本論文旨在研製一單相多階層飛馳電容型功率因數修正器，其架構優點為高功率密度、低開關電壓應力與低開關切換損失等。開關元件採用寬能隙功率半導體開關SiC，相較矽基功率半導體元件於相同切換頻率下有較低的功率損失，且其可操作於更高頻以達到更好的功率密度和效率。文中針對採用之電路架構進行模式分析，以及設計整體硬體電路，並基於功率因數修正技術之平均電流控制法，設計電流迴路控制器與電壓迴路控制器，以達到功率因數修正之效果與維持輸出電壓，且於原控制策略中結合相移脈波寬度調變技術使飛馳電容電壓可自然平衡於目標電壓，以得到降低開關電壓應力之特性。最後，透過電路模擬軟體驗證整體電路系統設計之可行性與正確性，以及實驗結果驗證整體電路系統在300 kHz切換頻率與單相110 V/ 60 Hz交流輸入下，輸出電壓為±200 V，且最大輸出功率約1 kW，此時系統效率約為95.12%，而功率因數約為0.941。

This thesis aims to implement a single-phase multilevel flying-capacitor power factor corrector (PFC) with advantages such as high-power density, reduced switching voltage stress, and low switching losses. SiC (Silicon Carbide) wide-bandgap (WBG) semiconductors are employed, which, compared to silicon-based devices, exhibit lower power losses and enable operation at higher frequencies, thereby achieving better power density and efficiency. The thesis includes detailed mode analysis and hardware design of the circuit. Average current control is utilized for power factor correction, with the design of current and voltage loop controllers to ensure power factor correction and maintain output voltage. Phase-shifted pulse width modulation (PSPWM) is integrated to naturally achieve the target flying capacitor voltage and further reduce switching voltage stress. The feasibility and accuracy of the design are verified through simulations and experimental results, which demonstrate operation at a switching frequency of 300 kHz with a single-phase 110 V/60 Hz AC input, an output voltage of ±200 V, a maximum output power of a 1 kW, an efficiency of about 95.12%, and a power factor of 0.941.

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