在本論文中，我們利用分子束磊晶法在蝕刻過的砷化鎵基板上長出高品質的硒化鋅緩衝層，並且在去氧化層時具有(4×1)的重建圖形，我們發現在雙晶x射線繞射分析中，硒化鋅緩衝層的週期性脈波數超過六，而且尖峰位置距砷化鎵800秒，這相當於是完全應力的情況。另外，關於臨界厚度值的量測，從x射線資料和從光激螢光譜求出的分別是1700埃和800埃，我們認為從光激螢光譜求臨界厚度較準確。
關於高品質的ZnSeTe/ZnSe量子井的成長和研究方面，在ZnSe0.99Te0.01中的束縛激子發光能量為2.67eV，5QW和3QW具有半高寬分別為184meV和171meV。若和晶格常數不匹配的ZnSeTe薄膜相比較，成長在ZnSe/GaAs層上的高品質ZnSSeTe乃是藉由將S元素加到磊晶層中而得以實現。我們發現ZnSSeTe的光激螢光譜變化對S元素較不敏感、對Te元素較敏感，我們也發現ZnSSeTe磊晶層不僅具有高品質而且能保有Ten束縛態的發光特性，再者，我們已畫出15K時ZnSSeTe磊晶層的一維組態座標圖，同時也比較ZnCdSeTe/GaAs系統和ZnSeTe/GaAs系統的晶格格子，我們認為ZnSSeTe磊晶層適合厚膜的應用。
對於n-型摻雜，在溫度120℃到160℃之間，淨施體載子的對數濃度和溫度有線性關係。當摻雜濃度從3×1018 cm-3 增加到 1.2×1019 cm-3時，在2.1eV的相對深層譜線增加約一百倍，另外，在摻雜高到1.2×1019 cm-3時，I2譜線的尖峰從2.8eV飄移到2.82eV，而且譜線變寬了，我們認為這是高摻雜在導帶和施體中建立起連續的能階所致。在另外一方面，當功率由110W增加到140W時，淨受體載子濃度漸漸飽和，在140W時，淨受體載子濃度為8×1017 cm-3，而且此值跟功率無關。關於接觸電極的研究，我們研究Au/AuBe和Au/AuBe/Cr的熱穩定度，並且發現在Au/AuBe中Zn擴散到樣品表面是電阻率增加的主因，換句話說，Au/AuBe/Cr具有可靠的熱穩定度適合元件的應用。
在Te的應用方面，分子束磊晶成長的高品質四元ZnSSeTe磊晶層首次被用來製作金半金光檢測器，我們發現元件操作在10V的反偏壓下，光電流對暗電流的對比超過十萬倍，最大的光響應是0.4A/W。另外，我們首次將濺鍍機成長的ITO膜鍍在n-ZnMgSSe上，用以製作金半金光檢測器，我們亦發現元件操作在10V的反偏壓下，光電流對暗電流的對比超過一萬倍，並且在10V的反偏壓下，最大的光響應在波長400nm時是0.27A/W，這個光響應值相當於外部量子效率為41.5%。
最後，我們已成功地製作出ZnCdSeTe/ZnSSe多重量子井橘光發光二極體，在室溫下15%的Te可以導致電激發光光譜有78nm的紅位移，再者，我們發現藉由調整量子井的數目可以調整發光二極體的顏色，(含ZnCdSe或ZnCdSeTe量子井)，並且主宰發光顏色的量子井是位於p-ZnSSe的旁邊，在x-y色度座標圖上，混色發光二極體的顏色跟最接近p-ZnSSe的量子井有很大的關係，另外，若ZnCdSeTe的量子井夠薄的話，其井中能階發光的機率將會增加。

In this dissertation, a high quality ZnSe buffer layer was grown onto the etched GaAs substrate by molecular beam epitaxy (MBE) while the etched substrate surface having a (4×1) reconstructed pattern during deoxidization. It was found that the orders of periodic fringes of the DCXRD spectrum of a ZnSe buffer layer are over six and that peak splitting between GaAs and ZnSe is 800 arc second which agrees well with the fully strained case. Furthermore, in the critical thickness (hc) determining, an hc value deduced from the x-ray data and from the PL data is about 1700 ? and 800 ?, respectively. It was concluded that the photoluminescence spectra are more sensitive to determine the critical thickness.
The high quality ZnSeTe/ZnSe multi quantum wells (MQWs) were also grown and investigated. The ZnSe0.99Te0.01 emission line due to Ten-cluster bound exciton is located at 2.67eV, and the full widths at half maximum (FWHM) are 184 meV and 171 meV for 5 QW and 3QW, respectively. Meanwhile, the high quality ZnSSeTe epilayer grown on ZnSe/GaAs layers was achieved by the incorporation of sulfur element into the epitaxial films comparing with the lattice-mismatched ZnSeTe films. It was found that the PL spectra of ZnSSeTe layer are basically not sensitive on the sulfur concentration but sensitive on Te content. It was also found that the ZnSSeTe epitaxial layers not only have excellent high crystal quality but also keep the emission properties of Ten-cluster bound state. Moreover, one-dimensional configuration coordinate diagram of the ZnSSeTe epitaxial layer at 15K have been drawn and compared the lattice of a ZnSSeTe/GaAs system with a ZnSeTe/GaAs system. It has been concluded that the ZnSSeTe epitaxial layer was suitable for thick film application.
For n-type doping, it was found that the net donor concentrations are logarithmic linearly dependent on the temperature from 120℃ to 160℃. When the doping concentration increases from 3×1018 cm-3 to 1.2×1019 cm-3, the related deep level emission at 2.1 eV increases about two orders. In addition, in such high doping concentration of 1.2×1019 cm-3, the peak of I2 line shift from 2.8 to 2.82 eV and get more broaden. It has been concluded that this emission associated with the continuous states built by heavy doping between the donor and conduction levels. On the other hand, the net acceptor concentration gradually saturated with increasing power from 110 W to 140 W. When the RF power was raised to about 140 W, the doping level, eventually, has been saturated at 8×1017 cm-3 and is independent on RF power. For contact study, thermal reliability of Au/AuBe and Au/AuBe/Cr were investigated. It was found that Zn out-diffusion toward sample surface is the main reason for the increase of ρc for Au/AuBe contact. In other words, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application.
In Te application, high quality quaternary ZnSSeTe epitaxial layers were successfully grown by MBE. A ZnSSeTe MSM photodetector was fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10V reverse bias. It was also found that the maximum photo responsivity is about 0.4 A/W under a 10V reverse bias. In addition, ITO layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ITO ZnMgSSe MSM photodetectors were fabricated for the first time. It was found that we could achieve a photocurrent-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. Moreover, the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.
Finally, the orange light emitting diodes (LEDs) have been successfully fabricated by using the ZnCdSeTe/ZnSSe MQWs. It was found that a 15% Te can result in a 78 nm EL red-shift at RT. Furthermore, It was found that we could modulate the color of LEDs by varying the well numbers (i.e. ZnCdSe, or ZnCdSeTe), and the dominated emission may be a nearest neighbor-well layer beside the p-ZnSSe layer. Therefore, the x-y values of chromaticity diagram of mixed color LEDs are located in the region strongly depending on what a nearest neighbor-well layer is. In addition, the probability of a ZnCdSeTe well-state emission may increase while the well thickness is thin enough.

chapter 1

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Chapter 2

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Chapter 3

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Chapter 4

[1] M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng, “Blue-green laser diodes”, Appl. Phys. Lett., Vol. 59(11), pp. 1272-1274, Sep. 1991.
[2] N. Nakayama, S. Itoh, T. Ohata, K. Makono, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda, and Y. Mori, “Room-temperature continuous operation of blue laser diodes”, Electron. Lett. Vol. 29(16), pp. 1488-1489, Aug. 1993.
[3] N. Nakayama, S. Itoh, T. Okuyama, M. Ozawa, T. Ohata, K. Makono, M. Ozawa, M. Ikeda, A. Ishibashi, and Y. Mori, “Continuous-wave operation of 489.9 nm blue laser diode at room temperature”, Electron. Lett. Vol. 29(25), pp. 2194-2195, Dec. 1993.
[4] A. Salokatve, H. Jeon, J. Ding, M. Hovinen, A. V. Nurmikko, D. C. Grillo, Li. He, J. Han, Y. Fan, M. Ringle, R. L. Gunshor, G. C. Hua, and N. Otsuka, “Continuous-wave room temperature ridge waveguide green-blue diode laser”, Electron. Lett., Vol. 29(25), pp. 2192-2194, Dec. 1993.
[5] E. Kato, H. Noguchi, M. Nagai, H. Okuyama, S. Kijima, and A. Ishibashi, “Significant progress in II-VI blue-green laser diode lifetime”, Electron. Lett. Vol. 34(3), pp. 282-284, Feb. 1998.
[6] M. Hovinen, J. Ding, A. Salokatve, A. V. Nurmikko, G. C. Hua, D. C. Grillo, Li He, J. Han, M. Ringle, and R. L. Gunshor, “On degradation of ZnSe-based blue green diode lasers”, J. Appl. Phys. Vol. 77(8), pp. 4150-4152, Apr. 1995.
[7] L. H. Kuo, L. Salamanca-Riba, B. J. Wu, G. M. Haugen, J. M. DePuydt, G. Hofler, and H. Cheng, “Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe-based films grown on GaAs”, J. Vac. Sci. Technol. B Vol. 13(4), pp. 1694, 1995.
[8] G. C. Hua, D. C. Grillo, T. B. Ng, C. C. Chu, J. Han, R. L. Gunshor, and A. V. Nurmikko, “Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs”, J. Elect. Mater. Vol. 25(2), pp. 263, 1996.
[9] L. Salamanca-Riba, and L. H. Kuo, “Observation of [100] and [010] dark line defects in optically degraded ZnSSe-based LEDs by transmission electron microscopy”, J. Elect. Mater. Vol. 25(2), pp. 239, 1996.
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Chapter 5

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Chapter 6

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Chapter 7

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Chapter 8

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