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研究生： 徐璟銓
Hsu, Ching-Chuan
論文名稱： 具有特定氧化鎵與氧化鋯薄膜層之氮化鎵系發光二極體之研製
Fabrication of GaN-Based Light-Emitting Diodes with Specific Ga2O3 and ZrO2 Layers
指導教授： 劉文超
Liu, Wen-Chau
共同指導: 許渭州
Hsu, Wei-Chou
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics Engineering
論文出版年： 2021
畢業學年度： 109
語文別： 英文
論文頁數： 95
中文關鍵詞： 氮化鎵 、發光二極體 、感應耦合電漿離子 、抗反射保護層 、氧化鎵 、氧化鋯 、二氧化矽 、電流阻擋層 、表面絕緣層
外文關鍵詞： GaN, light-emitting diodes, inductively coupled plasma, anti-reflection passivation layer, Ga2O3, ZrO2, SiO2, current blocking layer (CBL), surface passivation layer (SPL)
相關次數： 點閱：214  下載：0 
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    • 在本論文中，為了改善氮化鎵系(GaN)發光二極體體之光萃取效率(light extraction efficiency)，吾人研製一系列具有氧化鎵與氧化鋯薄膜層之氮化鎵系發光二極體。以此複合結構為主軸，進一步提出奈米材料應用及元件製程技術，其中包含利用共濺鍍薄膜沉積系統(co-sputtering)沉積氧化鎵(Ga2O3)和氧化鋯(ZrO2)，並以此兩種材料當作電流阻擋層(current blocking layer)以及表面絕緣層(surface passivation layer)有效提升氮化鎵系發光二極體之光電轉換效率(wall-plug efficiency, WPE)。本研究對複合結構式氮化鎵系發光二極體之光電特性，及各種特定結構之製備方式皆有深入且詳細的研究及探討。
    首先，吾人利用共濺鍍薄膜沉積系統(co-sputtering)來製作氧化鎵(Ga2O3)的電流阻擋層(current blocking layer)以及表面絕緣層(surface passivation layer)的氮化鎵系發光二極體。由於氧化鎵(Ga2O3)的特性，所以在做電流阻擋層的時候可以提升電流擴散現象以及降低Fresnel光損失(Fresnel loss)。經過一系列的實驗，用氧化鎵(Ga2O3)當電流阻擋層以及表面絕緣層的最佳厚度分別為10奈米以及50奈米。此元件在具有10奈米的氧化鎵(Ga2O3)電流阻擋層及50奈米的氧化鎵(Ga2O3)表面絕緣層時有最佳的特性。相較於傳統平面式氮化鎵系發光二極體，此元件在光輸出功率(light output power)、發光效率(luminous efficacy)、外部量子效率(external quantum efficiency)及光電轉換效率(wall-plug efficiency)分別提升80.2%、 59.3%、80.5%及62.8%。此外在遠場效應(far-field)的分析中，此元件也展現出非常好的特性。
    其次，為了有效改善高效率發光二極體之光萃取效率，吾人提出利用氧化鋯(ZrO2)取代氧化鎵(Ga2O3)來當電流阻擋層以及表面絕緣層。由於氧化鋯(ZrO2)的特性，所以在做電流阻擋層的時候可以提升電流擴散現象以及降低Fresnel光損失(Fresnel loss)。經過一系列的實驗，用氧化鋯(ZrO2)當電流阻擋層以及表面絕緣層的最佳厚度皆為50奈米。此元件在具有50奈米的氧化鋯(ZrO2)電流阻擋層及50奈米的氧化鋯(ZrO2)表面絕緣層有最佳的特性。相較於傳統平面式氮化鎵系發光二極體，在光輸出功率(light output power)、發光效率(luminous efficacy)、外部量子效率(external quantum efficiency)及光電轉換效率(wall-plug efficiency)分別提升66.1%、55.6%、66.1%及63.3%。此外在遠場效應(far-field)的分析中，此元件也展現出非常好的特性。
    最後，延續前章探討經由共濺鍍薄膜沉積系統(co-sputtering)製作的具有特定氧化鋯(ZrO2)薄膜層系發光二極體。吾人發現氧化鋯(ZrO2)比氧化鎵(Ga2O3)更適合當電流阻擋層。因此在此章節，吾人使用氧化鋯(ZrO2)當電流阻擋層，去討論不同材料的表面絕緣層對元件特性之影響。吾人使用當表面絕緣層的材料有氧化鎵(Ga2O3)、氧化鋯(ZrO2)以及二氧化矽(SiO2)。由於這些材料的特性，所以在當作電流阻擋層的時候可以提升電流擴散現象以及降低Fresnel光損失(Fresnel loss)。此元件在具有50奈米氧化鋯(ZrO2)電流阻擋層及50奈米氧化鎵(Ga2O3)表面絕緣層有最佳的特性。相較於傳統平面式氮化鎵系發光二極體，在光輸出功率(light output power)、發光效率(luminous efficacy)、外部量子效率(external quantum efficiency)及光電轉換效率(wall-plug efficiency)分別提升66.9%、61.1%、66.9%及42.5%。此外在遠場效應(far-field)的分析中，此元件也展現出非常好的特性。
    本研究論文中所研製之高品質氮化鎵系發光二極體，皆有效提升光電轉換效率，以及降低表面漏電流和Fresnel光損失(Fresnel loss)，因此，在商業應用上相當具有潛力。

    In this study, in order to enhance current spreading performance and light extraction efficiency (LEE), a series of high-performance GaN-based light-emitting diodes (LEDs) with specific methods have been manufactured and studied. A novel nanomaterial and device manufacturing process is proposed, including Ga2O3/ZrO2 current blocking layers (CBLs) and different surface passivation layers (SPLs) hybrid structure deposited on the surface of natural p-GaN to improve the efficiency of wall-plug efficiency (WPE) of GaN-based LED. Therefore, the enhanced performances, and reliability of the GaN-based LEDs can be obtained. Optical and electrical properties and the epitaxial quality of GaN-based LEDs are studied and discussed. In addition, the manufacturing process and growth mechanism of Ga2O3/ZrO2 CBLs and different SPLs are discussed in detail.
    A new device structure, which includes a Ga2O3 current blocking layer (CBL) and a Ga2O3 surface passivation layer (SPL), have been used to fabricate a GaN-based light-emitting diode (LED). Due to the inherent properties of Ga2O3 material, the current spreading phenomenon is effectively improved and the surface leakage current and Fresnel reflection are remarkably reduced. The appropriate thicknesses of the Ga2O3 CBL and SPL, according to the results from series experiments, are 10 nm and 50 nm, respectively. Experiment results show that under an injection current of 100 mA, the studied LED device with a 10-nm-thick Ga2O3 CBL and a 50-nm-thick Ga2O3 SPL has achieved enhancements of 80.2%, 59.3%, 80.5%, and 62.8% in light output power (LOP), luminous efficacy, external quantum efficiency (EQE), and wall-plug efficiency, respectively, in comparison to a conventional LED without the designed structure. Besides, the studied LED exhibits obvious improvement in far-field radiation pattern compared to the conventional LED device. Thus, the studied structure, which includes an appropriate Ga2O3¬ CBL and SPL, offers a promising route to fabricate high-performance GaN-based LEDs.
    In addition, we changed Ga2O3 to ZrO2, and used ZrO2 current blocking layer (CBL) and ZrO2 surface passivation layer (SPL) to manufacture the new GaN-based light-emitting diode (LED). Due to the inherent characteristics of the ZrO2 material, the current spreading phenomenon is effectively improved, and reduce the surface leakage current and Fresnel reflection significantly. Through a series of experiments, the appropriate thickness of ZrO2 CBL and SPL are both 50 nm, respectively. In the experiment, the investigated LED devices with 50-nm-thick ZrO2 CBL and 50-nm-thick ZrO2 SPL shows enhancements of 66.1%, 55.6%, 66.1% and 63.3% in the light output power (LOP), luminous efficiency, external quantum efficiency (EQE) and wall-plug efficiency, respectively, as compared to the traditional LED without design structure, under the injection current was 100 mA. Compared with the traditional LED device, the studied LED in the far field radiation pattern gives a significant improvement. Therefore, the investigated structure including the appropriate ZrO2 CBL and SPL showa a promising way to manufacture high-performance GaN-based LEDs.
    More, the characteristics of GaN-based light-emitting diodes (LEDs) with a hybrid structure, including a ZrO2 CBL, and different SPLs, such as Ga2O3 (50 nm), ZrO2 (50 nm), and SiO2 (50 nm), were fabricated and studied. The use of different material of SPL improved optical properties, due to the inherent properties and the highest roughness surface. On the other hand, the employment of the Ga2O3 SPL shows a best performance than other. Experimentally, as compared to the conventional LED device, under as injection current of 100 mA, attains respectively enhancements of 66.9%, 61.1%, 66.9%, 42.5% in light output power (LOP), luminous efficiency, external quantum efficiency (EQE) and wall-plug efficiency. This means, these results indicate that the use of an appropriate hybrid structure can effectively improve the optical performance of high-performance GaN-based LED applications.
    Therefore, we conclude proposed hybrid specific structure for GaN-based LEDs does improve the total light output performance and current spreading phenomenon, and also reduce surface leakage current and Fresnel reflection. Thus, GaN-based high-performance LEDs have commercial potential and can compete with traditional light sources for practical applications in solid-state lighting.

    Abstract Table Captions Figure Captions Chapter 1 Introduction 1-1. The History and Development of GaN-based LEDs 1 1-2. The Problems of GaN- based LEDs 4 1-3. Review of Current Blocking Layers (CBLs) 4 1-4. Review of Surface Passivation Layers (SPLs) 5 1-5. Thesis Organizations 5 Chapter 2 GaN-Based Light-Emitting Diodes with Different Thicknesses of Ga2O3 Current Blocking and Surface Passivation Layers 2-1. Introduction 7 2-1-1. Introduction 7 2-1-2. Formation of Ga2O3 CBLs with Different Thicknesses 9 2-1-3. Formation of Ga2O3 SPLs with Different Thicknesses 9 2-1-4. Total internal reflection (TIR) 10 2-1-5. Mechanisms of Anti-reflection 11 2-2. Fabrication Processes of LED Devices 13 2-2-1. LED Wafer Cleaning Process 13 2-2-2. Devices Structure and Fabrication 14 2-3. Experimental Results and Discussion 15 2-3-1. Surface Morphology 15 2-3-2. Transmittance and Atom Force Microscope 16 2-3-3. Electrical Properties 17 2-3-4. Optical Properties 18 2-3-5. Near-Field Light Emission Mapping 20 2-3-6. Far-Field Radiation Pattern 21 2-4. Summary 21 Chapter 3 GaN-Based Light-Emitting Diodes with Different Thicknesses of ZrO2 Current Blocking and Surface Passivation Layers 3-1. Introduction 23 3-1-1. Introduction 23 3-1-2. Formation of ZrO2 CBLs with Different Thicknesses 24 3-1-3. Formation of ZrO2 SPLs with Different Thicknesses 25 3-2. Fabrication Processes of LED Devices 26 3-2-1. LED Wafer Cleaning Process 26 3-2-2. Devices Structure and Fabrication 26 3-3. Experimental Results and Discussion 28 3-3-1. Surface Morphology 28 3-3-2. Atom Force Microscope 28 3-3-3. Electrical Properties 29 3-3-4. Optical Properties 30 3-3-5. Near-Field Light Emission Mapping 32 3-3-6. Far-Field Radiation Pattern 33 3-4. Summary 34 Chapter 4 GaN-Based Light-Emitting Diodes with ZrO2 Current Blocking and Different Surface Passivation Layers 4-1. Introduction 35 4-1-1. Introduction 35 4-2. Fabrication Processes of LED Devices 37 4-2-1. LED Wafer Cleaning Process 37 4-2-2. Devices Structure and Fabrication 37 4-3. Experimental Results and Discussion 39 4-3-1. Surface Morphology 39 4-3-2. Atom Force Microscope 39 4-3-3. Electrical Properties 40 4-3-4. Optical Properties 41 4-3-5. Near-Field Light Emission Mapping 43 4-3-6. Far-Field Radiation Pattern 44 4-4. Summary 44 Chapter 5 Conclusion and prospects 5-1. Conclusion 46 5-2. Prospects 49 References 50 Figures

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