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研究生： 吳岳勳
Wu, Yue-Xun
論文名稱： 以四甲基氫氧化銨表面處理及二次熱退火製程研製高崩潰電壓之增強型金氧半高電子遷移率電晶體
Development of High Breakdown Voltage Enhancement-Mode GaN MOS-HEMTs Using TMAH Surface Treatment and Secondary Annealing Process
指導教授： 王永和
Wang, Yeong-Her
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2024
畢業學年度： 112
語文別： 英文
論文頁數： 112
中文關鍵詞： 氮化鋁鎵/氮化鎵 、金氧半高電子遷移率電晶體 、高崩潰電壓 、功率元件 、掘入式閘極 、二次退火 、沉積後熱退火 、表面處理
外文關鍵詞： AlGaN/GaN, HEMT, High Breakdown Voltage, Power Electronic, Gate Recess, Secondary Annealing, PDA, Surface Treatment
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    • 功率半導體元件是有效利用電力能源所不可缺少的關鍵元件，尤其高耐壓特徵是備受矚目，可應用於各式電器的電源、電動車的逆變器…等。而大家熟知的寬能隙半導體―氮化鎵，便成為了功率元件的指標性材料。
    本論文透過氮化鋁鎵/氮化鎵異質結構研製功率元件。事實上，傳統氮化鋁鎵/氮化鎵高電子遷移率電晶體為常開模式，使得元件在零偏壓的情形下，仍會有額外的能量逸散。因此本研究透過閘極蝕刻技術，去除部分氮化鋁鎵，減少極化效應以空乏二維電子雲，使元件轉為常關型操作。
    然而電漿蝕刻會對氮化鋁鎵表面造成損傷，因此在本論文中，我們在蝕刻後浸泡四甲基氫氧化銨溶液並進行熱退火修復。此外，我們也進行了第二次退火―閘極氧化層沉積後熱退火，進一步提升氧化層品質。
    在本篇論文中，我們以閘極蝕刻技術製作增強型高電子遷移率電晶體，其臨界電壓達0.77V、次臨界擺幅89.9 mV/dec、電流開關比1.59×109，閘極漏電流可抑制至2×108 mA/mm且崩潰電壓高達752V。

    Power electronics are crucial for efficient energy utilization, particularly in high-voltage applications like power supplies and inverters in electric vehicles. Gallium nitride (GaN), a wide bandgap semiconductor, is a key material in this field. This thesis explores power devices using AlGaN/GaN heterostructures. Conventional AlGaN/GaN high electron mobility transistors (HEMTs) operate in depletion mode, causing energy dissipation at zero bias.
    This study implements gate etching to partially remove AlGaN, reducing polarization effects and converting the device to normally off mode. Post-etching, samples are treated with TMAH and subjected to thermal annealing to repair etching damage. Additional annealing post-gate oxide deposition further improves oxide quality.
    The enhanced-mode HEMTs produced show a threshold voltage (Vth) of 0.77V, a subthreshold swing (S.S.) of 89.9 mV/dec, an on-off current ratio of 1.59×109, gate leakage current suppression to 2×10-8 mA/mm, and a breakdown voltage of 752V.

    中文摘要 I Abstract III Acknowledgments V Table of Contents XI List of Figures XVI List of Tables XXI CHAPTER 1 Introduction 1 1.1 Background 1 1.2 Motivation 5 1.3 Organization 9 CHAPTER 2 Basic Theory & Principle 10 2.1 AlGaN/GaN Heterostructure 10 2.1.1 Material Structure 10 2.1.2 Polarization effect 13 2.1.3 Two-dimensional electron gas (2DEG) formation. ...21 2.2 Surface Treatment 25 2.3 Post-Deposition Annealing (PDA) 28 2.4 Short-Circuit Capability 31 CHAPTER 3 Experiments & Fabrication 34 3.1 Experimental Equipment 34 3.1.1 Spin Coater 34 3.1.2 Oven 35 3.1.3 Mask Aligner 36 3.1.4 ICP-RIE 37 3.1.5 E-Beam Evaporator 38 3.1.6 Rapid Thermal Annealing 39 3.1.7 Atomic Layer Deposition System 40 3.1.8 Atomic Force Microscope 41 3.1.9 Focused Ion Beam 42 3.1.10 Transmission Electron Microscope 43 3.1.11 Semiconductor Analyzer 44 3.2 Device Fabrication Process 45 3.2.1 Sample Cleaning 45 3.2.2 Mesa isolation 46 3.2.3 Source and Drain Ohmic Contact 47 3.2.4 Gate Recess Process & Surface Treatment 49 3.2.5 Deposit Al2O3 by ALD System & PDA Process 50 3.2.6 Schottky Gate Metal Deposition 50 3.3 Schematic Procedures 52 CHAPTER 4 Results and Discussion 56 4.1 The properties of Al2O3 gate dielectric 56 4.1.1 Transmission Electron Microscopy (TEM) 56 4.1.2 Energy-Dispersive X-ray Spectroscopy Analysis 57 4.2 Surface Roughness of Gate Recess Region 59 4.3 D-mode MOS-HEMT Performance 60 4.3.1 Saturation Drain Current 60 4.3.2 Transfer Characteristics 61 4.3.3 Subthreshold Swing and On-off Ratio 63 4.3.4 Gate Leakage Current 65 4.3.5 Off-state Breakdown Characteristics 66 4.4 E-mode MOS-HEMT Performance 68 4.4.1 Saturation Drain Current 68 4.4.2 Transfer Characteristics 71 4.4.3 Subthreshold Swing and On-off Ratio 74 4.4.4 Gate Leakage Current 76 4.4.5 Off-state Breakdown Characteristics 78 4.4.6 C-V measurement 80 CHAPTER 5 Conclusion 83 CHAPTER 6 Future Work 85 References 86

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