本論文探討了使用射頻磁控濺鍍技術沉積氧化鋁銦鎵薄膜時，不同製程參數對薄膜特性的影響，並研究了這些薄膜在紫外光電元件中的應用，包括紫外光感測器和薄膜電晶體。
首先，本研究利用磁控濺鍍技術沉積氧化鋁銦鎵薄膜，通過調整共濺鍍的瓦數來改變製程參數，並進行光學、結構及材料分析。光學分析顯示，氧化鋁銦鎵薄膜在可見光範圍內具有極高的透明度，平均穿透率接近80%。結構分析部分表明，不同通氧量的氧化鋁銦鎵薄膜均具有均勻的表面，且表面粗糙度均方根值均小於1.2 nm，材料分析則通過X射線光電子能譜顯示，氧化鋁銦鎵薄膜中的氧空缺隨著通氧量的增加而逐漸減少。
在本研究的第二部分，我們利用磁控濺鍍技術製作了氧化鋁銦鎵光感測器，並以不同的通氧量數作為製程控制參數，製作了20W/100W O2 0%、20W/100W O2 4%和20W/100W O2 10%三種光感測器。結果顯示，隨著濺鍍氧化鋁瓦數的增加，感測器的暗電流與光電流皆有下降。最終，20W/100W O2 10%的氧化鋁銦鎵光感測器展現了最佳性能，光暗電流比為14.2，響應值為0.021 (A/W)，響應拒斥比為2.22x10^2。
在研究的第三部分，我們利用磁控濺鍍技術製作氧化鋁銦鎵薄膜電晶體。首先通過調整共濺鍍瓦數來改變缺陷和自由載子的數量，從而影響薄膜電晶體的特性。接著，通過控制通氧量比例，改善了原本關電流較大的薄膜電晶體特性。然後，我們將氧化層材料從二氧化矽更換為氧化鋁，以進一步降低漏電流並優化元件特性。最終，在100W/80W的共濺鍍瓦數和200nm氧化鋁氧化層條件下，氧化鋁銦鎵薄膜電晶體達到最佳性能，臨界電壓為3.79 (V)，場效電子遷移率為11.1(cm2/Vs)，開關電流比為7.6x10^6，次臨界擺幅為0.532 (V/decade)。
最後，我們對100W/100W氧化鋁銦鎵薄膜電晶體進行照光量測，結果顯示其響應拒斥比達到2.56×10^2，但時間響應未達到理想值，無法在短時間內完成開關動作。

This thesis explores the effects of various process parameters on the characteristics of aluminum indium gallium oxide (AlInGaO) thin films deposited using RF magnetron sputtering. It also examines their applications in ultraviolet (UV) optoelectronic devices, such as UV photodetectors and thin-film transistors (TFTs).
Firstly, AlInGaO thin films were deposited using magnetron sputtering, with process parameters adjusted by varying the co-sputtering power. Optical, structural, and material analyses were conducted. The optical analysis revealed that the AlInGaO thin films exhibited very high transparency in the visible light range, with an average transmittance close to 80%. Structural analysis revealed that AlInGaO thin films deposited with varying oxygen flow rates exhibited uniform surfaces, with root mean square roughness values of less than 1.2 nm. Material analysis using X-ray photoelectron spectroscopy (XPS) indicated that the number of oxygen vacancies in the AlInGaO thin films decreased as the oxygen flow rate increased.
In the second part of this study, AlInGaO UV photodetectors were fabricated using magnetron sputtering, with varying the oxygen flow rate as the process control parameter. Three types of photodetectors were made: 20W/100W O2 0%、20W/100W O2 4% and 20W/100W O2 10%. The results showed that as the sputtering power of aluminum increased, both the dark current and the photocurrent of the detectors decreased. Ultimately, the 20W/100W O2 10% AlInGaO photodetector exhibited the best performance, with a dark-to-light current ratio of 14.2, a responsivity of 0.021 (A/W), and a rejection ratio of 2.22 x 10^2.
In the third part of the study, AlInGaO TFTs were fabricated using magnetron sputtering. Initially, the co-sputtering power was adjusted to modify the number of defects and free carriers, thereby altering the characteristics of the TFTs. By controlling the oxygen flow rate, the characteristics of the TFTs with initially high off-state current were improved. Subsequently, the oxide layer material was changed from silicon dioxide to aluminum oxide to further reduce leakage current and optimize device performance. Under the conditions of 100W/80W co-sputtering power and a 200 nm aluminum oxide layer, the AlInGaO TFTs achieved optimal performance. They exhibited a threshold voltage of 3.79 V, a field-effect mobility of 11.1 (cm²/Vs), an on/off current ratio of 7.6x10^6, and a subthreshold swing of 0.532 (V/decade).
Finally, optical measurements were conducted on the 100W/100W AlInGaO TFTs. The results showed a rejection ratio of 2.56×10^2; however, the time response did not meet the ideal values, and the devices could not complete switching actions within a short period.

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