此篇論文中主要介紹兩大部分，第一部份將介紹低損耗剛玉結構A4B2O9的介電陶瓷材料，且探討不同參雜方法對其材料特性之應用與改善；第二部份著重於四種參雜材料在最緻密情形下最大品質因數的預測，以及在不同參雜量離子和不同溫度下損耗正切與孔隙的趨勢，用以探討剛玉結構材料作為微波元件用途時，儲存訊號能量能力的上限。

There are two main subjects in this thesis. First, we will discuss the low loss corundum-sructured A4B2O9 dielectric ceramic material, and make a thorough inquiry to the influence of different kinds of doped ions in order to improve its microwave dielectric properties and applications. Second, there will be an emphasis on the prediction of the maximum quality factor of four kinds of doped materials in the fully-densed condition, and the relation between the loss tangent and porosity in different doped ions and temperature.

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