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研究生：	陳勝斌 Chen, Sheng-Bin
論文名稱：	2.4~2.5 GHz 功率放大器之研製 Design and Fabrication of 2.4~2.5 GHz Power Amplifier
指導教授：	吳昌崙 Wu, Chang-Luen 許渭州 Hsu, Wei-Chu
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2004
畢業學年度：	92
語文別：	英文
論文頁數：	86
中文關鍵詞：	負載拉移、功率放大器
外文關鍵詞：	Load Pull, Power Amplifier, Balance Amplifier, IMFET
相關次數：	點閱：87 下載：7
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　　本論文主要著眼於2.4~2.5 GHz 功率放大器之研製。在通訊系統的傳輸端中，功率放大器是相當重要的零組件。由於資料傳輸的速度要求越來越快，許多應用於藍芽無線傳輸的系統快速而廣泛的發展。在設計方法上，我們使用混成微波積體電路(Hybrid MIC)及微帶線(microstrip line)的架構，並將匹配電路製作於氧化鋁基板上。
　　功率放大器的設計，乃選用2.4mm 砷化鎵擬晶型高電子移動率場效電晶體為主動元件，並採用電晶體內部匹配的結構來匹配功率元件極低的輸入及輸出阻抗。我們分別使用Cripps 的負載線(Load-Line)理論與負載拉移(Load-Pull)的量測結果來選取最佳負載，並比較其量測結果。在2.4~2.5 GHz 的頻率範圍，使用負載線理論為基礎設計之功率放大器輸出功率為28.8dBm，相關的附加功率效率約為19%，功率增益大於18dB，輸入反射損失小於-12dB，輸出反射損失小於-18dB。使用負載線理論為基礎設計之功率放大器輸出功率為30.1dBm，相關的附加功率效率約為21%，功率增益大於17dB，輸入反射損失小於-20dB，輸出反射損失小於-18dB。

　　This thesis presents the design and implementation of 2.4~2.5 GHz power amplifier. In the communication system, power amplifiers are the key components at the transmitting end. Due to high data rate requirement, many Bluetooth wireless applications have been proposed and developed. Hybrid MIC (Microwave Integrated Circuit) and microstrip-line configuration are employed in this design. Matching networks are realized on the alumina substrates.
　　The power amplifier was developed using 2.4 mm GaAs pHEMT device. The design employed the internally matched achieve optimum power match. We utilized Cripps’s load-line theory and load-pull measurement result to predict optimum output impedance respectively, and compared their measurement results. The complete amplifier was mounted on a CuW carrier. By using load-line power model, it delivers 28.8dBm (0.8Watt) of output power, with 18dB power gain and 19% power-added efficiency. It’s input and output return-loss are lower than –12dB and –18dB, respectively. By using load-pull power model, it delivers 30.1dBm (1 Watt) of output power, with 17dB power gain and 20% power-added efficiency. Its input and output return-loss are lower than –20dB and –18dB, respectively. These power amplifiers are intended to be used in the transmitter for Bluetooth wireless communication systems.

Contents
Abstract (Chinese)
Abstract (English)
Table Captions
Figure Caption
Chapter 1  Introduction                                  1
1.1 Background                                           1
1.2 Motivation                                           2
1.3 Thesis organization                                  2
Chapter 2  Principles of Microwave Amplifier Design      3
2.1  Smith Chart                                         3
            2.2  Scattering Parameters                   6
            2.3  Microstrip Line                         10
            2.4  Gain                                    13
2.4.1 Transducer Power Gain                              13
2.4.2 Available Power Gain                            14
2.4.3 Operating Power Gain                            14
            2.5  Noise                                             15
            2.6  Distortion                                         17
2.7  Output Power and P1dB                              18
2.8  Efficiency                                         19
2.9  Balance Amplifier                                  20
2.10 DC Bias                                           21
Chapter 3  Design of 2.4~2.5 GHz Power Amplifier       32
3.1  Power Amplifier Classes                           32
3.1.1   Class A, AB, B, and C Power amplifiers           32
                3.1.2   Class D, E, and F Power amplifiers               34
            3.2   Power matching of power amplifier                    35
                 3.2.1   Load-Line                                  35
                 3.2.2   Load-Pull                                  38
            3.3   2.4~2.5 GHz Power Amplifier Design                  40
                 3.3.1   Overview                                  40
                 3.3.2   Circuit Description                           40
                 3.3.3   Device Selection                             40
                 3.3.4   Power Amplifier design based on Load-Line model  41
                 3.3.5   Power Amplifier design based on Load-Pull model  43
Chapter 4  2.4~2.5 GHz Power Amplifier measure result   67
            4.1   DC Analysis                                       67
            4.2   Gain and Return Loss Measurement                    67
            4.3   Noise Figure Measurement                           67
            4.4   Output Power measurement                           68
            4.5   Measurement of 2.4~2.5 GHz PA based on load-line theory  68
            4.6   Measurement of 2.4~2.5 GHz PA based on load-pull theory  69
            4.7   Compare with two amplifiers                         69
            4.8   Summary                                         69
Chapter 5  Conclusion                                      81
References                                         84                                            
Table Caption

Table 2.1   High Frequency FET bias circuits
Table 3-1   Advantage of pHEMTs used for power amplifier
Table 3-2   Electrical characteristics of Transcom’s 2.4mm pHEMT
Table 4-1   Comparison of the measurement results of two modules
Table 5-1   Comparison of the simulation specification and measurement results of two modules

                                    

References

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校內：2006-07-19公開
校外：2006-07-19公開

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