本論文主要研究金屬矽化物薄膜(矽化鎳與矽化鐿)熱退火處理後的特性分析，探討退火過程中薄膜的相變化與電性的關係，並將其應用於薄膜電晶體光偵測器的電極上。金屬矽化物使用多晶矽做為犧牲層較非晶矽的犧牲層形成的晶粒較大也較容易形成相轉變，而有較低的片電阻值，但也造成較小的熱製程窗口。場絕緣層使用氮化矽薄膜較二氧化矽具有較大的壓應力能抑制相轉變並能降低片電阻值。矽化鐿因有較低的功函數且多晶矽熱製程窗口較大，故薄膜電晶體的特性優於矽化鎳薄膜電晶體，但金屬鐿易與氧化層反應造成元件特性不佳，故元件場絕緣層以氮化矽替之。矽化鎳與矽化鐿分別在退火500處及600處時有最低的片電阻值。薄膜電晶體光偵測器以矽量子點薄膜與N型多晶矽為感光層，在 510nm 光照下，矽奈米結構量子點因其量子侷限效應與表面能態效應，可有效提升光偵測器之光電流。

This thesis reported on the application of metal silicide thin film to electrode of photodectors. The relationship between the phase transitions and sheet resistance of metal silicide films, nickel silicide and ytterbium silicide, were discussed. The sheet resistance of metal silicide with poly silicon as a sacrificial layer was lower than amorphous silicon due to the grain size increasing. The SiNx film as a field insulator layer had lager compress stress than SiO2 film. The compress stress suppressed the phase transition of metal silicide thin films and improved the thermal stability, resulting a low sheet resistance. The device characteristics of the thin film transistors (TFT) photodetector with YbSi electrode was better than NiSi electrode owing to low Schottky barrier height. The lowest sheet resistance of NiSi and YbSi films were annealed by rapid thermal annealing at 500℃ and 600℃. Si nanocrystal embedded in the activeT Schottky barrier height. The lowest sh photocurrent (510nm) owing to quantum confinement effect and the surface state effect.

參考文獻
[1] D. M. Brown, W. E. Engeler, M. Garfinkel, and P. V. Gray, “Self-aligned molybdenum gate MOSFET’s”, J. Electrochem Soc., 115, 874 (1968)
[2] K. L. Wang, T. C. Holloway, R. F. Pinizzotto, Z. P. Sobczak, W. R. Hunter, and A. F. Tash, Jr., “Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology”, IEEE Trans. Electron Device, 29, 547 (1982)
[3] J. N. Shive, “A new germanium photo-resistance cell,” Phs. Rev., 76, 575 (1949)
[4] J. N. Shive, “The properties of germanium phototransistors,” J. Opt. Soc. Am., 43, 239 (1953.)
[5] C. W. Chen, and T. K. Gustafson, “Characteristics of an avalanche phototransistor fabricated on a Si surface,” Appl. Phys. Lett., 39, 161 (1981)
[6] J. C. Campbell et al., “Avalanche InP/InGaAs heterojunction phototransistor,” IEEE J. Quantum Electron., 19, 1134 (1983)
[7] T. Moromoto, T. Ohguro, H.S. Momose, etc., T. Iinuma, I. Kunishima, K. Shguro.Etc., “Self-Aligned Nickel-Mono-Silicide Technology for High-Speed Deep Submicrometer Logic CMOS ULSI”, IEEE Trans. Electron Devices, 42, No.5, 915-923 (1995)
[8] V.Probst, H.Schaber, P.Lippens, L.Van den hove, and R. F. De Keersmaeckeer, “Limitations of TiSi2 as a source for dopant diffusion”, Appl. Phys. Lett., 52, 1803 (1988)
[9] J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J.Geiss, “Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2”, IEEE Trans. Electron Devices, 38, 26 (1991)
[10] Y. Matsubara, T. Horiuchi, and K. Okumura, “Activation energy for the C49-to-C54 phase transition of poycrystalline TiSi2 films with arsenic impurities”, Appl. Phys. Lett. , 62, 263 (1993)
[11] S. Motakef, J. M. E. Harper, F. K. Michel, G. all, and N. Herbots, “Stability of C49 and C54 phase of TiSi2 under ion bombardment”, J. Appl .Phys., 70, 1736 (1988)
[12] O. Thomas, P. Gas, F. M. d’Heurle, F. K. Michel, G. Scilla, “Diffusion of boron phosphorus, and arsenic implanted in thin films of cobalt disilicide”, J. Vac. Sci. Tech.A, 6, 1736 (1988)
[13] V. Probst, H. Schaber, A. Mitwalsky, H. Kabza, L. Van den hove, and K.M aex, “WSi2 and CoSi2 as diffusion sources for shallow junction formation in silicon”, J. Appl. Phts., 70, 708 (1991)
[14] O. Thomas, P. Gas, A. Charai, F. K. LeGoues, A. Michel, G. Scilla, F. M. d’Heurle, “The diffusion of elements implanted in films of cobalt disilicide”, J. Appl. Phys., 64, 2973 (1988)
[15] B.A. Juliesa, D. Knoesena, R. Pretoriusb, D. Adamsa, “A study of the NiSi to NiSi2 transition in the Ni-Si binary system”, Thin Solid Films, 347, 201-207 (1999)
[16] H. Iwai , T. Ohguro , S. i. Ohmi, “NiSi salicide technology for scaled CMOS”, Microelectronic Engineering 60 (2002) 157–169.
[17] D. Mangelinck, P. Gas, A. Grob, B. Pichaud, and O. Thomas, “Formation of Ni silicide from Ni(Au) films on (111) Si”, J. Appl. Phys. 79 (1996)
[18] G. Larrieu, D. A. Yarekha, E. Dubois, N. Breil, and O. Faynot, “Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI”, IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 12, DECEMBER (2009)
[19] J. M. Shieh, W. C. Yu, J. Y. Huang, C. K. Wang, B. T. Dai, H. Y. Jhan, C. W. Hsu, H. C. Kuo, F. L. Yang, and C. L. Pan, “Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector”, Appl. Phys. Lett., 94, 241108 (2009)
[20] H. G. Choi, Y. S. Choi, Y. C. Jo and H. Kim, “A Low-Power Silicon-on-Insulator Photodetector with a Nanometer-Scale Wire for Highly Integrated Circuit”, J. Appl .Phys., 43, No. 6B, 2004, 3916-3918. (2004)
[21] Donald A. Neamen, “Fundamentals of Semiconductor Physics and Devices” McGraw-Hill, 344 ( 2003)
[22] Donald A. Neamen, “Fundamentals of Semiconductor Physics and Devices” McGraw-Hill, 354-356 (2003)
[23] Yu- Long Jiang, Guo-Ping Ru, Xin-Ping Qu and Bing-Zong Li, “Oxidation Suppression for YbSi2-x Formation and New Method to Extract Schottky Barrier Height by Admittance Measurement”, IEEE. (2007)
[24] Shiyang Zhu, Jing Chen, M. -F. Li, S. J. Lee, Jagar Singh, C. X. Zhu, Anyan Du, C. H. Tung, Albert Chin and D. L. Kwong, “N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide”, IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST (2004)
[25] W. Knaepen, J. Demeulemeester, J. Jordan-Sweet, A. Vantomme, C. Detavernier, R. L. Van Meirhaeghe, C. Lavoie, “In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100) ”, American Vacuum Society, A 28, 20 (2010)