本研究是以陽極氧化鋁(Anodic aluminum oxide,AAO)模板進行電鍍，製作銅銦硒(CuInSe2,CIS)奈米柱陣列，以奈米結構提升CuInSe2材料有效能帶，進而提升其應用於太陽能電池效率。以鋁基板進行陽極氧化反應，經拋光蝕刻等製程，能有效地移除阻擋層使模板與工作金極具有良好接觸。CuInSe2沉積技術，為達到大範圍且均勻沉積及材料比例正確之成果，討論有機物二甲基亞碸(DMSO)濃度及調整工作週期(duty cycle)對於CuInSe2材料比例及沉積均勻探討分析，並於最後移除多孔氧化鋁模板。
　　陽極氧化鋁模板孔徑約80-100nm，厚度經九小時陽極氧化反應約24-27μm，調變DMSO濃度及工作週期(duty cycle)進行沉積CuInSe2，填孔率可達約92%，沉積後可達1-1.5μm，速率約95nm/min，CuInSe2材料比例經量測分析，其Cu:In:Se約為1:1:2，為CuInSe2最佳比例。

We successfully fabricated ternary CuInSe2 nanowire arrays in a novel acidic Dimethyl sulfoxide (DMSO)-aqueous electrolyte using pulse electrodeposition techniques with the assistance of an anodized aluminum oxide (AAO) template and investigated the effects of deposition potential and a DMSO additive on the composition and crystallization of CuInSe2 nanowires.The addition of DMSO into the electrolyte significantly affects the pore-filling ratio and the growth rate of CuInSe2 nanowires. Proposed mechanism for the growth mechanism of nanowires deposited in the electrolyte with DMSO was presented on the basis of kinetic and thermodynamic process. Photoelectrochemical (PEC) characterizations showed that the CuInSe2 nanowires deposited in the electrolyte containing 0.5 mM DMSO exhibited a superior photocurrent response than the CuInSe2 nanowires deposited in the electrolyte without DMSO.

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