本研究包含幾個部分，第一個部分為製作高介電常數感光型有機絕緣層。我們首先確認有機絕緣層高分子材料PVA與感光劑ADC之最佳混合比例，以製作出漏電流密度較低之有機絕緣層。而後我們以此有機絕緣層作為電晶體之閘極絕緣層，製作有機薄膜電晶體元件。
本研究的第二個部分為在有機薄膜電晶體元件加上保護層，分析其電性表現，我們發現不同的保護層成膜方法對於電晶體有很大的影響，所以我們選擇用真空乾燥的方式來使保護層成膜。再透過電性分析來探討環境對元件的影響。本研究的第三個部分為雙閘極電晶體元件製作。元件加上了保護層後，會造成電性上的衰退，所以我們希望透過第二個閘極形成第二個載子通道以彌補電性上的損失。我們製作出等效載子遷移率1.06 cm2/ Vs，開關電流比為1.6×103之有機薄膜雙閘極電晶體元件。最後以此元件來製作反相器電路，雙閘極元件為其Driver。經由電性分析，我們發現電晶體的臨界電壓會隨著上閘極電壓的不同而有所改變，而這影響著我們反相器輸出入轉換曲線，使我們可以找出適合數位電路應用的情形。

This study consists of four parts. In the first part, we intend to fabricate high-k, photosensitive dielectrics. First of all, we attempt to discover the best blending proportion of the photosensitive agent ADC to PVA for fabricating organic polymer dielectrics of low leackage current. Then we use this organic insulating layer as the transistor gate insulator layer of organic thin film transistor devices.
In the second part, we add possivation layer for producing organic thin film transistor. By analyzing the electric performance, We found that different methods for possivation layer have a great impact of thin film transistors. Therefore, we choose to use vacuum drying to encourage possivation layer. By analyzing the electric performance, we explore the impact of environment on the devices. In the third part, we fabricate double gate thin film transistor devices. After we add the possivation layer, the electrical property of devices lead to a recession. We hope that active layer form the second channel by the second gate to make up for the loss of electrical property. We eventually demonstrate high performance OTFTs of mobility 1.06 cm2/ Vs, and on-off ratio 1.6×103. In the last part, We use this device to create inverter circuit. We found that the threshold voltage have to change as the top gate voltage. That affects our input-output conversion curve of inverters. We can find a suitable condition for digital circuit application.

[1] J.H. Schan. J. H. Schon, Ch. Kloc and B. Batlogg, "On the Intrinsic Limits of Pantacene Field-effcet Transistors", Organic Electronic, Vol. 1, pp. 57-64, 2000.

[2] Adel. S. Sedra and Kenneth. C. Smith, Microelectronics Circuits, 5th ed., Oxford, 2003.

[3] 半導體元件物理與製作技術(第二版) 施敏 著

[4] F. Ebisawa, T. Kurokawa ,and S. Nara, “Electrical Properties of Polyacetylene/Polysiloxane Interface”, J. Appl. Phys. Vol. 54, pp. 3255-3259, 1983.

[5] A. Tsumura, H. Koezuka ,and T. Ando, ”Macromolecular electronic device : Field-Effect Transistor with a Polythiophene Thin Film”, Appl. Phys. Lett. Vol. 49, pp. 1210-1212, 1986

[6] H. Koezuka, A. Tsumura, and T. Ando, “Field-effect transistor with polythiophene thin film”Synth. Met. Vol. 18, pp.699-704, 1987
[7] G.. Horowitz, X. Z. Peng, D. Fichou, and F. Garnier, “Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors”, Syn. Met. Vol. 51, pp. 419-424, 1992

[8] Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, “Stacked pentacene layer organic thin-film transistors with improved characteristics”, IEEE Electron Device Letters, Vol. 18, pp. 606-608, 1997

[9] Z. Bao, A. Dodabalapur, and A.J. Lovinger, “Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility”, Appl. Phys. Lett. Vol. 69, pp. 4108-4110, 1987

[10] G. Horowitz, “ Organic Field-Effect Transistors”, Adv. Mater. Vol. 10, pp. 365-377, 1998

[11] S. S. Zumdahl, Chemistry. New Wun Ching Developmental Publishing, pp. 222, 2003.

[12] G. Horowitz, “Organic Field-Effect Transistors”, Adv. Mater. Vol. 10, pp. 365-377, 1998

[13] Donald A. Neamen, Semiconductor Physics & Devices, 3rd ed., McGraw Hill, 2003

[14] N. Koch, A. Kahn, J. Ghijsen, J.-J. Pireaux, J. Schwartz, R. L. Johnson, and A. Elschner, “Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism” Appl. Phys. Lett., Vol.82, pp.70-73, 2003

[15] H. Hamada, K. Hirano, N. Goda, H. Abe, I. Hasegawa, Y. Okita, S. Arioka, and T. Niina, “Reduction of the Off-State Current of Polysilicon Thin-Film Transistors by Means of a Polysilicon Buffer Layer,” Electronics Letters 29th, Vol. 30, pp. 1719-1720, 1994

[16] Sung Ki Kim, Young Jin Choi, Kyu Sik Cho, and Jin Jang, “Hydrogen Dilution Effect on the Properties of Coplanar Amorphous Silicon Thin-Film Transistors Fabricated by Inductively-Coupled Plasma CVD,”IEEE Transactions on Electron Devices, Vol. 46, pp. 1001-1006, 1999.

[17] Sung Ki Kim, Young Jin Choi, Won Kyu Kwak, Kyu Sik Cho, and Jin Jang, “A Novel Coplanar Amorphous Silicon Thin-Film Transistor Using Silicide Layers,” IEEE Electron Device Letters, Vol. 20, pp. 33-35, 1999.

[18] Young Jin Choi, Won Kyu Kwak, Kyu Sik Cho, Sung Ki Kim, and Jin Jang, “Hydrogenated Amorphous Silicon Thin-Film Transistor with a Thin Gate Insulator,” IEEE Electron Device Letters, Vol. 21, pp. 18-20, 2000.

[19] Kenji Sera, Fujio Okumura, Hiroyuki Uchida, Shinji Itoh, Setsuo Kaneko, and Kazuaki Hotta, “High-Performance TFT’s Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film,” IEEE Transactions on Electron Devices, Vol. 36, pp. 2868-2872, 1989.

[20] Jung In Han, Gi Young Yang, and Chul Hi Han, “A New Self-Aligned Offset Staggered Polysilicon Thin-Film Transistor,” IEEE Electron Device Letters, Vol. 20, pp. 381-383, 1999.

[21] Wen Jian Lin and Hsiung Kuang Tasi, “A New Process of Fabricating Inverted-Staggered Tri-Layer Thin Film Transistors,” IEEE Electron Device Letters, Vol. 16, pp. 133-135, 1995.

[22] Takashi Aoyama, Kazuhiro Ogawa, Yasuhiro Mochizuki, and Nobutake Konishi,“Inverse Staggered Poly-Si and Amorphous Si Double Structure TFT’s for LCD Panels with Peripheral Driver Circuits Integration,” IEEE Transaction on Electron Devices, Vol. 43, pp. 701-705, 1996.

[23] Chun Ting Liu, Chen Hua Douglas Yu, Avi Kornblit, and Kuo Hua Lee, “Inverted Thin-Film Transistors with a Simple Self-Aligned Lightly Doped Drain Structure,” IEEE Transaction on Electron Devices, Vol. 39, pp. 2803-2809, 1992.

[24] Y. Kaneko, K. Tsutsui, H. Matsumaru, H. Yamamoto, and T. Tsukada, “Amorphous Silicon Thin Film Transistor with a Buried Double-Gate Structure,” IEEE. IEDM, Vol. 89, pp. 337-340, 1989.

[25] Anish Kumar K. P., Johnny K. O. Sin, Cuong T. Nguyen, and Ping K. Ko, “Kink-Free Polycrystalline Silicon Double-Gate Elevated-Channel Thin-Film Transistors,” IEEE Transactions on Electron Devices, Vol. 45, pp. 2514-2520, 1998.

[26] Shengdong Zhang, Ruqi Han, Johnny K. O. Sin, Mansun Chan, “A Novel Self-Aligned Double-Gate TFT Technology,” IEEE Electron Device Letters, Vol. 22, pp. 530-532, 2001.

[27] E. M. Suuberg, “Vapor pressures and enthalpies of solution of polycyclic aromatic hydrocarbons and theirderivatives,＂ J. Chem. Eng. Data, vol.43, pp.486-492, 1998.

[28] Sandra E. Fritz, Stephen M. Martin, C. Daniel Frisbie, Michael D. Ward, ”Structural Characterization of a Pentacene Monolayer on an Amorphous SiO2 Substrate with Grazing Incidence X-ray Diffraction” J. AM. CHEM. SOC. Vol.126, pp. 4084-4085, 2004

[29] Iwao Yagi, Kazuhito Tsukagoshia, Yoshinobu Aoyagi, ”Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers” Thin Solid Films, Vol.467, pp.168-171, 2004

[30] C. D. Dimitrakopoulos and D. J. Mascaroz, “Organic thin-film transistors: A review of recent advances” IBM J. RES. & DEV., Vol.45, pp. 11-27, 2001

[31] Donald.L Smith, Thin-film deposition : principles and practice, McGraw-Hill, Inc

[32] J. Brandrup, E. H. Immergut, Polymer Handbook, 2nd Ed. A Wiley-Interscience Publication, pp. IV245-IV246, 1974

[33] S. H. Han, JH Kim, YR Son, “Solvent effect of the passivation layer on performance of an organic thin-film transistor”, Electrochemical and Solid-State Letters, Vol.10, pp.68-70, 2007

[34] Thomas Ernst, Sorin Cristoloveanu, “Ultimately Thin Double-Gate SOI MOSFETs”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 50, pp. 830-838, 2003

[35] M. Morana “Double-gate organic field-effect transistor”, Appl. Phys. Lett., Vol. 87, pp. 153511, 2005

[36] Lay-Lay Chua, Richard H. Friend “Organic double-gate field-effect transistors: Logic-AND operation” Appl. Phys. Lett., Vol. 87, pp. 253512, 2005

[37] Herman S. Mansur, Carolina M. Sadahira, Adriana N. Souza, Alexandra A.P. Mansur, “FTIR spectroscopy characterization of poly (vinyl alcohol) hydrogel with different hydrolysis degree and chemically crosslinked with glutaraldehyde” Materials Science and Engineering, Vol. 28, pp. 539-548, 2008

[38] Fatma Djouanid, Yaël Israëli, Lawrence Frezet, “New combined polymer_chromium approach for investigating the phototransformations involved in hologram formation in dichromated poly(vinyl alcohol)” Journal of Polymer Science: Part A: Polymer Chemistry, Vol.44, pp. 1317-1325, 2006

[39] HE Guanghua1, ZHENG Hua1, and XIONG Fuliang,” Preparation and Swelling Behavior of Physically Crosslinked Hydrogels Composed of Poly(vinyl alcohol) and Chitosan” Journal of Wuhan University of Technology-Mater, Vol. 23, pp. 816-820, 2008

[40] Frank-J. Meyer zu Heringdorf, M. C. Reuter & R. M. Tromp, “Growth dynamics of pentacene thin films” Nature, Vol. 412, pp. 517-520, 2001

[41] Sang Yoon, Kwonwoo Shin,Chan Eon Park,”The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics” ,Adv. Funct. Master., Vol. 15, pp. 1806-1814, 2005

[42] Jae Bon Koo, Chan Hoe Ku, Jung Wook Lim, and Seong Hyun Kim “Novel organic inverters with dual-gate pentacene thin-film transistor” , Organic Electronics, Vol. 8, pp. 552-558, 2007