自從發現石墨烯(graphene)以來，石墨烯電晶體立刻成為目前電子領域中最為熱門的研究之一。石墨烯本身具有極高的電子遷移率，許多研究人員希望能夠取代矽半導體的材料，以石墨烯電晶體取代現有的電晶體，將會大幅提升電子元件的反應速度，且石墨烯具有卓越的機械特性。本研究是利用酒精氣相化學沉積法以鎳箔製備石墨烯，作為場效電晶體的通道部分，並討論石墨烯電晶體之特性。
實驗中製作出不同的各種通道長度、寬度並討論其尺寸效應，爐管成長二氧化矽當作介電層，採用背閘極(bottom gate)的方式製作電晶體。利用拉曼光學系統觀察石墨烯成長的層數，使用電子型場發射掃描式電子顯微鏡(Scanning Electron Microscope, SEM)觀察石墨烯的表面形貌等，接著取得由代工生成之銅箔成長少層石墨烯，以相同條件製程電晶體後將其與鎳薄成長之石墨烯做比較觀察其電性之區別，最後研究如何利用矽奈米線製作出可以將電晶體定位的石墨烯奈米帶電晶體。

Since the discovery of graphene , graphene transistors immediately become one of the most popular studies in the field of electronics. Graphene has a very high electron mobility and many researchers hope to replace the silicon semiconductor materials. If the graphene transistor can be replace to the existing transistors , it can be improve the speed of response of the electronic components and graphene has excellent mechanical properties can be used in flexible device. It will replace to organic transistor one day.

This study use chemical vapor deposition method to prepare graphene by nickel foil and the carbon source gas is alcohol. We use the grapheme as a channel material of MOS FET and discuss the characteristics of the graphene transistor.

In th experiment, we produce different channel length , width and discuss the size effect. We use furnace tube to growth silicon dioxide as the dielectric layer and make transistors using back gate method. Using Raman optical system to observe the growth of graphene layers and e-field emission scanning electron microscope observe the surface morphology of the graphene.

Then growth few-layer graphene by copper foil by the foundry. We use the same process to made a transistor and compared with nickel foil growth graphene. At the last we study used silicon nanowire to made a graphene nano ribbon transistors which can be positioned

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