隨著5G時代的來臨，氮化鎵具有能夠滿足高頻及高功率需求的潛力，然而在寬能隙半導體材料的應用上仍存在許多問題需要克服，在氮化鎵元件的設計上也有許多的影響因素需要釐清。
本研究使用SILVACO公司之TCAD模擬軟體討論氮化鋁鎵/氮化鎵的壓電特性，透過改變氮化矽保護層之應力參數，氮化鎵高載子遷移率電晶體的二維電子氣濃度在壓應力作用下有所下降，亦討論二維電洞造成崩潰電壓下降的機制。以OrCAD PSPICE 進行電路的暫態模擬，針對氮化鎵元件的逆向恢復特性建立簡單的二極體模型，以便後續完整HEMT元件的建立以及電路設計上的應用，並透過連接不同的電阻與電容的等效電路以討論寄生特性對於逆向恢復的影響。最後製作耗盡型(D-mode)氮化鎵高載子遷移率電晶體(HEMT)以驗證模型，並在節狗上改變閘極至汲極距離，測量氮化鋁鎵/氮化鎵HEMT之電性，在LGD=5、10、15μm時的Ron分別為12.9、15.04以及16.48 mΩ·cm2，並且當LGD=10μm時，在場效板結構下因分散電場而得到最高的崩潰電壓。

As the demand of reducing energy loss and high frequency operating increasing, Gallium Nitride is a material which has potential to be applied. However, there are still lots of issue need to be overcome. Moreover, there are many characteristics should be considered while designing the GaN device.
GaN is a kind of piezoelectric material, so the effects of tensile/compressive stress induced by silicon nitride (SiNx) passivation need to be discussed. In order to investigate the influence of different stress-induced SiNx on GaN, SILVACO TCAD tool was used to simulate. It comes out that the compressive stress induced will increase the channel resistance because of the 2DHG generation. The mechanism of breakdown resulting from 2DHG also be discussed. In addition, OrCAD PSPICE was used to simulate the transient analysis. This study builds a simple GaN diode model, connects with different resistor or capacitor and applies in a testing circuit to analysis the reverse recovery characteristic. Finally, D-mode GaN MIS-HEMTs were made to verify the physical model. We also designed different kinds of Gate-to-Drain length in this study. The Ron of LGD=5, 10 and 15μm were 12.9, 15.04 and 16.48 mΩ·cm2 respectively. The highest breakdown voltage is at LGD=10μm because of the field plate.

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