介電陶瓷基板因其機械應力強、頻率應用範圍廣、承受功率大等優點，廣泛應用於許多通訊設備中，隨著通訊技術的發展，對作爲通訊設備關鍵材料的介質陶瓷性能參數有更高的要求，即特低的介電損失(Q×f 值>100,000GHz)、低介電常數(5< εr<15)及趨近於零的共振頻率溫度飄移係數(τf)。根據許多研究結果顯示，為了調整τf值會使Q×f 值下降，但並未探討τf值對訊號飄移影響的多寡，故本研究將會對τ_f值和基板濾波器之關係進行理論模擬計算，探討τf值對訊號飄移的影響，首先，根據理論公式計算εr與溫度關係，再將已知參數 εr、tanδ 輸入至模擬軟體進行濾波器特性模擬，根據研究結果得知需進行τ_f調整之臨界值為-266 ppm/℃，常見陶瓷材料之τf值皆高於此臨界值，故避免在調整過程當中所造成的Q×f 值降低，認為τf值沒有調整的必要性。為了符合低介電常數、高Q值的需求，開始尋找有潛力之材料，最後選擇Zn2SiO4，因其燒結溫度相較其他潛力材料較低，而本研究選用Zn2SiO4並加以改良使其有更高Q×f 值之表現，以降低作為濾波器時的能量損耗。分別採用CoO、CuO 微量取代 ZnO製作Zn_1.95 Co_0.05 SiO_4、〖 Zn〗_(2-x) Cu_x SiO_(4 )材料，Zn_1.95 Co_0.05 SiO_4、〖 Zn〗_(2-x) Cu_x SiO_(4 )皆使用固相燒結法製作，經由實驗結果發現〖 Zn〗_1.95 Co_0.05 SiO_4(ZCS)在燒結溫度為1375℃ 持溫6小時有最佳微波介電特性，ZCS的Q×f 值為140,400 GHz、〖 ε〗_r為6.865、τ_f 值為-19 ppm/℃，並與文獻使用反應燒結法製作的ZCS比較微波介電特性與製作成本，發現Q×f 值低約85,000 GHz，可能原因為燒結方式、粉末原料、實驗環境不同所導致，但仍符合本研究設定之目標Q×f 值大於100,000GHz。在符合研究設定之目標Q×f 值下，經由EDS分析確認CuO不僅可以降低燒結溫度，其Cu^(2+)還可以取代Zn2SiO4中的Zn^(2+)。本研究製作成本較文獻低約2.5倍，而〖 Zn〗_(2-x) Cu_x SiO_(4 )(ZCuS)在比例 x=0.08、且燒結溫度1150℃ 持溫4小時有最佳微波介電特性，ZCuS的Q×f 值為100,400 GHz、εr為6.79、τf 值為-28 ppm/℃，同樣符合本研究設定之目標Q×f 值，ZCuS與本研究製作之ZCS比較，具有最佳燒結溫度低225℃、燒結持溫時間少2小時、製作成本低約5.68倍等優點。最後以Al2O3、ZCS、ZCuS設計及製作中心頻率為3.5 GHz之基板帶通濾波器，經由量測結果發現在符合本研究設定之目標插入損耗小於3dB下，考量製作時間及價錢成本選擇ZCuS為當中製作濾波器最佳的微波介電陶瓷基板材料。

To meet the requirements of low dielectric constant and high Q value, the search for potential materials was initiated, and Zn2SiO4 was ultimately chosen. It has a lower sintering temperature compared to other potential materials. In this study, Zn2SiO4 was selected and modified to achieve higher Q×f performance. Zn1.95 Co0.05SiO4 and Zn(2-x)CuxSiO4 materials were prepared by substituting a small amount of ZnO with CoO and CuO, respectively. Both Zn1.95Co0.05SiO4 and Zn(2-xCuxSiO4 were fabricated using the solid-state sintering. Experimental results showed that Zn1.95Co0.05SiO4 (ZCS) exhibited the best microwave dielectric properties when sintered at a temperature of 1375°C for 6 hours. ZCS had a Q×f = 140,400 GHz and εr = 6.865 and τf = -19 ppm/°C. A comparison was made between ZCS produced in this study and ZCS produced using reaction-sintering process in the literature in terms of microwave dielectric properties and cost. It was found that the Q×f value was lower by 85,000 GHz, possibly due to different sintering methods, powder materials, and experimental environments. However, it still met this study’s target Q×f value, and the cost was approximately 2.5 times lower than the literature. For Zn2-xCuxSiO4 (ZCuS) with a ratio of x = 0.08 and a sintering temperature of 1150°C with a 4-hour holding time, it exhibited best microwave dielectric properties. ZCuS had a Q×f = 100,400 GHz, εr = 6.79, and τf = -28 ppm/°C, also meeting the target Q×f value of this study. Compared to ZCS produced in this study, ZCuS had advantages such as a lower best sintering temperature by 225°C and cost approximately 5.68 times lower. Finally, a ZCS and ZCuS substrate bandpass filter with a center frequency of 3.5 GHz was designed and fabricated. Both filters exhibit a center frequency of 3.5GHz, reflection loss >10dB, insertion loss < 3dB, and a bandwidth ratio > 3.5%, all of which meet the application requirements for 3.5GHz filters.

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