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研究生: 葉冠宏
Yeh, Kuan-Hung
論文名稱: 半導體製程機台微塵改善建議以蝕刻製程為例
A study of particle improvement in semiconductor manufacturing tools with etching process
指導教授: 蔡明田
Tsai, Ming-Tien
學位類別: 碩士
Master
系所名稱: 工學院 - 工程管理碩士在職專班
Engineering Management Graduate Program(on-the-job class)
論文出版年: 2023
畢業學年度: 111
語文別: 中文
論文頁數: 33
中文關鍵詞: 氟氧化釔ECR電漿蝕刻微塵改善
外文關鍵詞: YOF, ECR plasma, Particle improvement
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  • 從Covid-19疫情開始全球歷經一場始料未及的「晶片荒」,然而台灣因為半導體意外的取得戰略地位,隨著科技發展不斷進步,人們對於電子產品功能需求提升,積體電路 (IC)線寬設計日趨微型化,由180 nm→…→20 nm→7 nm→3 nm。在半導體元件追求微小化的趨勢下,蝕刻製程 (Etching process)技術扮演著關鍵的角色。

    本研究針對蝕刻製程中的微塵改善,主要探討氧化釔 (Y2O3)/氟化釔 (YF3)/氟氧化釔 (YOF)三種釔塗層在ECR電漿蝕刻中使用複合氣體 : 氯氣(Cl2)/氟氣(F)/氧氣(O2)的情況下微塵的表現是否可以達成要求的規格,研究中利用各種檢測方法去分析各種釔塗層的優缺點,也更了解不同的屬性。

    最後的測試結果是由氟氧化釔 (YOF)的馬拉松微塵測試取得了良好的結果,也為本研究帶來了新材料的應用,未來也留給之後的研究者參考的依據。
    關鍵詞:氟氧化釔、ECR電漿蝕刻、微塵改善

    The world has experienced an unexpected "chip shortage" since the Covid-19 issue in 2020. In the case of a chip war, Taiwan has unexpectedly gained a strategic position due to great demand of semiconductors around the world. As technology and novel application in using, the progress of chip design are more meticulous not only in its scale, but advance in functions. That makes chip becoming "smaller" and increasingly miniaturized from 180 nm, 110 nm, …20 nm to 7 nm, even to 3 nm or less by Moore's Law.

    In the competition of chip war, the technology of etching process plays a key role in the pursuit of miniaturization of semiconductor components. Therefore, we focus on the improvement of particle in the etching process.

    In order to revealing the correlation between yttrium oxide (Y2O3), yttrium fluoride (YF3), and yttrium fluoride oxide (YOF) coatings under process condition and chlorine (Cl2), fluorine (F), and oxygen (O2) in ECR plasma etching. The performance of particle for three types of coating materials is investigated to meet the required specifications. Various testing methods were used to analyze the strengths and weaknesses of these components, and to evaluate their properties in different aspects.

    Results reveal that the YOF coating is more effective on reduction of particles in comparing the test pieces and the actual marathon test analysis. Therefore, we have found that YOF as ideal coating materials for etching parts, but also contributed in particle reduction practice through this study.
    Keywords: YOF, Particle Improvement, ECR plasma.

    目錄 摘要 I EXTENDED ABSTRACT II 誌謝 VI 目錄 VII 表目錄 IX 圖目錄 X 第一章 緒論 1 1.1 研究問題/主題背景 2 1.2 研究目的與現況說明 2 1.3 研究流程架構 3 第二章 文獻回顧與理論探討 4 2.1 半導體製程簡介 4 2.2 ECR電漿蝕刻機制 6 2.3 蝕刻生成物與微塵產生簡介 8 2.4 氧化釔塗層簡介及文獻探討 10 第三章 實驗與研究方法 14 3.1 現況解說及定義 14 3.2 重要儀器與設備 16 3.3 實驗規劃講解 18 3.4 實驗測試流程 19 第四章 研究分析結果 22 4.1 釔塗層測試片研究分析 22 4.2 電漿蝕刻對測試片的影響分析 24 4.3 電漿蝕刻實機微塵改善分析 27 4.3.1 馬拉松測試微塵分析 27 4.3.2 釔微塵成分分析 28 第五章 結論與建議 30 5.1 總結 30 5.2 未來展望 32 參考文獻 33

    參考文獻
    [1] Plasma-resistance evaluation of yttrium oxyfluoride coating prepared by aerosol deposition method. (https://ceramics.onlinelibrary.wiley.com/doi/epdf/10.1111/ijac.13880)。
    [2] 黃光微影 (Photolithography) (https://www.ansforce.com/post/S1-p427)
    [3] 積體電路製造 集成电路制造 掺杂技术 (Doping) (https://www.bilibili.com/read/cv7137228)
    [4] 什麼是蝕刻 (Etching)? (http://improvementplan.blogspot.com/2010/06/etching.html)
    [5] 蝕刻技術 (Etching) (file:///C:/Users/user/Downloads/S1-p432.html)
    [6] 薄膜成長 (Thin film growth) (https://www.ansforce.com/post/S1-p433)

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