本論文主要是探討使用磁控濺鍍系統成長氮化鋁(AlN)在圖案化藍寶石基板上光電特性分析探討，期望可以調整出適當的濺鍍功率和適當的厚度來降低缺陷密度的產生，進而提升光輸出功率。
在實驗方面我們分別改變了功率及厚度，從XRD上計算出FWHM加以探討缺陷密度的問題，再從光電特性上來做分析。在這邊我們發現當厚度從15nm到25nm時這段可以明顯增加薄膜品質，然而在25nm到35nm時薄膜品質並無明顯，而從濺鍍功率瓦數數值來說明顯可以看出在低濺鍍瓦數下薄膜的品質會來的更好，而其最好的參數條件為在330W下厚度為25nm，在XRD(002)和(102)面上半高寬分別為206.7 arcsec和147.8 arcsec，順向導通電壓為2.875V，光輸出功率為14.04mW，而在太陽能光電轉換效率為1.53%為較佳之條件。

In this research,we investigated how to use magnetron sputtering system to grow AlN on patterned sapphire substrates and discussing it's optical and electrical characteristics.We hope to find out the most ideal sputtering power and the proper film thickness in order to reduce defects and further improve light output power.
As for our experiments ,we have changed sputtering power and film thickness ,we can obtain FWHM value from my XRD chart ,and investigating the problems that defects would influence,and analyzing further in optical and electrical characteristics .In our experiments ,we varied our film thickness from 15nm to 25nm which can greatly improve our film quality .However, film thickness from 25nm to 35nm doesn't change the film's physical features .As for sputtering power ,the lower power we used the greater film quality we got .The best parameters we obtained was sputtering power 330W and film thickness 25nm.The GaN with the sputtered AlN nucleation layer showed 206.7 and 147.8arcsec of the FWHM of the (002) and (102)
spectra ,respectively.And forward bias was 2.875V and light output power was 140.04W.Finally,power conversion efficiency 1.53% was the best condition.

第一章 序論

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第二章實驗原理與製程設備量測系統

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第三章實驗研究製程步驟

[1]徐玉輝，“藉由奈米結構改善氮化鎵發光二極體之光電特性，國立成功大學光電科學與工程學系光電產業研發碩士專班，碩士論文 (2012)