| 研究生: |
吳宏偉 Wu, Hung-Wei |
|---|---|
| 論文名稱: |
薄膜微帶線與介間物質在微波被動元件之研究 Study of Thin Film Microstrip Line and Metamaterial on Microwave Passive Devices |
| 指導教授: |
蘇炎坤
Su, Yan-Kuin 翁敏航 Weng, Min-Hang |
| 學位類別: |
博士 Doctor |
| 系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年: | 2007 |
| 畢業學年度: | 95 |
| 語文別: | 英文 |
| 論文頁數: | 149 |
| 中文關鍵詞: | 薄膜微帶線 、低介電 、微波量測 、介間物質 |
| 外文關鍵詞: | Low K, thin film microstrip line, metamaterial, microwave measurement |
| 相關次數: | 點閱:178 下載:13 |
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本論文主要分成三大部分:(a) 低介電薄膜微帶線之製備;(b) 低介電材料之微波量測;(c) 介間物質與多頻帶微波濾波元件之設計。
(a) 低介電薄膜微帶線之製備與研究
在第一部份中,本論文提出一種製作於低介電材料上之薄膜微帶線,並探討其微波特性與平均功率承載能力(Average Power Handling Capability, APHC)。該薄膜微帶線之介電層係使用低介電常數(Low K)材料-Polyimide。在製程上,我們使用低成本的標準矽晶(Standard Low Resistivity Silicon, LRS, )作為基板;將Polyimide旋鍍約20µm至表面具有2µm鋁金屬之LRS上,再使用sputter濺鍍約2µm之鋁金屬至Polyimide上。成功製作出線寬為60µm,長度為2000µm之薄膜微帶線。在損失機制與平均功率承載能力的分析上,我們將探討在1-50GHz間,外加dc-Bias的變化對於薄膜傳輸線之有效介電常數、損耗正切與平均功率承載能力的影響。該薄膜微帶線可廣泛應用於射頻積體電路(Radio Frequency Integrated Circuit, RFIC)中。
(b) 低介電材料之微波量測
在第二部份中,本論文使用有限接地面之微帶線結構(Microstrip line)作為量測該低介電材料微波特性之方法。藉由高頻on-wafer與傳輸線結構之高頻量測技術,可準確地確認該低介電材料在無偏壓與偏壓情況下之微波特性與最大功率承載能力。特別是在加入偏壓下之研究,其可有效評估RF SoC的可能性。
(c) 介間物質與多頻帶微波濾波元件之設計。
在第三部份中,本論文提出介間物質(metamaterial)結構,其為一種能夠產生負導磁係數或負介電係數之自然或人造物質,可用於改變特定電磁波的傳播現象。介間物質結構應用在微波元件上是目前應用於無線通訊射頻前端中極具前瞻性的技術之一。本論文以互補式分離式環形共振器(Complementary Split Ring Resonator,CSRR)結構為主,設計並應用該CSRR於微波濾波元件上,並評估製作於矽基板上之可行性。另外,本論文亦使用步階式阻抗共振器設計具有多頻帶特性之濾波元件,以符合無線區域網路之規格。
最後,本論文亦對系統晶片整合技術(SoC)提出一些建議與未來工作方向。
This dissertation divides into three parts: (a) Preparation of thin film microstrip line using low K dielectrics; (b) microwave measurements of the low K dielectric materials and (c) design of filter with metamaterial and with multi-band performance.
(a) Preparation of thin film microstrip line using low K dielectrics
In the first part of the dissertation, we propose a detailed fabricating process and characterization of thin film microstrip line (TFML) on low K polyimide. By incorporating a spin-on dielectric polyimide and sputtering of aluminum, the TFML is fabricated on low cost low resistivity silicon (LRS) substrate ( ), the TFML with a thickness of 20μm polyimide dielectric layer presents attenuation losses of 0.385 dB/mm at 25 GHz and 0.438 dB/mm at 50 GHz. Effective dielectric constants, loss tangent and average power handling capability (APHC) of TFML on polyimide are carefully investigated and discussed. Additionally, the microwave characteristics of the dc-biased TFML were studied. This characterization of the TFML can be extensively applied on the interconnection of radio frequency integrated circuit (RFIC).
(b) Microwave measurements of the Low K dielectric materials
In the second part of the dissertation, we present a novel finite ground microstrip line to develop and to measure the microwave properties of TFML. By using the high frequency on-wafer and transmission line measurement technique, the low K dielectric can be accurately determined in the microwave properties and APHC under the condition for without dc-bias and with dc-bias. Especially in the case with dc-bias that can effectively evaluate the possibility of RF SoC.
(c) Filter design with metamaterial and with multi-band performance
In the third part of the dissertation, we discuss the propagation characteristics of single complementary split-ring resonator (CSRR) in planar transmission media. We also applied the periodic CSRRs to suppress the harmonics of the conventional dual-mode ring bandpass filter (BPF) by using the propagation characteristics of the periodic CSRRs. Additionally, we present a dual-band filter using stepped impedance resonator (SIR). The BPF has good dual-passband performances at 2.4 / 5.2 GHz and high isolation between the two passbands. The dual-band BPF has a smaller area and lower insertion loss in comparison of previous works.
Finally, some suggestions are made in the future work on technology for system on chip (SoC).
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