本論文研究以十六氟銅苯二甲藍（Copper hexadecafluorophthalocyanine, F16CuPc）作為主動層之有機薄膜電晶體的電傳輸性質。第一部份，採用下閘極式具有氧化銦錫（Indium tin oxide, ITO）底部接觸的源汲極元件結構，研究元件通道長度效應與電傳輸特性。第二部份，將F16CuPc成長於不同溫度的二氧化矽（SiO2）介電層表面，研究F16CuPc薄膜結構與元件電性間的關係。
第一部分，製作具有不同通道長度的F16CuPc電晶體元件，利用金屬氧化半導體場效電晶體元件理論，計算元件電性參數，發現場效載子漂移率與臨界電壓皆隨著元件通道長度的增加而上升。並且使用閘極轉移法（gated-Transfer Length Method, gated-TLM）萃取出接觸電阻與通道電阻，發現ITO與F16CuPc的接觸電阻大於F16CuPc的通道電阻，並考慮接觸電阻來校正場效載子漂移率，發現電極與有機半導體的接觸面對於元件效能的影響甚大，且接觸電阻對短通道元件的影響大於長通道元件。
第二部份，利用改變基板溫度從30至180 ℃，成長數個F16CuPc薄膜，並製作相對應的底部接觸式元件，使用紫外光可見光吸收光譜、拉曼散射光譜與原子力顯微鏡研究薄膜分子微結構與形態學，發現成長於120 ℃基板F16CuPc薄膜有最佳的載子遷移率，拉曼光譜結果指出苯環內C-C 振動於1193 cm-1與1540 cm-1兩譜線於120 ℃基板成長的F16CuPc薄膜有最小的半高寬，指出較均勻的分子微結構，可能有利載子傳輸。

In this study, we have studied the thin-film structure and electronic transport properties of n-type copper hexadecafluorophthalocyanine (F16CuPc) organic semiconductor. In Part I, electrical characterization and carrier transport properties of F16CuPc-based organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with indium tin oxide (ITO) bottom source and drain contact. In Part II, we have fabricated various F16CuPc films on silicon dioxide (SiO2) gate dielectric surface with variable temperature. We have studied the correlation between the thin-film structure and electronic transport properties of the corresponding F16CuPc-based OTFTs.
In Part I, we have fabricated F16CuPc-based OTFTs with various channel length rang from 5 m to 100 m and channel width of 500  m. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the saturation and the linear field-effect mobility mobility and threshold voltage of F16CuPc-based OTFTs increased with increasing channel length. Further, the contact resistance and channel resistance of F16CuPc transistors were extracted using gated-transfer length method. The results of our experiments suggest that the contact resistance between F16CuPc and ITO electrodes plays important role in current-voltage characteristics. Comparison of the corrected and without corrected field-effect motilities for F16CuPc-based OTFTs, the contact effect for the short channel device is significantly larger than the long channel devices.
In Part 2, the F16CuPc films were thermally evaporated on SiO2 surfaces with various substrate temperature in the range of 30 to 180 ℃. These F16CuPc films were characterized by absorption spectroscopy, micro-Raman spectroscopy, and atomic force microscopy. In order to study characteristics of the carrier transport properties for corresponding F16CuPc films, we have realized OTFTs structures with ITO-bottom source and drain electrodes. We observed the optimized field-effect mobility of F16CuPc-based OTFTs when the substrate temperature was 120 ℃. At the same time, we have observed the smallest half-width of aromatic C-C stretching at 1193 cm-1 and 1540 cm-1 bands, indicating a more homogeneous microstructure associated with lower molecular relaxation energy could benefit carrier transportation.

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