本論文為設計應用於K-band收發機之子電路設計，可分為兩個部分，分別為收發機開關電路與正交壓控振盪器電路。在本論文中設計之K-band收發機開關電路為使用WIN GaN 0.15 μm pHEMT製程實現，而K-band正交壓控振盪器使用TSMC 40 nm CMOS製程實現。
在K-band收發機開關電路設計中，開關電晶體的尺寸與控制電壓皆會影響收發機開關的特性，透過並聯電感產生諧振腔在特定頻段達到高隔離度效果並利用多個模態的共振結合技巧使隔離度頻寬增加。且另外設計第二版收發機開關多並聯一組到地電晶體比較改善隔離度的效果。在第一版收發機開關電路量測結果中，開啟電壓0 V、關閉電壓為-15 V且頻率範圍為20 GHz到28 GHz，中心頻率為24 GHz的情況下，插入損耗最佳值為1.8 dB，整體皆低於3 dB；隔離度整體皆大於30.4 dB為，P1dB為20 dBm。第二版收發機開關電路量測結果在插入損耗最佳值為2.3 dB，整體插入損耗皆低於3.1 dB；隔離度整體皆大於32.6 dB，P1dB為20 dBm。兩版收發機開關電路晶片面積皆為1.785 mm2。
K-band正交壓控振盪器電路主要由兩組壓控振盪器與緩衝器組成，透過將振盪器輸出訊號互相注入偶合電晶體產生四相位輸出訊號。量測頻率可調範圍從20.51 GHz ～ 24.74 GHz (18.6 %)。相位雜訊最佳表現在偏移處1 MHz與10 MHz為 -98.9 dBc/Hz與 -121.4 dBc/Hz，整體輸出功率皆大於 -8 dBm，核心功率消耗為27.1 mW，正交壓控壓控振盪器面積為1.41 mm2。

This thesis presents the sub-circuit designs of a K-band radio frequency transceiver, which can be divided into two parts, namely the transceiver switch circuit and the quadrature voltage-controlled oscillator circuit. The K-band TX/RX switch circuits designed in this thesis are fabricated by the WIN GaN 0.15 μm pHEMT process, while the K-band quadrature voltage-controlled oscillator is fabricated by the TSMC 40 nm CMOS process.
The first part is the design of the K-band TX/RX switch circuit. The size of the switching transistor and the control voltage will affect the characteristics of the TX/RX switch. The inductor in parallel with the switch transistor is used to form a resonant circuit to achieve high isolation at a particular frequency. Using multi-mode resonances combinatoin technique to increase the isolation bandwidth. In addition, the second version of the TX/RX switch is designed to add another parallel switching transistor to improve the effect of isolation. Both versions are measured in the same measurement environment, say, the turn-on voltage of 0 V, the turn-off voltage of -15 V, and the frequency range is 20 GHz to 28 GHz. The optimal value of insertion loss for the first version of transceiver is 1.8 dB, and the overall insertion loss is lower than 3 dB. The overall isolation is greater than 30.4 dB and P1dB is more than 20 dBm. The best value of insertion loss for the second version of the TX/RX switch is 2.3 dB and the overall insertion loss is less than 3.1 dB. The overall isolation is greater than 32.6 dB and P1dB is more than 20 dBm. The chip areas of both versions of the switch circuits are 1.785 mm2.
The second part of this thesis is the design of a K-band quadrature voltage-controlled oscillator which is mainly composed of two groups of oscillator cores and buffers. The four-phase output signals are generated by injecting the differential output signals into another oscillator coupled transistors core. The measurement environment is set at supply voltage of 0.81 V. The measured frequency tuning range is from 20.51 GHz to 24.74 GHz (tuning range of 18.6%). The best phase noise -98.9 dBc/Hz at 1 MHz offset and -121.4 dBc/Hz at 10 MHz offset from the center frequencies. The overall output power is greater than -8 dBm, and the core power consumption is 27.1 mW. The whole chip area is 1.41 mm2.

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