隨著電晶體閘極長度縮減，元件接面深度也必須隨之調整。本研究使用低能量離子佈植技術與低溫微波退火以達成超淺接面之製作。
本研究使用矽晶圓經過硼離子佈植(佈植能量400eV)後之試片，利用微波退火、快速熱退火與飛秒雷射退火進行活化及修復。本研究使用數種退火方式的組合，諸如微波退火、兩階段微波退火與微波+飛秒雷射退火。在兩階段微波退火的實驗中，第一階段使用高能量(2400瓦)的微波使矽晶圓表面的非晶層再結晶並增加微波吸收率，第二階段使用低能量(600瓦)的微波活化摻雜的硼。退火完成後使用四點探針量測片電阻值，穿透式電子顯微鏡觀察非晶層厚度，二次離子質譜儀觀察硼的擴散情形。
量測結果顯示經過兩階段微波退火的試片具有最佳的特性，片電阻值可降低至436 Ω/□，非晶層厚度縮減至3.56nm，在背景濃度5e18 atoms/cm2下硼的擴散深度為14nm，相較於退火前的結果幾乎沒有擴散發生。基於前述的量測結果，我們使用兩階段微波退火後的SOI(Silicon on Insulator)基板製作元件並進行電性量測。結果顯示元件的開關比(Ion/off ratio)可達2x106以上(VDS = -0.05 V)。

As gate length decreases, extension junction depth must also scale. In order to achieve ultra-shallow junction (USJ), low energy ion implantation and low temperature microwave annealing were used in this study.
In this study, microwave annealing (MWA) and femtosecond laser annealing (FLA) were employed to recover and activate boron (400eV) implanted silicon wafer. We used several annealing method, including MWA, two-step annealing of microwave and two-step annealing of MWA and FLA to anneal boron implanted silicon wafer. In two-step microwave annealing, 2400Watt high power microwave annealing was used in first step to regrow the amorphous layer to crystal silicon phase and enhance MWA absorption. After crystal silicon regrowth, 600Watt low power microwave annealing was used to activate implanted boron. After annealing, four-point probe was used to measure the sheet resistance, TEM cross-section image was used to investigate the SPER behavior, and SIMS was used to investigate the boron diffusion limitation.
According to result of analysis, we can know implanted silicon after two-step microwave annealing has the best characteristic. The sheet resistance of implanted and annealed wafer decreased to 436Ω/□, and the thickness of a-layer decreased to 3.56nm. The SIMS profile shows that the junction depth @5e18 atoms/cm2 was 14 nm, and it means boron barely diffuse after two-step microwave annealing. We used the two-step microwave annealed silicon wafer to make P-MOS device. The P-MOS device high current on/off ratio (Ion/off) is more than 2x106 (VDS = -0.05 V).

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