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研究生：	陳禹超 Chen, Yu-Chao
論文名稱：	應用GaN元件於高降壓高切換頻率直流-直流轉換器之研製 Implementation of high step-down high switching frequency DC-DC converter with GaN components
指導教授：	陳建富 Chen, Jiann-Fuh
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2021
畢業學年度：	109
語文別：	英文
論文頁數：	64
中文關鍵詞：	高降壓比、低輸出電壓、負載點轉換器
外文關鍵詞：	High step-down ratio, Low output voltage , Point-of-load converter
相關次數：	點閱：146 下載：0
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隨著科技的日新月異，物聯網將資料數位化並存入數據中心中。 Google提出含有負載點轉換器之架構。傳統架構必須透過兩級的轉換，將傳統輸入電源12伏特提升至 48伏特再轉至負載點電壓。隨著輸入電壓的提升，電流減少，導通損耗減小。而全新的架構僅需一級轉換達到 CPU和 DRAM 1.x系列的低輸出電壓。本論文採用耦合電感和能量傳輸電容來獲得高降壓比及回收漏感能量來達到效率的提升。於文中，討論轉換器動作原理和參數設計，並透過軟體SIMPLIS®模擬其可行性。
根據本文所提出的設計，研製一規格為 48伏特輸入電壓、1.2伏特輸出電壓、25安培額定電流及切換頻率為 500kHz之電路，對本文所提出之拓樸進行實現及驗證。實驗結果顯示輸出功率為6瓦特時最高效率為92.2%。

With the rapid development of technology, the internet of things will digitize and store in the data center. Google proposes an architecture with a point-of-load converter. The two-stage conversion are required for conventional converter chain. The conventional input power supply is increased from 12 V to 48 V to the point of load voltage. As the input voltage increases, the current decreases and the conduction loss decreases. The new architecture only requires one-stage conversion to reach the low output voltage of the CPU and DRAM 1.x series. In this thesis, coupled inductor and energy-transferring capacitor are used to obtain a high step-down ratio and recovered leakage inductance energy to achieve efficiency improvements. The operation principle and circuit parameters of the converter are discussed and developed. Simulated results are obtained by the software SIMPLIS®.
For verifying the feasibility of the converter in this thesis, a circuit with a specification of 48 V input voltage, 1.2 V output voltage, 25 A rated current and 500kHz switching frequency is implemented. Experimental results show that the maximum efficiency is 92.2% when the output power is 6W.

摘要 I
Abstract II
Acknowledgement III
Content IV
List of Tables VI
List of Figures VII
CHAPTER 1 INTRODUCTION 1
1 Background and Motivation 1
2 Thesis Outline 4
CHAPTER 2 REVIEW OF TOPOLOGIES AND COMPONENT INTRODUCTION .......................... 5
1 Isolated Converter 5
1.1 Flyback Converter 5
1.2 Forward Converter 7
1.4 Push-Pull Converter 8
2 Non-isolated Converter 9
2.1 Buck Converter 10
2.2 Conventional Interleaved Buck Converter 11
2.3 Tapped-Inductor (TI) Buck Converter 13
2.4 Summary 14
3 Introduction of Wide Bandgap Components 17
3.1 SiC Power MOSFET 17
3.2 GaN Depletion Mode HEMT 18
3.3 GaN Enhancement Mode HEMT 19
3.4 Summary 20
4 Gate Driver 21
CHAPTER 3 ANALYSIS OF HIGH STEP-DOWN CONVERTER 24
1 The high step-down Converter 24
2 Operating Principle 26
3 Steady State Analysis 33
3.1 Derivation of Voltage Conversion Ratio 34
3.2 Design Considerations of the Coupled Inductor 36
CHAPTER 4 PARAMETERS DESIGN AND SIMULATION 39
1 Parameters Design of Components 39
1.1 Duty cycle 39
1.2 The magnetizing Inductors Lm 40
1.3 The Energy-Transferring Capacitor CB 43
1.4 The Output Capacitor Co 44
1.5 The Switches S1, S2 and S3 44
2 Simulation Results 46
CHAPTER 5 EXPERIMENTAL RESULTS AND DISCUSSIONS 51
1 Experimental Waveforms 51
2 Efficiency 57
3 Power Losses 58
CHAPTER 6 CONCLUSIONS AND FUTURE WORKS 60
1 Conclusions 60
2 Future Works 61
REFERENCES 62
                                    

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2026-08-16公開

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