本研究主要以ITO電極表面改質以及熱蒸鍍法製備MoO3/Al/MoO3 電極技術之建立，並應用於有機發光二極體元件，及進行其元件分析。
論文主要分為兩大部分，第一部份為利用CsF溶液對ITO電極表面改質並探討對於元件特性影響及相關機制。第二部份為以熱蒸鍍法製備MoO3/Al/MoO3 陽極電極於不同機板(玻璃基板與塑膠基板(PES))並且應用於有機發光二極體元件。
由實驗結果發現：第一部分以結構為ITO / NPB (40nm) / Alq3 (60nm) / LiF (1nm) / Al (150nm)的有機發光二極體元件，使用CsF溶液對ITO電極表面改質，此方法增加ITO功函數達到5.1eV及表面能,且降低了表面粗糙度，提升元件效率。其中發現CsF溶液在10%濃度對ITO基板改質運用元件可提升最好的效率至2.94 cd/A及輝度可達到20300 cd/m2
第二部份製備MoO3/Al/MoO3 陽極電極具有微共振腔效應；並成功運用於塑膠基板(PES)製備元件，且進行彎曲討論，陽極部分的最佳厚度為Glass / MoO3(30nm) / Al (15nm) / MoO3 (5nm)，其元件結構為substrate/MoO3/Al/MoO3 / NPB (40nm) / Alq3 (60nm) / LiF (1nm) / Al (150nm)的有機發光二極體元件。當中此研究又對MoO3/Al/MoO3及Al/MoO3陽極電極討論，其中金屬鋁與有機層界面存在一個能障差，MoO3視為緩衝層(電洞注入層)可降低電洞注入至有機層且能修飾金屬鋁的表面形貌，再將其電極運用於元件表現發現沉積在玻璃基板比塑膠基板上較，由於陽極MoO3/Al/MoO3 沉積玻璃基板有好的附著力與塑膠基板相比，最後運用於元件其效率可達到3.14 cd/A且輝度可達到21800 cd/m2。

In this thesis, we focused on how to fabricate a ITO-free organic light-emitting diodes MoO3/Al/MoO3 as semitransparent anode by thermal deposition, and the investigation the performance of organic light-emitting devices with ITO substrate was modified by caesium fluoride solution and follow by UV-ozone treatment.
In the first part of this search, fabricate a ITO-free organic light-emitting diodes MoO3/Al/MoO3 as semitransparent anode by thermal deposition. At the second part, the investigation the performance of organic light-emitting devices with ITO substrate was modified by caesium fluoride solution and follow by UV-ozone. Furthermore, the admittance spectroscopy proved useful in interface modification because of anode buffer layer. In the last part, we discussed the applications of OLED device.
In this study, the ITO substrates was modified by CsF solution, the work function and the surface roughness decreases with small concentrations of CsF solution. As the result, the device with ITO modified have a better performance (ITO / NPB (40nm) / Alq3 (60nm) / LiF (1nm) / Al (150nm)), the driving voltage of the device was 3V, the luminance can be reached to 20300 cd/m2 and the efficiency was 2.94 cd/A. In addition, ITO-free organic light-emitting diodes MoO3/Al/MoO3 as semitransparent anode fabricated by thermal deposition, the EL spectrum of the device has been demonstrated because of micro-cavity effect. The configurations of the proposed devices were glass / MoO3(30nm) / Al (15nm) / MoO3 (5nm) / (NPB) (40 nm)/ Alq3 (60 nm)/ LiF (1 nm)/ Al (150 nm), had a better performance, the luminance can be reached to 21800 cd/m2 and the efficiency was 3.14 cd/A

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