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| 研究生： |
謝文元 Hsieh, Wen-yuan |
|---|---|
| 論文名稱： |
熱碳還原法生長WO3奈米線及Ge-Si1-xGexOy核殼奈米線 Growth of WO3 nanowires and Ge-Si1-xGexOy core-shell nanowires via carbothermal reduction |
| 指導教授： |
林文台
Lin, Wen-tai |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年： | 2007 |
| 畢業學年度： | 95 |
| 語文別： | 中文 |
| 論文頁數： | 71 |
| 中文關鍵詞： | 奈米線 、鍺 、氧化鎢 、熱碳還原法 |
| 外文關鍵詞： | WO3, Ge, carbothermal reduction, nanowires |
| 相關次數： | 點閱：51 下載：1 |
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本研究探討以熱碳還原法在溫度900°C-1100°C及Ar流量25-400sccm下，GeO2加入WO3粉末生長WO3 nanowires(以下簡稱NWs)及Ge-Si1-xGexOy核-殼奈米線(以下以Ge-SiGeO NWs稱之)的效應。在900°C時，由熱蒸鍍或熱碳還原WO3粉末並無觀察到有奈米線生成，加入了GeO2才使得WO3 NWs 生長。 WO3奈米線生長依觀察是以氣-固機制(V-S process)成長，GeO2於其中扮演了氧化劑的角色。在此研究不同溫度下，熱碳還原法在WO3/GeO?2/C的混合粉末下生長不同種類奈米線的機制。在900°C，Ar氣氛通入1-5%氧氣的環境下會使GeO2 NWs 及WO3-GeO2 core-shell NWs 生長。而愈多的氧氣通入會抑制奈米線的成長，因為會有許多碳粉被消耗掉。 而在1050°C-1100°C下，也觀察到Ge-SiGeO NWs遵循V-S機制生長。另外，將會個別討論WO3、GeO2與Ge-SiGeO NWs的生長機制。
Effects of adding GeO2 to WO3 powders on enhancing the growth of WO3 nanowires (NWs) and Ge-Si1-xGexOy core-shell NWs ( Ge-SiGeO NWs) via the carbothermal reduction process in Ar at a flow rate of 25-400 sccm at a temperature of 900-1100°C were studied. Upon the thermal evaporation or carbothermal reduction of WO3 powders at 900°C no NWs were grown. The growth of WO3 NWs follows the vapor-solid (VS) process, where GeO2 powders act as an oxidizer. Introducing 1-5% O2 into flowing Ar enhanced the growth of GeO2 NWs and WO3-GeO2 core-shell NWs at 900°C. More O2 suppressed the growth of NWs because of the exhaustion of much graphite powders. At 1050-1100°C the growth of Ge-SiGeO NWs following the VS process were observed. In addition, the growth mechanisms of WO3, GeO2, and Ge-SiGeO NWs are discussed, respectively.
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