本研究目標是利用液相沉積法製備α-Ga2O3薄膜，探討生長環境中各項因素的調變對於結晶品質的影響，再者是後續利用α-Ga2O3薄膜製備MIS( Ni/α-Ga2O3/Si )二極體之電特性討論，包含提高位障高度(ФB)抑制漏電流以及提高崩潰電壓。本研究提出對於成長GaOOH的水溶液中水溫的提高，有助於Ga(OH)3解離生成GaOOH晶體，同時改善附著於GaOOH晶體表面的Ga(OH)3膠體狀粒子，並且透過PH值的調變可以完全消除此一膠體狀產物，成功得到乾淨且鎵與氧的元素比例近乎1:2之GaOOH晶體，再進行XRD的分析以及比對，為類單晶(110)優選之α-GaOOH，後續對於退火溫度以及時間的調變成功得到α-Ga2O3 。以此確立的成長條件製作MIS二極體，發現可以提高位障高度(ФB) 0.4eV，提高on/off ratio 100倍，並增加崩潰電壓與減少漏電流密度。然而二極體的位障高度(ФB)主導了逆向飽和電流與順向導通電壓，所以低順向壓降與之逆向飽和電流是背道而馳的兩個目標。目前我們可做到在-2V的時候漏電流大小為1.07*10-5A/cm2，而崩潰電壓目前則可以做到-166V，在沒有任何保護環或是周圍絕緣的情況下，。在光感測器的應用方面，我們分析光響應度改善:經過成長α-Ga2O3的元件比只有SiO2的MIS二極體提升了37.3倍，顯示出α-Ga2O3在光感測器方面的潛力。

In this thesis, the design and fabrication of Ni/Ga2O3/Si/Al MIS diodes with α-Ga2O3 insulator layer prepared by liquid phase deposition on silicon substrate. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased and the responsivity increased with an insulator layer apply. It was found that the diode and fabrication technology developed in the present thesis is applicable to the realization of MIS diodes with a high breakdown voltage (≥166V),and a low reverse leakage current density (1.07×10-5A/cm2@-2V),and a barrier height 1.085eV, and increase the responsivity 37.3 times.

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