微波介電共振器由具有高介電常數、高品質因素及良好的溫度穩定係數等特性，適合應用於天線、濾波器、震盪器和雙工器。近年來，由於微波通訊系統的快速發展，微型化和高效能已經成為微波元件的兩大主要需求。因此，高品質因素的介電材料常被使用在通訊系統中，並使用設計於高效能微波元件上。同時，將介電材料積體化亦是實現微波元件微型化的方法之一。此外，對於高頻通訊元件而言，降低燒結溫度也成為發展微波介電材料之重要趨勢。針對以上所述，本論文將以五個部分加以探討及研究：

一、高品質因數微波介電材料之開發
[a]鈦酸鎂陶瓷之研究:
(1)鈦酸鎂(Mg2TiO4)介電陶瓷擁有 ~ 14，Q×f ~ 150,000 GHz，τf ~ –50 ppm/°C的微波介電特性，其具有高品質因數及低成本的特色；因此，在微波通訊系統的應用上(例如：全球衛星定位系統，無線射頻辨識系統，無線區域網路等等)，鈦酸鎂介電陶瓷是非常受到歡迎的介電材料。在本論文中，嘗試著開發具有更高Q值的尖晶石系統，分別利用Co部分取代Mg原子及Sn部分取代Ti原子，可得到具有更佳微波介電特性的(Mg0.95Co0.05)2TiO4 (Q×f ~ 286,000 GHz)及Mg2(Ti0.95Sn0.05)O4 (Q×f ~ 318,000 GHz)。
(2)(Mg0.95Co0.05)2TiO4及Mg2(Ti0.95Sn0.05)O4雖有極佳的Q×f值，但其共振頻率溫度飄移係數仍為負值，無法有效的運用於微波元件上；因此，予以加入具有正溫度飄移係數的陶瓷材料(例如：CaTiO3，Ca0.61Nd0.26TiO3，Ca0.6La0.8/3TiO3，Ca0.8Sm0.4/3TiO3，Ca0.8Sr0.2TiO3)，以獲得具有高溫度穩定性的微波陶瓷材料。
(3)此外，採固態燒結法製備的(Mg0.95Co0.05)2TiO4–Ca0.8Sr0.2TiO3具有極佳的微波介電特性( ~ 19.22，Q×f ~ 123,200 GHz，τf ~ 2.8 ppm/°C)；但其燒結溫度高達1300°C，侷限其在工業上的應用價值，為了有效降低燒結溫度，嘗試在(Mg0.95Co0.05)2TiO4–Ca0.8Sr0.2TiO3陶瓷材料中加入燒結促進劑(B2O3)以達到液相燒結的目的。針對上述研究，並使用XRD及SEM來加以鑑定及分析。

[b]鈮酸鋅及鉭酸鋅陶瓷之研究:
(1)鈮酸鋅(ZnNb2O6)介電陶瓷擁有 ~ 23.3，Q×f ~ 83,600 GHz，τf ~ –75.2 ppm/°C的微波介電特性，其具有高品質因數及低燒結溫度的特色；因此，被廣泛應用於微波通訊系統中。在本論文中，嘗試著開發具有更高Q值的鈳鐵礦系統，利用Ta部分取代Nb原子，可得到具有更佳微波介電特性的Zn(Nb0.95Ta0.05)2O6 (Q×f ~ 152,000 GHz)，以利於更高頻微波元件之運用。
(2)鉭酸鋅(ZnTa2O6)介電陶瓷擁有 ~ 37.64，Q×f ~ 63,700 GHz，τf ~ 8.8 ppm/°C的微波介電特性，其具有高介電常數及高溫度穩定性的特色，能有效運用於高頻通訊元件上(例如：GPS天線，WLAN濾波器等等)。在本論文中，嘗試著開發具有更高Q值的Tri-αPbO2系統，分別利用Co，Mn，Mg，Ni部分取代Zn原子及Nb部分取代Ta原子，可得具有更佳微波介電特性的(Zn0.95Co0.05)Ta2O6 (Q×f ~ 112,000 GHz)及Zn(Ta0.95Nb0.05)2O6 (Q×f ~ 86,000 GHz)，以利於更高頻微波通訊元件之運用。針對上述研究，並使用XRD，EDX，SEM及HR-TEM來加以鑑定及分析。

二、高介電常數微波材料之研究
La(Mg0.5Ti0.5)O3介電陶瓷擁有 ~ 29，Q×f ~ 75,500 GHz，τf ~ –65 ppm/°C的微波介電特性，其具有高介電常數、高品質因數及低成本的特色；然而，其共振頻率溫度飄移係數為負值及燒結溫度過高(1600°C)等缺點，無法有效的運用於微波元件上；因此，予以加入具有正溫度飄移係數的陶瓷材料(例如：Ca0.8Sm0.4/3TiO3，Ca0.8Sr0.2TiO3)，這樣不但降低其燒結溫度，並同時獲得具有更高介電常數及高溫度穩定性的微波陶瓷材料0.5La(Mg0.5Ti0.5)O3–0.5Ca0.8Sr0.2TiO3 ( ~ 47.12，Q×f ~ 35,000 GHz，τf ~ –4.7 ppm/°C)。針對上述研究，並使用XRD及SEM來加以鑑定及分析。

三、低溫共燒(LTCC)微波介電材料之研究
Zn(Nb0.95Ta0.05)2O6介電陶瓷擁有 ~ 24.57，Q×f ~ 152,000 GHz，τf ~ –71.1 ppm/°C的優良微波介電特性。同時，為使介電材料積體化以達到微波元件縮小化的目標，可經由添加燒結促進劑CuO促使材料緻密化及降低燒結溫度，並探討液相對其微波特性與燒結行為之影響。由實驗結果得知，當添加4.5 wt%的CuO於Zn(Nb0.95Ta0.05)2O6陶瓷材料中，並於930°C持溫2小時下，具有最佳微波介電特性( ~ 22.87，Q×f ~ 77,200 GHz，τf ~ –70.8 ppm/°C)。與原來未添加燒結促進劑的材料燒結溫度(1175°C)比較，可大幅降低燒結溫度達245°C。期盼能有效運用於低溫共燒陶瓷製程(LTCC)，並適合於衛星定衛天線基板之使用。

四、低損耗Mg4Ta2O9介電薄膜之製備及其特性之研究
薄膜技術已經成為今日積體電路的主要技術，因而開發具有低漏電流的介電薄膜就變得非常重要。由於Mg4Ta2O9介電陶瓷擁有低損耗(Q×f ~ 347,000 GHz)的微波介電特性；故本論文中，嘗試著運用射頻磁控濺鍍系統將Mg4Ta2O9介電材料予以薄膜化，並在不同製程參數下，製備出具有高品質之介電薄膜，並進行物理及電性特性之分析。

五、微帶線帶通濾波器之設計與製作
以第一部份完成之高Q 微波介電材料(0.92(Mg0.95Co0.05)2TiO4–0.08Ca0.8Sr0.2TiO3 (0.5 wt% B2O3))為基板，設計一個適用於微波通訊系統上的微帶線帶通濾波器，其中包含元件設計觀念、製程條件及量測分析，並將自行研製的濾波器予以實踐在自製基板上，完成了由材料開發到元件設計的實際應用。

Microwave dielectric resonators (DRs) which are fabricated by high dielectric constant, high quality factor, and good temperature stability of microwave dielectric materials are suitably applied in antennas, filters, oscillators, and diplexers. Recently, with the rapidly progress in the microwave communication systems, miniaturization and performance enhancement have become two main requirements of the microwave devices. Therefore, high quality factor dielectric materials can be utilized in designing high-performance microwave devices in communication system. Moreover, the integration of dielectric materials is also main method to carry out the miniaturization of microwave devices. In addition, to develop microwave dielectric materials, lower sintering temperatures plays an important role in the future. As mentioned above, the main study of this dissertation is divided five parts which preparation of high dielectric constant, high quality factor, low sintering temperature microwave dielectric materials, fabrication of high quality Mg4Ta2O9 dielectric thin films and their applications on microstrip bandpass filters.

1.Development of High Q Microwave Dielectric Materials
[a]Study of Mg2TiO4 Ceramics:
(1)Binary titanate ceramic Mg2TiO4 ( ~ 14, Q×f ~ 150,000 GHz, and τf ~ –50 ppm/°C), having extremely high quality factor, were reported as promising dielectric ceramics for microwave applications. Their low cost even brought much more attention. In fact, they have already been used as dielectric materials for GPS antennas and wireless LAN filters. Therefore, the spinel-structured Mg2TiO4 is worthy to investigate its microwave properties. In this dissertation, with partial replacement of Mg by Co or Ti by Sn, the Q×f of the dielectrics (Mg0.95Co0.05)2TiO4 ( ~ 15.7, Q×f ~ 286,000 GHz, and τf ~ –52.5 ppm/°C) and Mg2(Ti0.95Sn0.05)O4 ( ~ 15.57, Q×f ~ 318,000 GHz, and τf ~ –45.1 ppm/°C) can be easily boosted to a value higher than 250,000 GHz and retain compatible and τf.
(2)In order to achieve temperature-stable materials, CaTiO3, Ca0.61Nd0.26TiO3, Ca0.6La0.8/3TiO3, Ca0.8Sm0.4/3TiO3, and Ca0.8Sr0.2TiO3 were added to (Mg0.95Co0.05)2TiO4 and Mg2(Ti0.95Sn0.05)O4 ceramics, respectively. Addition of compensators, having much smaller grain sizes in comparison with that of (Mg0.95Co0.05)2TiO4 and Mg2(Ti0.95Sn0.05)O4, could effectively hold back abnormal grain growth in the (Mg0.95Co0.05)2TiO4 and Mg2(Ti0.95Sn0.05)O4 matrixes. Hence, using the compensators can effectively lower the sintering temperature of the ceramic bulks. Dielectric characteristics and sintering behavior of these ceramic systems were investigated. A two-phase system, which was confirmed by the XRD patterns and the EDX analysis. Moreover, the microstructures of the sintered bulks were characterized by SEM.
(3)As mentioned above, the optimal microwave dielectric properties are achieved in 0.92(Mg0.95Co0.05)2TiO4–0.08Ca0.8Sr0.2TiO3 ceramics sintered at 1300°C for 4 h with a dielectric constant ( ) value of 19.22, a quality factor (Q×f) value of 123,200 GHz, and a temperature coefficient of resonant frequency (τf) value of 2.8 ppm/°C. Furthermore, in order to lower the sintering temperature, sintering aid such as B2O3 was used to produce the liquid phase that degrades the sintering temperatures. The microstructures and the microwave dielectric properties with B2O3 additions were investigated.

[b] Study of ZnX2O6 (X = Nb and Ta) Ceramics:
(1)Partial Replacement of ZnNb2O6 Ceramics
The effects of substituting Nb5+ with Ta5+ on the microwave dielectric properties of the ZnNb2O6 ceramics were investigated in this dissertation. The forming of Zn(Nb1-xTax)2O6 (x = 0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. A fine combination of microwave dielectric properties ( ~ 24.57, Q×f ~ 152,000 GHz, and τf ~ –71.1 ppm/°C) was achieved for Zn(Nb0.95Ta0.05)2O6 solid solution sintered at 1175°C for 2 h.
(2)Partial Replacement of ZnTa2O6 Ceramics
ZnTa2O6 microwave dielectric materials have been developed as the microwave dielectric resonators in the past, because the dielectric resonators fabricated by ZnTa2O6 ceramics reveal the excellent microwave dielectric properties. However, the quality factor of ZnTa2O6 ceramic is still not good enough for the applications at the microwave frequency. In order to improve the microwave dielectric properties, with the partial replacement of ZnTa2O6 ceramics were investigated. The forming of (Zn0.95M2+0.05)Ta2O6 (M2+ = Co, Mn, Mg, and Ni) and Zn(Ta0.95Nb0.05)2O6 solid solutions were confirmed by the XRD patterns, HR-TEM lattice images, and the EDS analysis.

2.Research of High K Microwave Dielectric Materials
Several complex perovskites ceramics A(B2+0.5B4+0.5)O3 (where A = La, Nd, and Sm; B2+ = Mg, Zn, and Co; B4+ = Ti and Sn) have been reported due to their excellent microwave dielectric properties. Among them, La(Mg0.5Ti0.5)O3 has a high dielectric constant ( ~ 29), a high quality factor (Q×f value ~ 75,500 GHz), and a large negative temperature coefficient of resonant frequency (τf ~ –65 ppm/°C). In order to compensate the negative τf of the La(Mg0.5Ti0.5)O3 ceramics, Ca0.8Sm0.4/3TiO3 and Ca0.8Sr0.2TiO3 perovskite which have positive τf had been added. The experiment result showed that 0.5La(Mg0.5Ti0.5)O3–0.5Ca0.8Sr0.2TiO3 have the best microwave dielectric properties, it’s ~ 47.12, Q×f ~ 35,000 GHz, and τf ~ –4.7 ppm/°C. In addition, the X-ray diffraction (XRD) patterning and scanning electron microscopy (SEM) analysis were also employed to study the crystal structures and microstructures of the ceramics.

3.Investigation of Low-Temperature Sintering Microwave Dielectrics Using CuO-Doped Zn(Nb0.95Ta0.05)2O6 Ceramics
The influence of CuO additions on the sintering behavior and microwave dielectric properties of Zn(Nb0.95Ta0.05)2O6 ceramic and its chemical compatibility with Ag have been investigated. The CuO additions not only effectively lower the sintering temperature of Zn(Nb0.95Ta0.05)2O6 ceramics to 930°C, the optimized sintering temperatures also decrease with increasing CuO contents due to the liquid phase effect. The Q×f value is a function of the sintering temperature and the amount of CuO addition. With 4.5 wt% CuO addition, it varies from 8,500 to 77,200 GHz as the sintering temperature increases from 840°C to 930°C for 2 h. For low-firing multilayer applications, a combination of dielectric properties with an ~ 22.87, a Q×f ~ 77,200 GHz, and a τf ~ –70.8 ppm/°C can be achieved for 4.5 wt% CuO-doped Zn(Nb0.95Ta0.05)2O6 ceramic sintered at 930°C for 2 h.

4.Fabrication and Characteristics of Mg4Ta2O9 Dielectric Thin Films by RF Magnetron Sputtering
Recently, high permittivity dielectric films with low leakage current and high break-down voltage are of the great importance for a variety of integrated devices, such as storage capacitors in dynamic random access memory (DRAM). In this dissertation, the Mg4Ta2O9 target was prepared and used for deposition. The crystal structure and surface morphology of the films affected by deposition conditions, such as RF power and sputtering time. The physical and electrical characteristics of the thin films were investigated.

5.Design and Fabrication of Microstrip Bandpass Filters
The microstrip bandpass filters of SIR with a (skew-symmetric) feed structure and open-stubs are presented. In this dissertation, using high permittivity ceramic substrates to miniaturize the sizes of Butterworth bandpass filters are investigated. The selectivity and stopband rejction of the designed filters can be improved significantly by utilizing the feed structure and open-stubs. The responses of the bandpass filters using Al2O3 ( = 9.8, = 0.0005, 1.6-mm thickness), and 0.92(Mg0.95Co0.05)2TiO4–0.08Ca0.8Sr0.2TiO3 with 0.5 wt% B2O3 addition ( = 18.07, = 0.0001, 1.6-mm thickness) ceramic substrates are designed at a center frequency of 2.4 GHz. The compact size and high-performance of the filter are presented in this thesis.

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