在本論文中，主要是在Si(111)的基板上使用氮化鉻(CrN)奈米島(nanoisland)做緩衝層(buffer layer)來成長最近相當熱門的III-V 族寬能隙半導體材料氮化鎵(GaN)磊晶層並對其磊晶層的特性做深入的探討。
實驗的部份，我們以射頻濺鍍系統(RF Sputtering system) 在Si(111)基板上成長鉻金屬層，然後在分子束磊晶系統(Molecular Beam Epitaxy System)中氮化以得到氮化鉻奈米島作為緩衝層來成長氮化鎵磊晶層作為研究主軸。
論文主要分為二個部份：第一部份為使用氮化鉻薄膜做為緩衝層在不同的磊晶參數下成長氮化鎵磊晶層的研究。第二部份則為討論氮化鎵磊晶層在使用氮化鉻奈米島作為緩衝層的情況下成長而得的結晶性及光電特性的影響為何。

In this study, the GaN epitaxial layer was fabricated by CrN nanoislands buffer layer on Si(111), and make the in-depth exploration for the GaN layer.
The RF Sputtering system was used to form the Cr metal layer, and the the nitridation process was performed in the molecular chamber before the GaN epilayer growth.
The thesis is divided into two parts as GaN epilayer growth with various epitaxial recipe by the use of CrN buffer layer for the first part,
and the research of crystalline and optoelectronic characteristic for the GaN epitaxial layer by the use of GrN nanoislands buffer layer for the second part.

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