本論文主要探討應力對MOS結構中二氧化鉿氧化層薄膜特性的影響，而研究內容分成三個方向進行討論：一、應力對不同厚度之薄膜特性的影響。二、不同退火氣氛(氧氣/氮氣)以及退火時間下之應力效應。三、不同的退火方式(爐管和快速退火爐)下之應力效應。
由實驗結果可知，受應力作用的薄膜其結晶性皆比無應力要好，不因厚度差異、退火方式、退火氣氛或退火時間等而有所改變，但薄膜厚度較薄(12.7nm)時，應力效應對結晶性影響最顯著。
而由電性分析結果可得，應力造成薄膜介電常數值(k)提高以及等效氧化層厚度(EOT)降低，並且有效減少平帶電壓位移，但此效應會隨著薄膜厚度和退火條件而有所差別。

In this thesis, the stress effect of HfO2 insulating layer within the MOS structure has been discussed. The stress effects on HfO2 as functions of film thicknesses, anneal methods (furnace anneal or rapid thermal process), anneal atmosphere (oxygen gas or nitrogen gas) and anneal times were investigated.
The physical analysis results indicated that the crystallization characteristics of HfO2 were enhanced by stress, regardless of the variations of film thicknesses, annealing methods, annealing atmosphere and annealing times. Additionally, the stress effect on the crystallization of was most significant in thiner film (12.7nm).
The electrical analysis results showed that the dielectric constant (k) of HfO2 was improved by stress, leading to a lower equivalent oxide thickness (EOT). The flat band voltage shift of MOS capacitors were suppressed by stress, but these stress effects strongly depended on film thickness and annealing conditions.

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