本論文研究主題使用低能離子束輔助濺鍍奈米矽晶富矽氧化薄膜，以先濺鍍沉積再進行離子束輔助轟擊方式控制薄膜條件，藉由材料物性與光電特性分析，確認奈米矽晶的成長機制，實現富矽氧化薄膜發光與其現象探討，了解離子源所扮演的角色。
論文研究分為三部分：一為低能離子源在富矽氧化薄膜系統中的影響，二為低能離子源在富矽氧化物/二氧化矽薄膜系統中的影響，三為兩系統之光激發螢光現象探討。
研究結果顯示，經離子源輔助濺鍍之富矽氧化薄膜，因低能量離子源的轟擊產生發光缺陷，退火前即可產生室溫下肉眼可見的藍光(氧分壓3.2E-5 Torr與4.1E-5 Torr)及紅光(氧分壓8.8E-5 Torr)，此成果代表著室溫製程的實現。而在退火後可產生小而密的奈米矽晶分佈，顯示低能離子源可有效控制其尺寸密度，並使發光強度更為提升。
最後由光激發螢光光譜變化，推測藍光波段為與矽氧鍵結有關的輻射復合缺陷貢獻發光，紅光波段主要為奈米矽晶量子侷限效應導致發光。

This study took low-energy ion-beam assisted sputtering (IBAS) system to synthesize Si nanocrystals in silicon rich oxide (SRO) film. Films were deposited by sputtering first and ion beam bombardment was conducted later to control the film properties. By analyzing physical and optical properties of materials, growing mechanism of nanocrystals was confirmed, light emission from silicon oxide film was realized, and the role of ion source would be investigated.
There were three parts in research topic: First, effect of low energy ion source on SRO thin film system. Second, effect of low energy ion source on SRO/SiO2 thin film system. Third, photoluminescence of SRO and SRO/SiO2 thin film.
According to experimental results, SRO films with IBAS had strong blue and red light emission in the room temperature before annealing, due to the formation of emission defects by ion beam bombardment. This achievement indicated the realization of room temperature processing. After annealing, small and hight density Si nanocrystals were found. This evidence showed low energy ion source controlled nanocrystals size and density effectively, and enhanced light emission.
From photoluminescence spectra, the blue emission originated in radiative recombination defects which were related to Si-O bonds, and the red emission was attributed to quantum confinement effect from Si nanocrystals.

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