本論文使用五環素摻雜鈉鹽，以真空蒸鍍的方式於可撓式塑膠基板上成長N型有機薄膜電晶體和場效電晶體。吾人先在P型和N型矽基板上，成長有機薄膜製備PN接面二極體並量測電流-電壓特性，來判定五環素摻雜鈉元素有機薄膜的正負性。其次，利用EDX分析證實鈉原子摻雜的有效性、FTIR研究各原子間的鍵結，和ESCA檢視有機薄膜的成份分布。再依據所得到的最佳參數，在PC(Polycarbonate)基板上研製有機薄膜電晶體和場效電晶體。
本研究同時討論使用SiO2、SnO2和ZnO 三種材料當PC基板的緩衝層，成長AZO和ITO兩種高可見光穿透能力材料做閘極電極的可行性。吾人調整不同的製程參數並利用HALL量測片電阻值和電阻率、UV光譜儀分析透光度、SEM檢查薄膜的表面型態、XRD研究結晶方向和強度、AFM檢視薄膜表面的粗糙度，以得到最佳結晶品質和電性的AZO和ITO 薄膜。本論文發現以SnO2當緩衝層的ITO分子，能夠在PC基板上表現出較佳的電性品質，不需要高溫處理便有10的-3次方左右的電阻率。
本研究所製備的N型有機薄膜電晶體的特性是場效移動率6.39x10-2cm2/Vs，臨限電壓1.72V、驅動電流6.18μA，開關電流比在103左右。相較於已發表使用F16CuPc的N型有機薄膜電晶體，其場效移動率在2x10-2cm2/Vs左右，本研究所製備的N型有機薄膜電晶體有較高的場效移動率6.39x10-2cm2/Vs，而臨限電壓是1.72V、驅動電流是6.18μA，開關電流比在10的3次方左右；相較於使用單一五環素的N型有機場效電晶體，其場效移動率在1.2x10-2cm2/Vs左右，本研究所製備的N型有機場效電晶體有較高的場效移動率0.74cm2/Vs，而臨限電壓是10.45V、驅動電流是42.4μA，開關電流比在10的3次方左右。

In this thesis, we used sodium dopant to prepare the N-type Pentacene organic thin film transistor (OTFT) and organic field effect transistor (OFET) on flexible plastic substrate by a thermal evaporation system. We used EDX and ESCA to detect the dopant Na and the Na atomic concentration in the films, while the FTIR was applied to analyze bond structure.
In addition, we deposited high transmittance AZO and ITO films as the gate electrode on different buffer layers including SiO2, SnO2 and ZnO. These AZO and ITO films were characterized by Hall measurement system to measure the sheet resistance and resistivity, Ultraviolet/Visible Spectrometer for transmittance measuring, SEM/AFM to examine morphology, and XRD for analyzing crystal structure. Based on the characterization, the deposition parameters of these gate electrode films were optimized, and used to prepare the OTFT and OFET on PC (Polycarbonate) substrate.
Experiment results showed the developed OTFT device has the drift mobility of 6.39x10-2cm2/Vs, threshold voltage of 1.72V, driving current of 6.18uA, and on-off current ratio of 103. The drift mobility of 6.39x10-2cm2/Vs is better than that of reported 2x10-2cm2/Vs for the N-type OTFT device using F16CuPc. The developed OFET has a drift mobility of 0.74cm2/Vs and threshold voltage of 10.45V, which are better or comparable to that prepared by pure Pentacene with a drift mobility of 1.2x10-2cm2/Vs。

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