硫化鋅（ZnS）及氧化鋅（ZnO）具有寬能隙（分別為3.68及3.35 eV）的特性，為Ⅱ-Ⅵ族化合物半導體成員，在商業上經常使用作為螢光粉，同時也應用在薄膜電激發光元件上。優異的發光特性，且可發出可視光使其適合作為螢光材料，主要的用途是在於照明光源、顯示器元件與光輻射偵測器等方面。
　　本論文利用低溫固態及液相化學沉澱方法來製備高品質且奈米化的硫化鋅、硫化鋅摻雜錳及氧化鋅奈米螢光粉，將利用X光繞射、熱差分析、能量分散式X光、掃瞄式電子顯微鏡、光激發光光譜、色度座標、拉曼光譜及阻抗分析等的量測來探討奈米粉末的特性與品質。以改變不同的實驗參數來找出最好的發光效率。
　　實驗顯示，由於粒子尺度的縮小，其光激發光譜（Photoluminescence excitation spectrum, PLE）往短波長偏移的現象，而其光放射光譜（Photoluminescence spectrum, PL）強度與粒子尺度大小、硫化鋅母體之硫與鋅原子成份比例不同而發生變化。當摻雜1mol%錳離子時，其發光強度最強。但若少於或超過此濃度，則發光強度呈現下降。而在501nm波長，可得到氧化鋅之光放射波峰。本實驗成功在低溫100℃，合成一近似白色光的奈米螢光粉。

　　Zinc sulfide (ZnS) and Zinc oxide (ZnO), as II-VI semiconductors with a wide band gap energy of 3.68 eV and 3.35 eV respectively, have received much attention due to their excellent luminescence properties and commercially used as phosphors applicated in electroluminescence devices. They are candidate materials for phosphors that emit visible light. The major and important applications of phosphors are used as light sources, display devices, radiation detectors and so on.
　　In this report, we use low temperature solid-state synthesis and chemical precipitation method to prepare ZnS, ZnO and ZnS doped Mn2+ nanoparticles. The nanoparticles were characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, differential thermal analysis (DTA), high-resolution analytical electron microscopy (HR-AEM), energy dispersive spectrometer (EDS), CIE chromaticity diagram, impedance analyzer (HP-4294A) and Raman spectrum. By means of various experiment parameters to find out the preferred synthesis conditions.
　　From the experiment results, the PLE spectrum exhibits a blue shift due to quantum confinement effect. The dimension of particles and the ratio of Zinc and Sulfur in the ZnS matrix affect the PL intensity. By adding 1 mol% Mn2+ ion, it shows the maximum emission intensity. A green emission peak at 501 nm was observed in PL spectrum of ZnO nanoparticles. In our experiment, we have successfully obtained the phosphor fabricated at low tempereture emits near-white color.

[1] S. M. Sze, Microelectronics Technology: Challenges in the 21st Century,
New Jersey (2002).
[2] 盧榮宏、謝立宜、游元鵬、李芳瑜及徐文泰，奈米技術專刊，53。
[3] S.T. Lee, N. Wang, C.S. Lee, Mater. Sci. Eng. A, 286, 16 (2000).
[4] C.B. Murray, D.J. Norris, M.G. Bawendi, J. Am.Chem. Soc. 115, 8706 (1993).
[5] Z.A. Peng, X. Peng, J. Am. Chem. Soc. 123, 1389 (2001).
[6] S.K. Haram, B.M. Quinn, A.J. Bard, J. Am. Chem.Soc. 123, 8860 (2001).
[7] 楊俊瑜，電子產業用螢光材料之應用調查，工業技術研究院：新竹，1992。
[8] 衣立新，無機薄膜電致發光顯示的研究進度，大陸北方交通大學光電子技術研究所，
2000。
[9] Takeda M, Kanatani Y, Kishishita H, Uede H., Yellow Emission thin Film
Electroluminescence Displays , Proc. SPIE, 34 (1983).
[10] Philip D. Rack, Paul H. Holloway, Material Science and Engineering 171
(1998).
[11] J.F. Suyver, S.F. Wuister, J.J. Kelly and A. Meijerink, Nano Lett. 1(4), 429
(2001).
[12] S. Wageh, Zhao Su Ling and Xu Xu-Rong, Journal of Crystal Growth 255, 332
(2003).
[13] Heesun Yang and Paul H. Hollway, Journal of applied Physics 93 (1), 586
(2003) .
[14] F.H. Su, B.S. Ma, Z.L. Fang, K. Ding, G.H. Li and W. Chen, J. Phys: Condens.
Matter 14, 12657 (2002).
[15] S. Wageh, Liu Shu-Man, Fang Tian You and Xu Xu-Rong, Journal of Luminescence
102-103, 768 (2003).
[16] Masanori Tanaka, Journal of Luminescence 100, 163 (2002).
[17] R. N. Bhargave, D. Gallagher, X. Hong and A. Nurmikko, Physical Review
Letters 72 (3), (1994).
[18] Ageeth A. Bol, Joke Ferwerda, Jaap A.Bergwerff and Andries Meijerink,
Journal of Luminescence 99, 325 (2002).
[19] Ping Yang, Mengkai Lu, Dong Xu, Duolong Yuan and Guangjun Zhou, Journal of
Luminescence 93, 101 (2001).
[20] Y. Nakaoka, Y. Nosaka, Langmuir 13, 708 (1997).
[21] T. Vossmeyer, L. Katsikas, M. Giersig, I.G. Popovic, K.Diesner, A.
Chemseddine, A. Eychmuller, H. Weller, J. Phys. Chem. 98, 7665 (1994).
[22] Chunming Jin, Jiaqi Yu, Lingdong Sun, Kai Dou, Shanggong Hou, Jialong Zhao
and Yimin Chen, Journal of Luminescence 66&67, 315 (1996).
[23] Wei Chen, Ramaswami Sammynaiken and Yining Huang, Journal of Applied Phys.
89 (2), 1120 (2001).
[24] L.P. Wang and G.Y. Hong, Materials Research Bulletin 35, 695 (2000).
[25] N.I. Kovtyukhova, E.V. Buzaneva, C.C. Waraksa, T.E. Mallouk, Materials
Science and Engineering B69-70, 411 (2000).
[26] Robert Vacassy, Stefan M. Scholz, Joydeep Dutta, Christopher John George
Plummer, Raymond Houriet and Heinrich Hofmann, J. Am. Ceram. Soc. 81 (10),
2669 (1998).
[27] B. Bhattacharjee, D. Ganguli, S. Chaudhuri, A.K. Pal, Thin Solid Films 422,
98 (2002).
[28] Wenbin Sang, Yongbiao Qian, Jiahua Min, Dongmei Li, Lingling Wang, Weimin
Shi, Liu Yinfeng, Solid State Communications 121, 475 (2002).
[29] J. C. Sanchez-Lopez, A. Justo and A. Fernandez, Langmuir 15, 7822 (1997).
[30] 廖世傑，工業材料 161, 159 (2000)。
[31] X. Peng, M. C. Schlamp, A. V. Kadavanich and A. P. Alivisatos, J. Am. Chem.
Soc. 119, 7019 (1997).
[32] A. R. Kortan, R. Hull, R. L. Opila, M.G. Bawendi, M. L. Steigerwald, P.
J.Carroll and L. E. Brus, J. Am. Chem. Soc. 112, 1327 (1990).
[33] Heesun Yang and Paul. H. Holloway, Applied Physics Letters, 82 (12), 1965
(2003).
[34] Lixin Cao, Jiahua Zhang, Shanling Ren and Shihua Huang, Applied Physics
Letters, 80(23), 4300 (2002).
[35] B.S. Bendre and Shailaja Mahamuni, J. Mater. Res., 19(3), (2004).
[36] Jinman Huang, Yi Yang, Shanhua Xue, Bai Yang, Shiyong Liu, Appl.Phys. Lett.
70 (18), (1997).
[37] 蘇勉增、吳世康，“發光材料”，第四卷，1~39頁。
[38] Wenxiu Que, Y. Zhou, Y. L. Lam, Y. C. Chan, and C. H. Kam, Applied Physics
Letters 73(19), 2727 (1998).
[39] B. Henderson and G.F. Imbuschr, “Optical Spectroscopy of Inorganic
Solids”,Clarendon Press. Oxford, (1989).
[40] S.M.Sze, “Physics of Semiconductor Devices”, Second Edition, John Wiley &
Sons, (1981).
[41] H.W. Leverenz,“Luminescence of Solids”,John Wiley & Sons, Inc., New York,
1950.
[42] Shigeo Shionoya, "PHOSPHOR HANDBOOK", CRC Press LLC, New York, U.S.A (1999).
[43] D.R. Vij and N. singh, "Luminescent and Related Properties of Ⅱ-Ⅵ
semiconductors", Nova Science Publishers (1998).
[44] Hua Yang, zichen Wang, Lizhu Song, Muyu Zhao, Yimin Chen, Kai Dou, Jiaqi Yu,
Li Wang, Materials Chemistry and Physics 47, 249 (1997).
[45] L.M. Gan, B. Liu, S. J. Chua, G. L. Loy, and G. Q. Xu, Langmuir 13, 6427
(1997).
[46] M. Ihara, T. Igarashi, T. Kusunoki, K. Ohno, J. Electrochem. Soc., 147(6),
2355 (2000).
[47] Yadong Li, Yi Ding, Yue Zhang, Yitai Qian, J. Physics and Chemistry of
Solids 60, 13 (1999).
[48] Kelly Sooklal, Brian S. Cullum, s. Michael Angel, and Catherine J. Murphy,
J. Phys. Chem. 100, 4551 (1996).
[49] 熊怡之, 碩士論文, 清華大學化學工程研究所, 1989年
[50] Jun Koike, Kazunobu Shimoe and Hideharu Ieki, Jpn. J. Appl. Phys. 32, 2337
(1993).
[51] R.A. Swalin.," Thermodynamics of Solids " 335.
[52] D. Dimova-Malinovska, N. Tzenov, M. Tzolov, L.Vassilev, Materials Science
and engineering B52, 59 (1998).
[53] S.R. Morrison, Sensors and Actuators 12, 425 (1987).
[54] G. Blasse and B.C Grabmaier, “Luminescent Materials”,Springer Verlag,
Berlin Heidelberg, Germany (1994).
[55] 劉如熹、紀喨勝,”紫外光發光二極體用螢光粉介紹”。
[56] R. C. Ropp,“Luminescence and solid state”, Elsevier Science Publishers, B.
V., The Netherlands（1991）
[57] 楊俊英著, “ 電子產業用螢光材料之調查”,p.7,工研院,1992.
[58] 林麗玉,“柰米硫化鋅與硫化鋅鎘螢光體微粒之製備、特性鑑定與發光特性研究”,
國立交通大學應用化學研究所碩士論文, 2000.
[59] Kamimura, A., Sugano, S., and Tanabe, Y., “Ligand Field Theory and Its
Application”,First Edition, Shokabo,pp.269-321in Japanese ,1969.
[60] G.Blassr and B.C.Grabmaier, “Luminescence Material”, 19, Springer,Berlin.
[61] D.L.Dexter, Chem. Phys.22 (6), 1063 (1954).
[62] B.Walter, Ann. Physik 36, 502, 518 (1889).
[63] P.D.Johnson and F.E. Williams, J. Chem. Phys.18, 1477 (1950).
[64] 魏碧玉、賴明雄，工業材料153期，113（民88年）
[65] 廖世傑，“奈米粉的合成”，工業材料161期,159 (2000)。
[66] 林景正、賴宏仁，工業材料153期，95（民88年）。
[67] 張力德，牟季美，「納米材料和納米結構」，科學出版社，北京（2001）。
[68] A.D.Yoffe,Adv.Phys.51,799（2002）.
[69] C.Weisbuch,H.Benisty,R.Houdré,J.Lumin.85,271（2000）.
[70] P.V.Kamat,J.Phys.Chem.B,106,7729（2002）.
[71] Y.Xia et al.,Adv.Mater.,12,693（2000）.
[72] Louis Brus, J. Phys. Chem. 90, 2555 (1986).
[73] R. Rossetti, R. Hull, J. M. Gibson, L. E. Brus, J. Chem. Phys. 83, 1406
(1985).
[74] W. D. Knight, K. Clemenger, W. A. deHeer, W. A. Saunders, M. Y. Chou, M. L.
Cohen, Phys. Rev. Lett. 52, 2141 (1984).
[75] L. E. Brus, J. Chem. Phys. 80, 4403 (1984).
[76] Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40(11), 939 (1982).
[77] The Physics of Low-Dimensional Semiconductor: An Introduction, John H.
Davies, Cambridge University press, New York, 1998.
[78] W. Chen, Z. Wang, Z. Lin, L. Lin, Appl. Phys. Lett. 70, 3172 (1997).
[78] Nanomaterials: Synthesis, Properties and Applications, A. S. Edelstein and
R.C. Cammarate, Institute of Physics publish, London, 1996.
[79] R. Jagannathan, S.P. Manoharan, R. P. Rao, R. L. Narayanan and N. Rajaram,
Bull. Electrochem. 4, 597 (1998).
[80] J. Ross MacDonald,“Impedance Spectroscopy - Emphasizing Solid　Materials
and Systems”, John Wiley & Sons, New Year (1987).
[81] K. Sooklal, B.S. Cullum, S.M. Angel, C.J. Muphpy, J. Phys. Chem. 100, 4551
(1996).
[82] K. Manzoor, S.R. Vadera, N. Kumar, T.R.N. Kutty, Materials Chemistry and
Physics 82,718 (2003).
[83] K. Vanheusden, W.L. Warren, C.H. Seager, D.K. Tallant, J.A. Voigt, and B.E.
Gnade, Journal of Apply Physics 79,7683 (1996).
[84] Seong-Ho Kim, Hung-Ho Moon, Jae-Gwan Park and Yoonho Kim, J. Mater. Res.
16(1), 192 (2001).
[85] G. Harkonen, M. Leppanen, E. Soininen, R. Tomqvist,Viljanen, J. Alloys and
Compounds 225, 552 (1995).