第一部份我們採用的材料是氧化鋁鎵(AGO)，我們預計透過摻雜不同比例的鋁進入氧化鎵薄膜，以增加氧化鎵的能隙，讓響應峰值往更短波長靠近。為了探討不同鋁比例對於光感測器的影響，我們改變鋁靶材的直流功率，以達到不同的摻雜濃度。
第二部分，雖然氧化鋁鎵光感測器具有很高的拒斥比以及很短的響應時間，但是因為響應度較低，我們期望尋找其他材料可以提升響應度，因此我們找到氧化銦鎵鋅(IGZO)這個材料，我們希望透過氧化銦鎵鋅的高載子濃度以及高電子遷移率能夠提升響應度，而且現行的薄膜電晶體很多是由氧化銦鎵鋅所組成，我們希望在氧化銦鎵鋅光感測器提高響應度的同時，又能整合到氧化銦鎵鋅的薄膜電晶體上。第一部分，為了探討退火條件對於光感測器的影響，我們改變不同的爐管環境，然後將所有樣品放在爐管內進行退火。第二部分，為了探討不同氧化鋅比例對於光感測器的影響，我們改變氧化鋅靶材的射頻功率，以達到不同的摻雜濃度。
第三部分，雖然氧化銦鎵鋅具有非常高的響應度以及開關電流比，但是對於波長的選擇性卻不佳，我們原本打算另尋其他材料，這時候我們靈機一動，在原本就已經具有高波長選擇比的氧化鋁鎵中加入氧化銦，合成氧化銦鋁鎵(IAGO)，利用氧化銦的高電導率，提高氧化鋁鎵的響應。為了探討不同氧化銦比例對於光感測器的影響，我們改變氧化銦靶材的射頻功率，以達到不同的摻雜濃度。

The material we used in the first part is aluminum gallium oxide (AGO). We expect to increase the energy gap of gallium oxide by doping different proportions of aluminum into the gallium oxide film, and make the response peak closer to a shorter wavelength. In order to explore the influence of different aluminum ratios on the photodetector, we changed the DC sputter power of the aluminum target to achieve different doping concentrations.
In the second part, although the AGO photodetector has a high rejection ratio and a short response time, because of the low responsivity, we hope to find other materials to improve the responsivity, so we found indium gallium zinc oxide (IGZO). We hope that the high carrier concentration and high electron mobility of indium gallium zinc oxide can improve the responsivity, and most of the thin film transistors are composed of indium gallium zinc oxide. While improving the responsivity, the IGZO photodetector can be integrated into the indium gallium zinc oxide thin film transistor. In the first part, in order to explore the effect of annealing conditions on the photodetector, we changed different furnace tube environments, and then put all samples in the furnace tube for annealing. In the second part, in order to explore the effect of different zinc oxide ratios on the photodetector, we changed the RF sputter power of the zinc oxide target to achieve different doping concentrations.
In the third part, although indium gallium zinc oxide has very high responsivity and photo to dark current ratio, it has poor wavelength selectivity. We originally planned to look for other materials. At this time, we had a brainstorm and added indium oxide to the aluminum gallium oxide which had the high wavelength selectivity to synthesize indium aluminum gallium oxide (IAGO), and the high conductivity of indium oxide is used to improve the responsivity of aluminum gallium oxide. In order to explore the effect of different indium oxide ratios on the photodetector, we changed the RF sputter power of the indium oxide target to achieve different doping concentrations.

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