35至0.75eV)，可藉由改變不同組成而獲得不同應用需要之材料，並已在許多相關光電及光纖通訊應用上獲得極佳之特性表現。
首先，我們以低壓有機金屬化學氣相沉積法進行磊晶晶膜材成長研究，同時利用一系列之量測分析以確認成長晶膜之優劣。由於有機金屬化學氣相沉積機台之反應腔為一行星式之設計，使得晶片成長時具有自轉及公轉的功能，進行改善晶膜成長之均勻性，其中在本研究中，晶膜厚度均勻性可控制在百分之五；晶膜晶格不匹配可控制在500ppm；以二吋晶圓四元磷化砷銦鎵材料其波長均勻性可控制在5nm。此外，在砷化銦鎵材料其電子移動率可高於12000cm-2/v•s及背景濃度可低達7x1014 cm-3，而這些研究結果已可與其他著名研究相媲美。由於這些高品質之磊晶材料使得在後續元件成長及製程上獲得相當大的幫助。
接著，我們研製具不同結構之磷化砷銦鋁/砷化銦鎵異質結構場效電晶體，探討不同通道結構對元件特性上之影響及差異，實驗結果顯示，漸變式通道結構(GCHEMT)在元件線性度可獲得相當不錯的表現，閘極電壓擺幅可達0.9V，而擬晶通道結構(PCHEMT)直流增益可達302mS/mm，此外，對擬晶通道結的構蕭基層薄化以獲得增強型操作模式之特性，並控制閘極偏壓來改變閘極與通道間之電場，相電場夠大時，將使得通道裡的載子受到吸引進而穿隧至閘極，導致電流下降及負微分電阻的產生。摻雜通道場效電晶體結構(DCFET)不僅具有良好的高溫度操作特性，同時元件具高直流增益(291mS/mm)、高閘極擺幅(1.05V)及高崩潰電壓(20.2V)等良好特性；此外，單原子層摻雜高電子移動率場效電晶體(DDHEMT)加入V型漸變式摻雜設計，不僅具有極佳的直流增益(384mS/mm)及飽和電流(720mA/mm)，同時在高頻響應上亦有不錯的表現。我們所製作之元件皆具有相當不錯的直流及交流特性，此一結果代表了我們所研製之元件具有在微波通訊應用上的價值。
最後，我們研製一系列具不同覆蓋層之磷化砷銦鋁/磷化銦檢光二極體。實驗結果得知，高品質In0.53Ga0.47As 及 In0.66Ga0.34As0.73P0.27吸收層材料背景濃度可低達4.5x1013 及2.4x1014 cm-3，此外，以能隙較大之材料作為覆蓋層將獲得較低之暗電流，因此，在以磷化銦做為覆蓋層的結構上獲得最低之暗電流特性(4.2x10-7A/cm2)，同時，由於覆蓋層具較大之能隙，相對減少覆蓋層之吸光效果，使得入射之光源更容易被吸光層所吸收，進而獲得較佳之元件特性。

In this dissertation, we have successfully fabricated and investigated InP-based InGaAsP heterostructure field-effect transistors (HFET's) and p-i-n photodiodes (PIN-PD's) grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The characteristics of InAlAs/InGaAsP HFET's and InGaAsP/InP PIN-PD's are measured and discussed.
We describe the properties of the planetary MOCVD reactor. The growth parameters and characteristics of the epi-layers are discussed and analyzed. A series of specialized measurements, including double-crystal x-ray diffraction (DCXRD), photoluminescence (PL), Hall measurement, electrochemical capacitance-voltage (ECV) profile, Lehighton and Surface-scan are used to qualify material characteristics. Improved material uniformities and qualities are demonstrated. Thickness uniformity of the epi-layer within 5%, wavelength uniformity of the quaternary InxGa1-xAsyP1-y layer within 5 nm and lattice mismatch of epi-layer kept within 500 ppm are achieved. Furthermore, the In0.53Ga0.47As layer background concentration lower than 7x1014 cm-3 and the electron mobility higher than 12000 cm-2/v•s are achieved.
InAlAs/InxGa1-xAsyP1-y high electron transistors (HEMT's) with various InxGa1-xAsyP1-y channels were demonstrated. Improved linearity characteristics are achieved in the structures utilizing compositionally graded InxGa1-xAs channel and composite InxGa1-xAsyP1-y triple channels due to the improved confinement and transport characteristics. By thinning the InAlAs barrier layer of PCHEMT, enhancement-mode operation is obtained. As the gate bias is sufficiently large, the device exhibits a pronounced N-shaped NDR behavior since hot electrons tunnel from the InGaAs channel layer to the gate electrode. On the other hand, an InAlAs/InGaAs doped channel field-effect transistor (DCFET) was fabricated to improve device linearity, current drivability and breakdown voltage. Experimentally, high transconductance, high current drivability, high linearity, low leakage current and high breakdown voltage are achieved due to the doped InGaAs channel, undoped InAlAs Schottky layer and good carrier confinement. Moreover, a delta-doped InAlAs/InGaAs HEMT with a graded InxGa1-xAs V-shaped channel (DDHEMT) is fabricated. The delta-doping carrier supply layer and graded V-shaped channel are used to enhance two-dimension electron gas (2DEG) density and mobility. Moreover, the improved carrier confinement in the channel is achieved. Experimentally, improved transport performance, including high transconductance, high current drivability, high linearity and high breakdown is achieved.
Finally, a series of planar InGaAs(P)/InP PIN-PD's were fabricated and demonstrated. High-quality and uniformity of the epi-layers are obtained. The measured concentrations of In0.53Ga0.47As and In0.66Ga0.34As0.73P0.27 (1.4 PQ) absorption layers are as low as 4.5x1013 and 2.4x1014 cm-3, respectively. Experimentally, the dark current is significantly reduced in the structure utilizing a wider-band-gap material of quaternary InxGa1-xAsyP1-y as a cap layer to reduce the device surface leakage current and dark current. In addition, the wide-band-gap cap layer may also reduce the incident light absorption in the cap layer, thus improving device responsivity. The PIN-PD's with a wide-band-gap InP cap layer in the InxGa1-xAsyP1-y material system can be expected to further improve device performances.

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