本研究在研究中，我們採用了兩步法來促進鈣鈦礦薄膜的生長。首先，我們利用旋轉塗佈法製備(FAPbCl₃)前驅薄膜，然後通過化學氣相沉積法(CVD)將MACl與FACL粉末分開放置在石英舟上，使其與前驅薄膜反應形成鈣鈦礦薄膜。研究分為三個部分，即(A)、(B)、(C)。在(A)部分中，我們選擇在不同溫度的烤盤上退火形成(FAPbCl₃)前驅薄膜，接著把CVD製程溫度設定在50度情況下，利用反應物MACl與FACL粉末將前驅物反應形成鈣鈦礦薄膜。經過實驗我們發現前驅薄膜在40度退火後接著放進CVD經過50度且反應時間185min時，薄膜表面的孔洞率較其他反應時間下有最低的孔洞率，證明低溫製程能獲得最佳的薄膜品質。在(B)部分，我們改變前驅溶液內FACL的比例，比較不同濃度的前驅薄膜是否可以生長出更平整、更緻密的鈣鈦礦薄膜，並使其更適合應用於製備鈣鈦礦發光二極體。接著把生長出最平整的FAXMA1-XPbCl3鈣鈦礦製成元件並量測其電性表現，並分析濃度對元件電性表現的影響。最後，在(C)部分，我們將電洞傳輸層改為NiOx上堆疊一層Poly(9-vinylcarbazole)(PVK)，並且重複(B)部分的所有實驗步驟。通過這一系列的研究和優化，我們發現鈣鈦礦薄膜的品質有明顯的提升，為其在發光二極體中的應用奠定了良好的基礎。

In this study, a two-step method was developed to promote the growth of perovskite thin films. First, formamidinium lead chloride (FAPbCl3) precursor thin films were prepared via spin-coating. Subsequently, methylammonium chloride (MACl) and formamidinium chloride (FACl) powders were placed separately on quartz boats in a chemical vapor deposition (CVD) system to react with the precursor films, successfully forming perovskite thin films. This research is divided into three parts. In Part (A), the effects of annealing the precursor films on hotplates at various temperatures were investigated, with the CVD process temperature fixed at 50°C. Experimental results demonstrate that when the precursor film is annealed at 40°C and reacted in the CVD system at 50°C for 185 minutes, the film surface exhibits the lowest porosity compared to other reaction times, proving that this low-temperature process yields optimal film quality. In Part (B), by varying the ratio of FACl in the precursor solution, the effects of different concentrations on the smoothness and compactness of the perovskite films were compared to identify the most suitable film structure for perovskite light-emitting diodes (PeLEDs). Subsequently, devices were fabricated using the smoothest FAxMA(1-x)PbCl3 perovskite films to measure their electrical performance and analyze the impact of concentration on device behavior. Finally, in Part (C), the hole transport layer of the devices was modified by stacking a layer of poly(9-vinylcarbazole) (PVK) on top of nickel oxide (NiOx), and all experimental steps from Part (B) were repeated. Through this comprehensive series of systematic studies and process optimizations, the quality of the perovskite thin films has been significantly enhanced, establishing a solid foundation for their application in light-emitting diodes.

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