在基板沒有外加偏壓及使用鑽石種晶法的前處理下，利用微波電漿化學氣相沉積系統，以甲烷及氫氣作為前驅物，成功的使鑽石成核於銅箔基板。

在實驗中使用兩種不同的基板，未經預處理及使用水進行空蝕作用的銅箔，並使用AFM驗證，經由水進行空蝕作用的基板，其表面粗糙度大於未經處理的銅箔基板，而實驗結果顯示粗糙的表面有利於提升鑽石成核密度。

以水空蝕作用預處理的銅箔基板，長出連續的鑽石薄膜，並利用SEM及拉曼光譜儀證明所長出的薄膜為高品質的鑽石。

最後利用TEM及其擇區繞射圖來分析鑽石的成核點，分析結果顯示，鑽石於銅箔上直接形成異質磊晶。

利用TCAD模擬軟體，建立鑽石、碳化矽、氮化鎵及矽，其N型和P型FinFET以及相關的物理模型，比較在300K-700K的溫度下，個別的漏電流及飽和電流，並深入分析各項與溫度相關的係數對漏電流及飽和電流的影響。比較結果顯示，不論是N型還是P型的矽FinFET在高溫下的漏電流都很大，使其失去電晶體「關」的功能，而在高溫下的寬能隙半導體之FinFET仍維持極低的漏電流。在飽和電流方面，在700K下，P型的鑽石FinFET及N型的氮化鎵FinFET，分別為本篇碩論中寬能隙半導體P型FinFET及N型FinFET中飽和電流最大的元件。

Without bias enhanced nucleation and the diamond seeding method for substrate pretreatment, using a microwave plasma chemical vapor deposition system with methane and hydrogen as precursors, diamond films were successfully nucleated on the copper foil with water cavitation. Diamond nucleation density promoted by the cavitation effect was demonstrated .And SEM and Raman spectroscopy is used to make sure that high-quality diamond films were deposited. Finally, TEM and selected area diffraction images were used to analyze the nucleation position of diamonds. The result showed that diamond heteroepitaxy on the copper foil .

Use TCAD simulator to establish the diamond, silicon carbide, gallium nitride and silicon N-type and P-type FinFET and their related physical models at 300K-700K, and analyze the temperature dependent material properties that affect the leakage current and saturation current . The results show that both N-type and P-type silicon FinFETs have a large leakage current at high temperatures，and thus they cannot be turned off at high temperatures. While the Leakage current of wide bandgap semiconductors FinFETs at high temperatures remain extremely low. At 700K, the P-type Diamond FinFET and the N-type Gallium Nitride FinFETs have the largest saturation current among the P-type and N-type wide bandgap semiconductors FinFETs in this article.

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