本文實驗主要使用鈦酸鍶為主材，利用其施體摻雜提高介電常數的特性及順電性、具低相轉換溫度對溫度穩定的特性，期望得到優於鈦酸鋇系統的陶瓷電容器的材料組成。
本實驗主要分成三大實驗，第一部份探討摻雜YM摻雜物及氧化錳(MnO2)含量對絕緣電阻的影響，並摻雜1.0 mol%(原子)的五氧化二釩期使燒結溫度降低於1350℃，第二部份探討摻雜氧化鈮(Nb2O5 )提昇介電常數，第三部份探討摻雜碳酸鋰(Li2CO3)、五氧化二釩(V2O5 )及氧化銅(CuO) 含量對絕緣電阻的影響。
實驗結果得知，沒有氧化鈮的摻雜下，YM摻雜物其含量在5 .0wt%可具較佳的絕緣電阻；錳的最佳含量為0.5 mol%(原子)，可得較高介電常數並可得一定水準的絕緣電阻約1.0E8Ω；2.0 mol%(原子)氧化鈮的摻雜可使介電常數提昇，但絕緣電阻則降低約一個級距；碳酸鋰的摻雜使試樣密度穩定於5.0 g/cm3，絕緣電阻隨其含量的增加有提昇的趨勢；五氧化二釩的含量的摻雜，對晶粒大小有顯著的影響，晶粒大小隨著含量的增加而變大，當其含量大於等於2.0 mol%(原子)時其介電常數維持在一定水準，約8000，而介電損失在其含量為2.0 mol%(原子)時為一最低的反曲點 — 1600E-4，絕緣電阻則在2.5 mol%(原子)時為一最高反曲點—9.53E7Ω；氧化銅的效應則是壓抑晶粒成長，對介電特性則有降低介電常數的效應、增大介電損失及降低絕緣電阻的趨勢。在我們的實驗也驗証了再氧化熱處理持溫1小時、溫度1000℃下有提昇絕緣電阻的效果，但介電常數則降低約27%。
當前較適當的組成為鈦酸鍶摻雜2.0 mol%(原子)的氧化鈮、0.5 mol%(原子)的二氧化錳、5.0 wt%的YM摻雜物、2.0 mol%(原子)的五氧化二釩及0.25 wt%的碳酸鋰，介電常數約8000，介電損失約1600E-4。絕緣電阻水準在1.0E7Ω，主因在於金屬玻璃沒有偏析於晶界中。

In our experiment, we select the strontium titanate, SrTiO3, as the main powder. And we make it with donor doped to gain the high dielectric constant, and it is equipped with the properties of paraelectric, stable temperature dependence of lower phase transition temperature . Purposed to gain the properties of the mixed composition are better than it of barium titanate, BaTiO3.
This experiment are mainly divided into three portions, the first portion is studied the effect of YM dopant and MnO2 on the insulated resistance and it is also doped the V2O5 , 1 mol% (at.) purposed to lower the sintering temperature under 1350℃. The second portion is studied the effect of the Nb2O5 on the dielectric constant. The third portion is studied the effect of Li2CO3, V2O5 and CuO on the insulated resistance.
From the experiment result, we get the suitable quantity of YM dopant, 5.0 wt% without Nb2O5 doped to get a higher insulated resistance. The suitable content of MnO2 is 0.5 mol%(at.) to get a better dielectric properties, insulated resistance,1.0E8Ω and dielectric constant, 1666E-4. The 2.0 mol%(at.) of Nb2O5 doped can gain the higher dielectric constant, but the insulated resistance will down a decade. The bulk density of it doped with Li2CO3, can be kept around 5.0 g/cm3 stably. And the insulated resistance increases , the dielectric loss decreases with its content increase. The V2O5 shows a clear effect to depress grain growth, the dielectric constant will be kept around 8000 when its content is not smaller than 2.0 mol%(at.), the dielectric loss is lowest value, 1600E-4 when its content is 2.0 mol%(at.) and the insulated resistance is highest value when its content is 2.5 mol%(at.). The CuO effect is to depress the grain growth, and it has the effect to reduce the dielectric constant, to enlarge the dielectric loss and to reduce the insulated resistance. We also verify the effect of the post-heat treatment re-oxidation. The insulated resistance can be raised one decade when its condition is that the temperature,1000℃, the soaking time—1 hour in air. And the dielectric constant will be down around 27%.
The suitable composition is that the SrTiO3 doped with 2.0 mol%(at.) of Nb2O5 , 0.5 mol%(at.) of MnO2, 5.0 wt% of YM dopant, 2.0mol%(at.) of V2O5 and 0.25 wt% of Li2CO3. The dielectric constant will be around 8000 and the dielectric loss will be around 1600E-4. The insulated resistance level around 1.0E7Ω is owing that the glass fluxes do not exist in the grain boundary.

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