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研究生：	劉建志 Liu, Chien-Chih
論文名稱：	高亮度發光二極體之設計與製作 Design and Fabrication of High Brightness LEDs
指導教授：	王永和 Wang, Yeong-Her 洪茂峰 Houng, Mau-Phon
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	英文
論文頁數：	125
中文關鍵詞：	覆晶、選擇性高電阻區、電流分佈層、發光二極體
外文關鍵詞：	flip-chip, selective high resistivity region, Current spreadinglayer, LED
相關次數：	點閱：62 下載：5
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最近，由於磊晶成長技術突破，可得到優良品質的結晶，因此發光亮度急速提升，已被用來生產高亮度的發光二極體。雖然內部量子效率已可達99% 以上，但外部量子效率還是很低，以藍光而言甚至不到10%，電流分佈與光取出是提高外部量子效率重要技術。本論文將設計與製作電流分佈層以達到發光二極體電流均勻分佈及鍍一層折射率匹配之保護層以增加光取出，進而增加發光二極體發光效率。
本論文，設計一些新的發光二極體製作方法以提高發光效率，（一）氮化鈦(TiN)擁有低片電阻、不錯的穿透率、折射率匹配、堅硬物理特性與穩定的化學特性，我們將氮化鈦鍍在磷化鋁銦（AlGaInP）發光二極體上當電流分佈層，增加二極體電流均勻分佈能力，以提高發光亮度。（二）利用p型氮化鎵(GaN)活化時，有鎳金屬催化可降低退火溫度的特性，在GaN發光二極體p型電極下方不鍍鎳金屬當催化劑，而在二極體其他面積鍍上鎳金屬當催化劑，在相同溫度退火可產生不同電洞濃度，因而產生不同電阻率，在二極體p型電極下方因無鎳金屬當催化劑，此區電阻率比其他區域大，利用此觀念設計選擇性高電阻區(SHRR)在氮化鎵發光二極體電極下方當阻擋層，避免電流流向這個區域（此區光被電極阻擋而反射被吸收），使電流流向有效發光區域，以提高發光亮度。（三）目前高功率氮化鎵二極體大多以覆晶技術製作，此研究建立無鉛銲錫覆晶技術，將雷射以銦化金(Au-In) 銲錫覆晶在矽基板上評估覆晶技術，以銲錫微觀結構及雷射特性來評估覆晶製作流程，以建立覆晶技術應用於高功率氮化鎵二極體製作。
結果顯示，（一）在大電流工作下，氮化鈦電流分佈層能使電流均勻分佈，在100mA工作電流下光輸出強度較無氮化鈦電流分佈層增加9%。而且光輸出無飽和現像，顯示其散熱能力很好。另一方面，大面積發光二極體（2mm × 2mm）在100mA工作電流下，雖然發光二極體面積增加四倍，無氮化鈦電流分佈層光輸出強度只增加4%，而有透明導電層LED，因透明導電層將電流擴散，其光輸出強度可增加20%，氮化鈦電流分佈層在大面積二極體、大電流操作下，可明顯提升光輸出強度，有利於高功率二極體製作。
（二）有選擇性高電阻區當阻擋層之發光二極體，能有效阻擋電流流向電極下方之作用區，使電流流向有效發光區域，在20mA工作電流下，光輸出強度增加15%，其大小與電流因阻擋層作用，而流向可用區域大小比例吻合。選擇性高電阻區當阻擋層之發光二極體，以簡單微影製程技術即可完成，取代傳統阻擋層以蝕刻方式，蝕刻金屬電極位置下方p-GaN，並利用再成長方式成長絕緣層，大幅降低製程複雜性以提高元件良率。
（三）我們成功建立銦化金無鉛銲錫覆晶技術，在200oC回火可得最佳銲錫微觀結構及雷射特性，為了了解環境應力與元件操作時對銲料層所造成的影響，接合後的雷射更進一步的進行500個循環的熱衝擊測試以及高溫儲存測試，測試後雷射的特性並沒有驟然的退化跡象且聯結的機械強度幾乎沒改變，代表著銦化金銲料具有不錯的抗熱疲勞特性以及熱穩定性。將利用此技術於高功率氮化鎵二極體製作。

Recently, the high brightness light emitting diodes (LEDs) have been obtained because of the growth of epitaxy technology. However, LED light output is still low compared to conventional light sources for high-flux lighting systems, making necessary further improvements to LED light-output efficiency. Although, the internal quantum efficiency is up to 99% for a good quality crystalline, it has only 10% external quantum efficiency of blue and green LED has been announced. Current spreading and light extraction are of major importance for obtaining a high external quantum efficiency LED. So, the purpose of this thesis is design and fabrication of current spreading to improve the external quantum efficiency.
In this thesis, we design some methods of fabrication-process to improve light-output. First, thin titanium nitride (TiN) films with low sheet resistance, excellent transparency, refractive-index-matching, physical toughness and chemical stability are deposited on AlGaInP light emitting diodes (LEDs) as current spreading layer to improve light extraction from the LED surface. Secondly, The resistivity of p-type GaN with-Ni catalytic activation is smaller than without-Ni catalytic activation. We utilize this resistivity difference to modify current flow. A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN LED as a blocking layer to make current spreading uniformly. Finally, the flip-chip LED (FCLED) can improve performance in lifetime tests and output power compared to top-emitting power GaN-based LEDs. Flip-chip bonding is an important technique for the fabrication of GaN-based high power LEDs. We developed a fluxless bonding process to manufacture In-Au microjoint between laser diode and silicon substrate to optimal fabrication-process prepared for GaN based high power LED fabrication.
At high injection current, the TiN films spread the current over a larger area of device and improve distribution of light emission. And light-output power at 100mA for the LED with TiN film is 9% higher than that without TiN film. Comparing the 1x1mm with the 2x2mm devices represents a four times increase in area. Without TiN, light output increases around 4% for this four times area increase. With TiN, light output increases by around 20% for the same area increase. The results demonstrate that a TiN thin film contact layer on an AlGaInP LED can spread LED injection current over a larger area of the device and improve distribution of light emission at high injection currents. Therefore, current crowding effects are reduced and device light output is significantly improved.
An approximately 15% increase in light output power has been achieved in GaN LEDs with SHRR structure. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. With SHRR, the area under the p-pad metal electrode is selectively given a higher resistance, thus reducing injection current, light generation and light loss under the contact. The current normally passing through the SHRR region is instead distributed over the visible and therefore useful area of the device. This results in significant increase of light output power and luminous efficiency.
Additionally, we have successful developed a fluxless bonding process to manufacture In-Au microjoint between laser diode and silicon substrate, and study the interface properties and microstructure of In-Au layer. From these results, we can find that the optimal bonding temperature is 200 oC for our bonding process. To verify the thermal stability, bonded samples are tested by thermal shock test and high temperature storage. All well bonded LDs show no abrupt degradation from I-V and L-I plots and the mechanical strength is as almost the same as pre-tested. This shows that indium has decent thermal fatigue property and thermal stability. The optimal process of flip-chip bonding process will apply to high power GaN-based LED fabrication.

Contents	vi
Table captions	viii
Figure captions	ix
Chapter 1 Introduction	1
1-1 Overview	1
2 Thesis organization	4
Chapter 2 Background theory for LEDs	6
1 Introduction	6
1.1 Introduction	6
1.2 High external quantum efficiency structure	6
2 Current spreading structures	8
2.1 Theory of current spreading	8
2.2 Current spreading structures for AlGaInP LEDs	9
2.3 Current spreading structures for GaN LEDs	10
3 Current-blocking structures	12
3.1 Current-blocking structure for AlGaInP LEDs	13
3.2 Current-blocking structure for GaN-based LEDs	13
4 Light extraction	13
4.1 Introduction	13
4.2 Critical angle loss	14
4.3 Fresnel loss	15
4.4 How to improve the extraction efficiency ηopt	16
5 The increase of hole concentration in p-type GaN	19
Chapter 3 Improved light-output performance of AlGaInP LEDs using TiN thin films as current spreading layer	21
1 Introduction	21
2 Fundamental characteristics of TiN	22
3 Experiment	23
3.1 Pre-processing cleaning	23
3.2 Sputtering condition	24
3.3 Fabrication of LED chip with and without TiN transparent conductive layer	24
4 Experimental results and discussions	25
4.1 Deposited condition selection	25
4.2 Analysis of TiN/GaP interface	27
4.3 Characteristics of TiN thin films	27
4.4 LED performance	29
4 Summary	31
Chapter 4 Improved light-output performance of GaN LEDs by selective region activation	33
1 Introduction	33
2 The background theory for selective area activation	34
3 Experiment	36
3.1 Wafer cleaning	36
3.2 Mesa etching	37
3.3 Thermal annealing to activate Mg-doped GaN films with Ni catalyst	37
3.4 Transparent conductive layer and ohmic contact fabrication	37
4 Experimental results and discussions	38
4.1 The effect of Ni activation for the hole concentration and resistivity of p-GaN	38
4.2 LED performance	39
4-5 Summary	43
Chapter 5 Flip-chip bonding prepared for high power GaN based LEDs	44
1 Introduction	44
2 Experiment	46
3 Experimental results and discussions	47
3.1 Microstructure of the solder joint	47
3.2 Optimization of bonding temperature	49
3.3 Solder reliability by thermal shock test and high temperature storage	49
4 Summary	51
Chapter 6 Conclusion and future works	53
1 Conclusion	53
2 Future works	54
References:	56
Publication List	124
Vita	125
                                    

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