在本論文中，我們利用有機金屬氣相磊晶(MOVPE)與分子束磊晶(MBE)法成長氮化物半導體，並利用氮化物半導體研製異質接面場效電晶體、光偵測器與藍光發光二極體。在有機金屬氣相磊晶成長方面，低溫成長的氮化鎵緩衝層表面型態影響隨後成長在其上的氮化物半導體薄膜的成長速率及品質，我們藉由即時反射率監控的分析，成長出低背景濃度(1.61016 cm-3)的氮化鎵薄膜，其電子遷移率為463 cm2/Vs，我們也利用此成長技術成功在其上成長高品質摻雜的n型、p型氮化鎵薄膜與三元氮化物半導體。薄膜材料中的缺陷(defect)也進一步被探討，而兩段式橫向磊晶成長法(ELOG)可用來有效降低氮化鎵薄膜的缺陷密度。
關於研製氮化物元件部分，我們首先利用氮化鋁鎵與氮化鎵異質接面形成的二維電子雲(2DEG)與壓電效應(pizoelectric)製作場效電晶體。利用有機金屬法成長的電晶體，摻鎂(Mg)高阻抗絕緣層提供良好的電晶體關閉特性。我們也利用分子束磊晶法進一步成長製作出高品質的場效電晶體，研究中發現結合兩種成長技術優點，在有機金屬磊晶法成長的氮化鎵基板上利用分子束磊晶法成長出高品質的二維電子雲，其成長出的試片在1.2K時的電子遷移率高達14300 cm2/Vs。在光元件應用的部分，我們利用二維電子雲有高電子移動速度與高電子密度的特性，製作出在270nm波長照光下光響應率高達8.6106 A/W。利用同時雙摻雜技術與穿透層的應用，新穎的p-down InGaN/GaN量子井結構藍光二極體也被成功研製。

In this dissertation, the growth and characterization of GaN epilayers have been systematically studied using in-situ reflectance and ex-situ measurements. We have also successfully fabricated the AlxGa1-xN/GaN 2DEG HFETs, photodetectors, n-down and p-down InxGa1-xN/GaN MQWs LEDs. In epitaxial layers growth, the morphology evolution of the initial low-temperature buffer layer strongly influences the structural and electrical quality of the high-temperature GaN epilayers. Moreover, by changing the nucleation temperatures, one can change the rate of the lateral growth and coalescence of a high temperature GaN layer. Through the optimization of the incubation period from 3D to 2D growth, good control of high quality undoped GaN epilayer with Hall mobility of 463 cm2/Vs and carrier concentration 1.61016 cm-3, respectively, can be obtained. The sequent growth of doped GaN and ternary III-nitride also can be controlled very well using same technique. In addition, the presence of donor-like defect-related states exist in the range of 1.48 to 2.33eV below the conduction band edge for the as deposited GaN films. For the epitaxially lateral overgrowth (ELOG), the effects of low temperature 3D-GaN buffer layer on the ELOG grown by MOVPE were studied.
Photo-ehanced chemical wet etching rate on GaN films of different structural and electrical property was investigated in KOH and H3PO4 with various etch solution molarity. We also compared the dry etching and wet etching process and found that dry etching has ion-induced damages which deteriorate the electrical properties of devices. Moreover, the AlGaN/GaN 2DEG HFET was processed by PEC wet etching and the dc characteristics of saturated currents of 850 mA/mm and transconductances of 170 mS/mm for devices with a 0.5 m gate length were obtained.
For AlxGa1-xN/GaN 2DEG heterostructure field effect transistor (HFET), a high quality AlGaN/GaN 2DEG heterostructure on a semi-insulating layer by using bis-cyclopentadienyly magnesium (Cp2Mg) doping process grown by MOVPE have successfully fabricated. The HFET devices show good cut-off characteristics of drain-current of 10-3 mA/mm at VD=10V and VG=5V. Gate leakage current of 10-4 mA/mm is also obtained. The ohmic contact on the high bandgap AlGaN and sheet carrier densities in 2DEG affected the dc and rf electrical properties in HFETs. Moreover, the ammonia-MBE growth technique has been studied. High quality AlGaN/GaN 2DEG epilayers and devices were successfully fabricated on sapphire and SiC substrates and we have also significantly improved surface smoothness, and consequently improved electrical characteristics on MOVPE template substrates by ammonia-MBE. In addition, photodetectors with 2DEG heterostructure have huge optical gain of 8.7106 A/W with an incident light wavelength of 270 nm. This can be explained using the conduction band diagram of 2DEG system and persistent photoconductivity (PPC) effect. For InxGa1-xN/GaN MQWs LEDs, a novel p-down blue LEDs were fabricated and compared with conventional n-down LEDs in this dissertation. The turn on voltage could be significantly reduced to less than 5V for the p-down LED with co-doped layer and tunnel layer. The output power was 1mW when the injection current was 20mA for the p-down LED with an Mg+Si co-doped interlayer and a rough p-tunnel layer.

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