在本論文中，我們研製以分子束磊晶法成長具有兩種不同通道的In0.425Al0.575As/InxGa1-xAs變晶型(metamorphic)高電子移動率電晶體之特性。擬晶式(pseudomorphic)通道變晶型高電子移動率電晶體在高頻電路應用上可以獲得較佳的源極電流值(511 mA/mm)、外質轉導值(315 mS/mm)、高頻特性(fT=55.4 GHz，fmax=77.5 GHz)、以及低雜訊特性(NFmin=0.88 dB在2.4 GHz)。因此擬晶式通道變晶型高電子移動率電晶體適用於高頻及低雜訊電路的應用上。另一方面，由於擬晶式通道具有較大的導帶不連續性以及較佳的載子侷限能力，當溫度從300 K上升至500 K時，源極電流值下降了21.9﹪，外質轉導值下降了17.7﹪，因此顯示出極佳的熱穩定性。此外由於對稱型漸變式通道變晶型高電子移動率電晶體有效能隙比較高，所以可以獲得較佳的崩潰電壓(BVGD = -16.05 V, BVoff = 14.64 V, and BVon=10.9 V)，當溫度從300 K上升至500 K時，崩潰電壓(BVGD )下降了26﹪。對稱型漸變式通道可得到較佳的閘極電壓擺幅(GVS=1.3 V)以及良好的小訊號輸出功率(Gs=19.2 dB，Pout=14.9 dBm)，因此適用於高線性度及高功率電路應用上。

　In this thesis, the characteristics of the In0.425Al0.575As/InxGa1-xAs metamorphic high electron mobility transistors (MHEMT’s) with two different channel designs, grown by a molecular beam epitaxy (MBE) system have been studied. The studied devices exhibit high-frequency circuit applications, including the drain-source saturation current density (IDSS = 511 mA/mm), maximum extrinsic transconductance (gm,max =315 mS/mm), microwave performance (fT = 55.4 GHz, and fmax = 77.5 GHz), and low-noise characteristics (NFmin=0.88 dB at 2.4 GHz) have been achieved for the pseudomorphic channel MHEMT (PC-MHEMT). Therefore, PC-MHEMT is suitable for high-frequency and low-noise applications. On the other hand, due to higher conduction-band discontinuities (ΔEc) and good carrier confinement, the high-temperature device characteristics with good thermal stability is achieved for the deviations of IDSS and gm,max are 21.9﹪and 17.7﹪with increasing the temperature from 300 K to 500 K, respectively. In addition, the V-shaped symmetrically-graded channel MHEMT (SGC-MHEMT) due to the effective energy-gap is larger than that of PC-MHEMT, improved breakdown characteristics (BVGD =
-16.05 V, BVoff = 14.64 V, and BVon=10.9 V) and the deviations of BVGD is 26﹪ with increasing the temperature from 300 K to 500 K. Therefore, SGC-MHEMT is suitable for high-power and high-linearity circuit applications, including improved gate-voltage swing (GVS = 1.3 V), small-signal power gain (Gs =19.2 dB), and output power (Pout =14.9 dBm).

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