平面顯示器已成為落實智慧生活重要的人機互動體驗介面，在眾多種類的顯示器中，液晶顯示器、主動式矩陣有機發光二極體顯示器為目前主流技術，而微米/次毫米發光二極體則逐漸崛起。由於氫化非晶矽薄膜電晶體具有低生產成本及成熟的製造過程，因此廣泛地作為液晶顯示器之基板，然而，低電子遷移率使其無法應用在更高解析度之顯示器上。近年來，為了使液晶顯示器擁有高動態範圍及純黑畫面，採用區域調光之全陣列次毫米發光二極體背光已受到高度重視。此外，相較於液晶顯示器及主動式矩陣有機發光二極體顯示器，次毫米發光二極體作為自發光顯示器之發光源可提供較廣視角、較高畫素密度、亮度及更長使用壽命等優點。
針對上述議題，本論文提出三個基於氫化非晶矽薄膜電晶體之閘極驅動電路以提供中低階顯示器具有高解析度畫面，以及兩個次毫米發光二極體驅動電路來降低現有畫素補償電路之功耗，並透過量測數據及元件特性分析來評估所提出電路之有效性。第一個電路為針對閘極驅動電路所提出之低漏電流穩壓架構來降低穩壓電晶體在輸出階段漏電的問題，以避免輸出波形之上升/下降時間的增加。第二個電路則為採用預抬升方式增加驅動電晶體之閘極電壓來改善氫化非晶矽薄膜電晶體電子遷移率不足問題，量測結果說明所提出的方式在不增加驅動電晶體尺寸的情況下可有效地增強其驅動能力，藉此加速電路對掃描線上負載之充放電速度，與現行電路相比其輸出之掃描上升及下降時間可以分別減少45.21%及32.04%，並且透過雙倍負載、高工作頻率及長時間操作等量測驗證提出電路之可靠性。為了更進一步驗證電容耦合方法在閘極驅動電路驅動能力改善上的功效，本論文針對該方法進行了全面的分析，並提出第三個閘極驅動電路，該電路不僅能提升驅動電晶體之閘極端電壓，並同時改善因寄生電容產生時脈饋入而造成非輸出級之驅動電晶體漏電使得時脈訊號延遲的問題，模擬結果證明，相較於第二個電路，其漏電流可以減少45.45%來改善時脈訊號上升時間延遲的問題。第四個電路則是作為液晶顯示器背光之主動式次毫米發光二極體驅動電路，該電路能在產生一樣的驅動電流及不更改訊號線之電壓準位的情況下，降低開關電晶體之汲-源極電壓，藉此降低背光功耗，並且同時補償薄膜電晶體臨界電壓及電壓源電壓變異。與一般驅動電路相比，所提出電路透過減少每個背光源單元之跨壓來降低背光所需之功耗16.67%。最後一個電路則為使用薄膜電晶體匹配補償來去除驅動電流路徑上開關電晶體之次毫米發光二極體畫素電路，並在此詳細分析了現有採用二極體連接及射極隨耦器等架構之畫素補償電路之功率消耗，模擬結果證明相較於現有補償電路，所提出之電路能在較小的跨壓下達到相同的驅動電流，藉此達到降低13%之功耗，此電路也導入一5.23吋、解析度160 × 135、畫面更新頻率120赫茲之面板並點亮，量測結果證明該電路可使面板在255灰階下擁有高畫面均勻性，在亮度1620尼特的白畫面下面板之功率消耗為7.18瓦特。

Flat panel displays (FPDs) have become an important human-machine interface to realize smart living. Among the various types of FPDs, liquid-crystal displays (LCDs) and active-matrix organic light-emitting diode (AMOLED) displays are dominant technologies, while micro/mini light-emitting diodes (LEDs) are emerging. Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are extensively used as backplane for the LCDs because of their low fabrication cost and mature processes. However, the low field-effect mobility of the a-Si:H TFT limits its applications for high-resolution displays. Recently, to make the LCD producing a high dynamic range image and a true black image, the mini-LED backlight with full-array and local dimming has attracted much attention. Furthermore, as a light source for emissive displays, the AMLED displays exhibit wider viewing angles, higher pixel density, higher brightness, and longer lifetime than the LCD and the AMOLED displays.
This dissertation presents three a-Si:H TFT gate driver circuits enabling middle-end and low-end displays with high resolution and two mini-LED driving circuits to reduce the power consumption of the existing compensating circuits. To evaluate the feasibility of the proposed circuits, the electrical characteristics of the TFTs are measured and analyzed in detail. The first gate driver circuit reports a low-leakage pull-down structure that reduces the leakage of the pull-down TFTs to avoid the increase of the rising time and the falling time of the output waveform. The second gate driver utilizes a pre-bootstrapping method to increase the gate voltage of the driving TFT, improving the insufficient field-effect mobility of the a-Si:H TFT. The measured results reveal that the proposed method effectively enhances the driving capability of the driving TFT without increasing its size, thereby accelerating the charging and discharging speed to the scan line. The rising and the falling time of the output waveform are 45.21% and 32.04% shorter than those of the conventional circuit. The reliability of the proposed circuit is verified through the experiments of a doubling loading, a high operating frequency, and long-term operation. To further confirm the effectiveness of the capacitive coupling structure for increasing the driving capability of the gate driver circuit, a thorough analysis is conducted. Based on the analysis, the third gate driver circuit, which adopts the capacitive coupling method and improves the delay of clock signals, is proposed. By suppressing the clock feed-through induced by parasitic capacitors, the leakage current of the non-output stages of the driving TFTs can be reduced by 45.45%; thus, the resistance-capacitance delay of the clock signal can be avoided. The simulated results show that the leakage current and the rising time of the output waveform of the proposed circuit are reduced than those of the second circuit. The fourth is a driving circuit for realizing an AM mini-LED backlit LCD. In the same driving current of the mini-LED, the proposed circuit reduces the required VDS of the switching TFT without adjusting the voltage level of the scan signals. The circuit also compensates for the VTH variation of the TFT and VSS current-resistance rise. Compared to the common driving circuit, the proposed circuit reduces 16.67% power consumption of the backlight by reducing the total voltage across each backlight unit. The last is a mini-LED pixel circuit using TFT-matching compensation to eliminate the switching TFTs in the driving current path. Herein, the power consumption of the common compensating pixel circuits, including diode-connection and source-follower, are analyzed. Compared to the existing circuit, the proposed circuit generates the same driving current for the mini-LED with less voltage across the pixel. The power consumption is, thus, reduced by 13%. A 5.23-inch, 160×135, and 120-Hz panel implementing the proposed circuit is fabricated and lit up. The panel can produce a uniform image at a gray level of 255. For the white image with a brightness of 1620 cd/m2, the power consumption of the display is 7.18 W.

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