本實驗以電沉積方式，在含氯化物的水溶液中添加三乙醇胺(Triethanolamine，TEA)作為錯合劑，將二硒化銅鋁 (CuAlSe2，CAS)、以及銅銦鋁硒 (Cu(In,Al)Se2，CIAS)電沉積於ITO玻璃基板上。實驗變因包含:各個離子組成濃度、鍛燒溫度與時間、TEA濃度、電沉積電位、電沉積時間，其中鍍製二硒化銅鋁薄膜最佳條件為 5mM CuCl2 +30 mM AlCl3 + 22 mM SeO2 + 0.2 M TEA，在pH=2.50下鍛燒300 °C/1.0 hr。
不同沉積電位會影響實驗的電流密度、粒徑大小、膜厚、能隙。薄膜的晶格結構、組成比例、表面形貌，分別利用X光粉末繞射儀、能量分散式光譜儀、掃描式電子顯微鏡來進行分析。在X光粉末繞射儀分析上，薄膜特徵峰值強度會隨上述變因而有些微不同，而從能量分散式光譜儀發現薄膜中Se原子比例的偏低會導致利用公式計算出來的能隙有降低的趨勢。
薄膜的光學性質上，利用紫外光/可見光/近紅外光光譜儀來進行分析，利用測量穿透度、折射度然後經過公式計算出來的吸收係數也不相同。整體上薄膜吸收係數皆達到104 cm-1，表示薄膜具很強的吸收太陽光的特性是良好的吸收材料。

In our experiments, CAS and CIAS were deposited on ITO glass from chloride electrolytes by the method of co-electrodeposition. The parameters include: individual ion concentration, annealing temperature and annealing time, TEA concentration, deposition potential and deposition time. Among all conditions, the optimum condition was 5 mM CuCl2 + 30 mM AlCl3 + 22 mM SeO2 + 0.2 M TEA deposited at pH 2.50 and then under annealing at 300 °C for 1.0 hr.

Current density, particle size, thickness and band gap were found to be affected by the deposition potential. The crystal structure, compositions and morphologies of the deposited thin films were determined by X-ray powder diffractometer, energy dispersive spectrometer and scanning electron microscope, respectively. X-ray diffraction patterns revealed the peak intensities of the deposits were altered when the parameters mentioned above changed. From the analysis of EDS, the atomic ratios of Se in the films of deposits were discovered lower than the stoichiometric ratio. This phenomenon would narrow down the band gap, which can be calculated from formulas.

To investigate the optical properties, transmittance and reflectance of the films could be examined by UV-VIS-NIR-Spectrophotometer, and it would cause different absorption coefficients which were calculated from formulas. Overall, the absorption coefficient of the deposited films was as high as 104 cm-1, demonstrates that the films are potential absorbing materials because it possesses strong sunlight-absorbing characteristics.

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