摘要
本實驗是利用成本較經濟且製程較簡單的電沉積(電鍍)方法取代傳統的物理氣相沉積法來製造薄膜型的太陽能電池。
首先，我們會在ITO玻璃基板上電沉積我們的主吸收層二硒化銅來當P型，也就是一般所謂的CIS(CuInSe2:copper-indium-diselenium)，接著在CIS層上面用化學水浴法(Chemical Bath Deposition)沉積不具毒性且較無污染的ZnS層以取代一般常用的CdS層來當N型，最後再電沉積ZnO來當抗反射層(Anti-Reflection Layer)，再蒸鍍Ni-Al當前電極，這樣就完成了薄膜型太陽能電池的元件。
而對於電鍍薄膜的實驗中，電鍍液的濃度，電鍍液的pH值，電沉積電位，電沉積的時間，以及成膜後的鍛燒溫度和時間都是電鍍CIS薄膜與ZnO的實驗變因，而化學浴的溫度與化學浴的環境，對於無電電鍍ZnS有相當程度的影響，故我們做出來的薄膜利用XRD、EDX、SEM、UV-Vis、α-step以及STM等工具鑑定；再利用四極探針測量主吸收層是否為N-type或是P-type的導電形式；等整個元件完成之後我們再利用太陽光模擬器與I-V電阻儀量測光電轉換效率，以確認所做的元件具有太陽能電池的功能。

Abstract
Instead of the traditional physical vapor deposition (PVD), we fabricated the solar cell devices with a simple and economic method that the electrodeposition was adopted.
There are two parts in this study, one is to electroplate the Mo-Ni (molybdenum-nickel) alloys layer on the ITO glass substrate first, followed by the CIS (copper-indium-diselenium) layer, ZnS layer and ZnO layer; and the other part is to electroplate the CIS layer directly on the ITO substrate without the Mo-Ni layer.
Some parameters and variables are needed to be considered in the study, including concentrations, pH value, temperature of chemical bath, electroplating time, voltage and current, annealing temperature, and time. However, it is not simple to find the optimized conditions without a series of careful investigations as well as the accuracy and precision are needed to be examined. Analytical instrumentations are applied to characterize the desired thin films by XRD、EDX、SEM、UV-Vis、α-step and STM.

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