研究生: |
林永哲 Lin, Yong-Zhe |
---|---|
論文名稱: |
氧化銦鎵非揮發性電阻式記憶體之製作與研究 Fabrication and Investigation of InxGa1-xO Insulator for Non-volatile RRAM |
指導教授: |
張守進
Chang, Shoou-Jinn |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
論文出版年: | 2019 |
畢業學年度: | 107 |
語文別: | 英文 |
論文頁數: | 127 |
中文關鍵詞: | 非揮發性電阻式記憶體 、氧化銦鎵 、氧化銦 、氧化鎵 |
外文關鍵詞: | non-volatile RRAM, InxGa1-xO, In2O3, Ga2O3 |
相關次數: | 點閱:144 下載:20 |
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氧化銦鎵非揮發性電阻式記憶體之製作與研究
研究生:林永哲* 指導教授:張守進**
國立成功大學微電子工程研究所
摘要
本論文中,以氧化銦鎵作為非揮發性電阻式隨機存取記憶體的氧化層,主要是因為銦原子及鎵原子時常用來作為電晶體、感測器及太陽能電池的材料,且能經過銦鎵比的調變,改變其電性。
首先,我們探討在室溫下以InxGa1-xO作為電阻轉換層搭配白金、鈦和鋁作為上電極、白金作為下電極之電阻式記憶體的製備方法與其電特性。因為此三種金屬電極有不同的化學性質,因此我們以穿透式電子顯微鏡(TEM)及能量色散X射線譜(EDS)分析上電極與電阻轉換層的介面,確認此介面對於電阻式記憶體的電性影響,再分析三種上電極下,不同銦鎵比對於電阻式記憶體的電性影響。結果顯示製備完成的元件,有著雙極性的直流操作下,高低阻態轉換超過100次,並在室溫、100毫伏讀取電壓下,保持高低阻態各10000秒的穩定記憶能力。
另一部分,本論文針對上述記憶體中表現最好的Al/Ga2O3/Pt作改善,我們通過增加射頻磁控濺鍍製程時的氧分壓,達到下降電阻轉換層之氧空缺含量的目的。發現經由適當的減少氧空缺,將得到更穩定的電阻轉換特性,在雙極性的直流操作下,能夠高低阻態轉換超過2000次,並在室溫、100毫伏讀取電壓下,保持高低阻態各10000秒的穩定記憶特性。
最後我們研究以鋁為上電極、白金作為下電極,從靠近下電極往上電極分別為Ga2O3、In0.1Ga0.9O、In0.4Ga0.6O、In0.9Ga0.1O以及In2O3之五層漸變式二元氧化物電阻式記憶體,發現藉由氧化層漸變,電阻轉換將因為遷移率梯度和氧空缺濃度梯度而更輕易達成,得到更小的操作電壓以及穩定的阻值,意味著不只電極以及電阻轉換層材料,有著梯度漸變氧化層結構也是改善記憶體特性的重要方法之一。
關鍵字:非揮發性電阻式記憶體、氧化銦鎵、氧化銦、氧化鎵
作者*
指導教授**
Fabrication and Investigation of
InxGa1-xO Insulator for Non-volatile RRAM
Yong-Zhe Lin* Shoou-Jinn Chang**
Institute of Microelectronic &
Department of Electrical Engineering
National Cheng Kung University
Abstract
In this thesis, InxGa1-xO is used as the resistive switching layer of non-volatile random-access memory. This is because indium atoms and gallium atoms are always used as the materials of transistors, sensors and solar cells, and electrical property can be modulated by changing the ratio of indium atoms to gallium atoms.
First, Pt, Ti and Al are used as the top electrode and Pt is used as bottom electrode. We investigated the manufacturing process and electrical property of the RRAM devices. Because the three top electrodes has different chemical properties, transmission electron microscope (TEM) and energy-dispersive X-ray spectroscopy (EDS) are used to analyze the interface of the top electrode and the resistive switching layer and confirm the impact of the top electrode on the electrical properties. Moreover, we research Pt/InxGa1-xO/Pt RRAM, Ti/InxGa1-xO/Pt RRAM and Al/InxGa1-xO/Pt RRAM and investigate the impact of the In/Ga ratio on the electrical properties of the RRAM devices. As the results demonstrate, at room temperature, the fabricated devices can switch over 100 times and maintain high resistance state (HRS) and low resistance state (LRS) for 10000 seconds respectively in the bipolar switching mode with 100mV reading voltage.
Then, Al/Ga2O3/Pt RRAM is improved specially because its best performance among all the devices. The oxygen vacancies are diminished by increasing the oxygen partial pressure of RF sputtering system. As the results demonstrate, the resistive switching performance will be better if the oxygen vacancies are diminished appropriately. At room temperature, the Al/Ga2O3/Pt RRAM device can switch over 2000 times and maintain high resistance state and low resistance state for 10000 seconds respectively in the bipolar switching mode with 100mV reading voltage.
Finally, we use Al as the top electrode, Pt as the bottom electrode and from the bottom electrode to the top electrode, Ga2O3, In0.1Ga0.9O, In0.4Ga0.6O, In0.9Ga0.1O and In2O3 as the resistive switching layer to fabricate the penta-layer gradual binary oxide RRAM (Gradual RRAM). We find that the resistive switching performance is improved due to the gradient of the mobility and concentration gradient of the oxygen vacancies. It means that not only the electrode and the material of the resistive switching layer have impact on the performance of RRAM but also the structure of gradual binary oxide is one of the methods to improve the performance of RRAM.
Key words: non-volatile RRAM, InxGa1-xO, In2O3, Ga2O3
Author*
Advisors**
Chapter 1 Introduction
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