研究生: |
簡秀真 Jian, Shiou-Jen |
---|---|
論文名稱: |
氧化鋅薄膜特性及其在液體感測器上之應用 Characterization of ZnO Thin Film and Its Applications on Liquid Sensors |
指導教授: |
朱聖緣
Chu, Sheng-Yuan |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
論文出版年: | 2003 |
畢業學年度: | 91 |
語文別: | 中文 |
論文頁數: | 79 |
中文關鍵詞: | 氧化鋅 、液體感測器 、拉福波 |
外文關鍵詞: | Znic Oxide, Love wave, liquid sensor |
相關次數: | 點閱:64 下載:3 |
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本論文主要是以反應式射頻磁控濺鍍法,研究在石英(ST-cut)上成長(002)軸向的氧化鋅薄膜,我們設計不同的製程參數:改變基板溫度、控制氬氣與氧氣的比例、腔體內壓力及濺鍍功率,探討對薄膜特性的影響。利用X光繞射儀(X-ray diffraction)、掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)檢測薄膜晶體的結構、內應力、與薄膜表面粗糙度。
我們在低基板溫度與低濺鍍功率的環境下,可成長單一C軸軸向之氧化鋅薄膜以適用於拉福波感測器。但是在64° 鈮酸鋰(LiNbO3)上成長氧化鋅薄膜時,因為其本身的波傳模式為洩漏波形式,利用本文所求得之最佳濺鍍參數,感測特性並不明顯。
另外,成長不同厚度的氧化鋅薄膜在石英基板上以製成拉福波元件,研究不同膜厚對元件波速、機電耦合常數和頻率溫度係數的影響,當波長為40mm,膜厚為1.8mm時可得到最大的機電耦合常數;膜厚為2.6mm時,頻率溫度係數接近於0。為了提高拉福波感測器的敏感度,研究濺鍍時不同基板溫度對元件黏滯係數敏感性之影響:成長薄膜在不加溫的基板上比在加溫基板上可得到較高敏感性的元件,波長為40mm,膜厚為1.8mm時,敏感度最高,遠大於二氧化矽與石英基板結構的拉福波感測器。若以氧化鋅薄膜應用在共振濾波器上,其薄膜特性要求完全不同於在感測器上的應用,經由調變不同製程參數,可分別得到適用於濾波器和感測器的氧化鋅薄膜。
Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the ST-cut quartz substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio, the chamber pressure and RF power. Crystalline structures, stress and surface roughness characteristics of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement.
The preferred c-axis orientation of ZnO films can be grown at low RF power and low substrate temperature. And we can grow the film on the substrate (ZnO/IDT/Quartz) as a Love wave sensor. But when we grow the ZnO films on the 64° LiNbO3 substrate, it’s not useful as a Love wave sensor. The reason is that the wave transmission of 64° LiNbO3 is Leaky wave.
An experimental study of Love wave devices based on ZnO/90° rotated ST-cut quartz with different thickness of ZnO films is also presented. Phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency have been studied as a function of layer thickness. The maximum electromechanical coupling coefficient is obtained for 1.8mm ZnO film and near zero temperature coefficient of frequency is obtained for 2.6mm ZnO film for a wavelength of 40mm, respectively. In order to fabricate sensors with higher sensitivity, the effect of substrate temperature on the sensitivity of viscosity were investigated. The Love wave sensor has higher sensitivity for ZnO films sputtered on unheated substrate than that of on heated substrate. The sensitivity of the ZnO/Quartz structure with film thickness of 1.8mm for a wavelength of 40mm is much larger than SiO2/Quartz structure. The required characteristics of ZnO film for resonator filter and sensor applications are contrariwise. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.
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