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研究生：	吳義森 Wu, Eason
論文名稱：	釩酸釔摻雜稀土元素螢光粉與薄膜之發光特性探討 Luminescent properties of rare earth-activated YVO4-based phosphors and thin films
指導教授：	朱聖緣 Chu, Sheng-Yuan
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	中文
論文頁數：	77
中文關鍵詞：	白光螢光粉、薄膜、釩酸釔
外文關鍵詞：	rf-sputtering
相關次數：	點閱：53 下載：2
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摻雜稀土元素的釩酸釔螢光粉在近年來受到廣泛的注意，因為該螢光粉在UV及UVU的激發下，與商用螢光粉相比具有優異的發光效率及穩定性[1]。因此摻雜稀土元素的釩酸釔螢光粉是具有潛力發展適用於平面顯示器、電漿顯示器及場發射顯示器。
本論文使用固態反應法成功合成YVO4共摻雜Tm與Dy的白光螢光粉。並且探討發光中心Tm3+與Dy3+兩者之間的比例關係對CIE座標的影響，而其最佳白光值是在YVO4：0.01mol(Tm0.2Dy0.8)。由於VO43-團能有效的將能量轉移給發光中心Tm3+及Dy3+，因此能產生優異的白光。
最後利用RF-sputtering濺鍍系統將YVO4：0.01mol(Tm0.2Dy0.8)沉積為白光薄膜並探討其晶體結構及發光特性，尤其是成長壓力、射頻率功及退火溫度對薄膜的發光影響。而此薄膜製程參數在純Ar、成長壓力5 mtorr、射頻功率200W、基板溫度350℃、退火溫度800℃有最佳發光強度。

Rare earth-activated YVO4 phosphors have been attracting more attention in recent years because of their high luminescent intensities and stability under UV or UVU excitation as comparison with the conventional phosphors. Thus, rare earth-activated YVO4 phosphors have been considered as one possible luminescent material for flat display devices, such as plasma display panel (PDP) and field emission displays (FED).
In this thesis, we have employed solid state reaction method and successfully prepared Tm- and Dy-codoped YVO4 with high luminance of white light emission. The relationship between the ratio of Tm3+/Dy3+ and the chromaticity is also studied. The best white-light emission was observed with YVO4：0.01mol(Tm0.2Dy0.8). Since the energy is efficiently transferred from VO43- to the two dopants Tm3+ and Dy3+, YVO4：0.01mol(Tm0.2Dy0.8) exhibits a strong white light emission.
Additionally, we have investigated the morphological crystal structure and luminescent properties of YVO4：0.01mol(Tm0.2Dy0.8) thin film phosphors deposited by RF magnetron sputtering deposition. In particular, the effects of pressure, power and annealing temperature on luminescent properties of YVO4：0.01mol(Tm0.2Dy0.8) thin film phosphors have been examined. We concluded that the best white-light emission is achieved under the following conditions： pure Ar atmosphere, pressure of 5mtorr, RF power of 200W, substrate temperature of 350℃ and annealing temperature of 800℃.

中文摘要.................................................Ⅰ  
英文摘要.................................................Ⅱ
目錄.........................................................Ⅴ
圖目錄....................................................Ⅷ
表目錄..................................................ⅩⅠ
第一章	 緒論.............................................1
1-1  研究背景.............................................1
1-2  研究動機.............................................2
第二章  理論基礎........................................4
    2-1  發光的物理過程.................................4
    2-2  Franck-Condon principle........................6
    2-3  Stokes shift...................................7
    2-4  螢光與磷光.....................................8
    2-5  釩酸釔材料簡介.................................12
    2-6  稀土元素的種類與發光原理.......................12
    2-7  濺鍍理論.......................................16
        2-7-1  電漿反應.................................17
        2-7-2  濺鍍機制.................................17
        2-7-3  薄膜成長.................................20
第三章  實驗方法及步驟..................................24
    3-1  實驗藥品.......................................24
    3-2  製備YVO4：Tm、Dy螢光粉與螢光薄膜...............25
         3-2-1  製備YVO4：Tm、Dy螢光粉之步驟............25
         3-2-2  製備YVO4：Tm、Dy螢光薄膜之步驟..........26
         3-2-3  濺鍍步驟與濺鍍參數......................28
         3-2-4  退火處理方式............................29
    3-3  特性量測.......................................29
         3-3-1  結構性質量測............................29
         3-3-2  光學性質量測............................34
第四章	結果與討論......................................37
    4-1  YVO4：1mol% Tm3+螢光粉體探討...................37
         4-1-1  吸收與激發光譜..........................37
         4-1-2  結構分析與發射光譜......................38
    4-2  YVO4：1mol% Dy3+螢光粉體探討...................41
         4-2-1  吸收與激發光譜..........................41
         4-2-2  結構分析與發射光譜......................42
    4-3  YVO4：Tm3+、Dy3+螢光粉體共摻雜探討.............45
         4-3-1  前言....................................45
         4-3-2  YVO4:0.01mol(Tm0.8Dy0.2) 結構分析與發射光譜...46
         4-3-3  YVO4:0.01mol(TmxDy1-x) 結構分析、發射光譜、
CIE座標、Decay time.....................................47
    4-4  YVO4：Tm3+、Dy3+螢光薄膜探討...................51
         4-4-1  前言與實驗固定變因......................51
         4-4-2  不同成長壓力探討........................51
         4-4-3  不同射頻功率探討........................57
         4-4-4  不同退火溫度探討........................63
第五章  結論與未來展望..................................72
    5-1  結論...........................................72
    5-2  未來展望.......................................73
參考文獻................................................74
                                    

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校內：2011-07-14公開
校外：2011-07-14公開

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