因應人工智慧、機器學習和物聯網（IoT）等科技的成熟和科技的日新月異，需要巨量資料運算的技術變得越來越普遍，對於低功耗和儲能元件的需求變得越來越高。多數的自供電光感測器以PN接面或PIN接面為主，製作上來說需要沉積較厚的P型層薄膜和N型層薄膜。若以和目前的半導體技術整合為前景，則該結構不利於今後元件的微縮化。因此，二維材料引起了學界與業界的高度關注。因為本身結構易於微縮化而能製作出極薄的奈米級元件，與目前尺度逐漸限縮的CMOS科技在製程上有較好的相容性，且由於P型二硫化鉬的薄膜需要相對較複雜的製程。本研究目標是以一步熱裂解方式嘗試調變不同的摻雜濃度製程參數以得到具有高遷移率的P型二硫化鉬薄膜，再透過鍍上電極的方式將PN同質接面的二硫化鉬作為自供電光感測器探討其效能。

With the rapid advancement of technologies such as artificial intelligence (AI), machine learning, and the Internet of Things (IoT), the demand for massive data processing has grown significantly. Consequently, the development of low-power consumption and energy storage devices has become increasingly critical. Most self-powered photodetectors rely on PN or PIN junctions, which typically require the deposition of relatively thick p-type and n-type semiconductor layers. However, such structures are not favorable for future device miniaturization, particularly when considering integration with current semiconductor technologies.
Two-dimensional (2D) materials have attracted substantial attention from both academia and industry due to their inherent advantages for scaling down, enabling the fabrication of ultra-thin, nanoscale devices. These materials offer better compatibility with existing CMOS fabrication processes, which are trending toward smaller feature sizes. Among them, p-type molybdenum disulfide (MoS2) remains challenging to fabricate due to the complexity of conventional doping techniques.
In this study, we propose a one-step thermal decomposition method to achieve p-type doping in MoS₂ thin films by modulating doping concentration through process parameter control. The goal is to obtain high-mobility p-type MoS2 films. A homojunction MoS2-based self-powered photodetector is then fabricated by depositing electrodes on the doped and intrinsic MoS2 layers, and its optoelectronic performance is systematically investigated.

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