本論文將討論使用乙二醇單甲醚(EGME)溶液法製備CZTS與CZTSSe薄膜作為基礎之吸收層，分別加入SnS、ZnS、Cu0.1Zn0.1SnS自成份緩衝層以及SnS+ZnS、SnS1ZnS2混合自成份緩衝層，形成鉬基板/自成份緩衝層/銅鋅錫硫(硒)吸收層之結構，探究不同緩衝層對薄膜特性、成份及結晶性的影響。透過SEM、EDS觀察晶粒大小及其元素含量比，同時藉由XRD、Raman及ESCA鑑定薄膜之晶體及鍵結結構，透過TEM的高解析成像能力，進行微束繞射分析和定性之化學元素分析。
本研究中使用的自成份緩衝層能有效提升薄膜結晶性與附著度，透過XRD與Raman確認薄膜結晶均為Kesterite結構之CZTS(Se)，且無發現雜次相存在；在TEM分析中觀察到使用ZnS與Cu0.1Zn0.1SnS緩衝層之CZTSSe薄膜剖面無分層且結晶性佳，其成份比例也呈現文獻中較佳之貧銅富鋅條件。但是在ESCA鍵結分析中觀察到薄膜表面含有與CZTSSe成份價數不同的銅鋅氧化合物，這表示即使XRD、Raman與TEM分析都指出薄膜成份為CZTSSe，但薄膜表面依然有雜質存在，這部分未來將透過控制前驅溶液元素比例與退火條件等方式改善CZTSSe之薄膜特性。

In this study, CZTS and CZTSSe films were prepared by 2-Methoxyethanol(EGME) solution as the absorption layer, and SnS, ZnS, Cu0.1Zn0.1SnS self-constituent buffer layer and SnS+ZnS and SnS1ZnS2 mixed self-constituent buffer layer were added respectively. The layer forms a film structure of Mo/Self-constituent buffer layer/CZTS(Se). The self-constituent buffer layer used in this study can effectively improve the crystallinity and adhesion of the thin film. It is confirmed by XRD and Raman that the thin film are CZTS(Se) of kesterite structure, and no secondary phase is found. It was observed in the TEM anaylsis that the CZTSSe thin film with ZnS and Cu0.1Zn0.1SnS buffer layer had no delamination and good crystallinity. In the ESCA bonding analysis, it was observed that the surface of thin film contained a copper-zinc-oxide compound having a different valence from the CZTSSe component. This result indicates that even though the XRD, Raman and TEM analyses indicate that thin film component is CZTSSe, the surface of thin film still have heterogeneous phase. In this part, thin film properties of CZTSSe will be improved by controlling the proportion of precursor solution and annealing conditions.

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