本論文討論兩種輕元素共價鍵材料：氮化碳化矽（SiCN）與氮化氧化矽（SiON）分別應用於高溫、發光電子元件及深次微米互補式金氧半（CMOS）電晶體元件之研究。

　　對於氮化碳化矽薄膜之研究，吾人利用快速升溫化學氣相沈積（RTCVD）的方法在矽基板上成長結晶性矽基三元材料-氮化碳化矽薄膜，並以此研製氮化碳化矽/單晶矽的異質結構元件。首先，配合使用三種不同氣體Methysilane（SiCH6）、Acetylene（C2H4）、Propane（C3H8）來作為碳原子的來源，於矽基板上成長氮化碳化矽薄膜，並利用不同的材料特性分析方法來找到最佳成長條件。經實驗結果得知以C3H8成長之氮化碳化矽薄膜品質較佳，且其成本遠較其餘兩者低廉，因此選擇以C3H8作為成長元件的碳原子來源氣體。

　　接著吾人以此氮化碳化矽/單晶矽的異質結構成長技術為基礎，成功的製作出氮化碳化矽MSM（Metal-Semiconductor-Metal）光檢測器與p-氮化碳化矽/n-單晶矽二極體之高溫元件，在200℃高溫環境下，不論是PN二極體的反向崩潰電壓或MSM光導體的明暗電流比，均佳於直接成長於矽晶圓之碳化矽元件者。此外，吾人也研究了n-氮化碳化矽之金半接觸特性，成功的研製出n-氮化碳化矽/p-單晶矽異質接面二極體與氧化銦鋅（IZO）/ n-氮化碳化矽蕭特基二極體之發光元件，此兩種發光二極體皆能發出短波長的紫色光，證明氮化碳化矽材料在短波長光源的應用上潛力無窮。

　　此外，吾人以利用遠距電漿氮化法（Remote Plasma Nitridation）處理的超薄氮化氧化矽薄膜作為CMOS元件之閘極介電層，並對其元件之電特性與可靠度加以分析。實驗發現利用較低溫度並添加氦氣之遠距電漿氮化製程，較適合應用於現階段深次微米CMOS技術。因為以此遠距電漿氮化製程處理過的氮化氧化矽介電層能降低有效氧化層厚度與閘極漏電流，並同時確保元件之可靠度。

　　In this dissertation, we report the investigation of two light-elements covalently bonded materials i.e. nitrided SiC (SiCN) and nitrided SiO2 (SiON) in the applications of electronic devices and deep submicron CMOS devices, respectively.

　　Firstly, we study the preparation and characteristic of the cubic crystalline nitrided SiC (SiCN) films. The SiCN films have been grown on silicon substrate using various carbon sources by rapid-thermal chemical vapor deposition (RTCVD). The characteristics of the SiCN films grown with Methysilane(SiCH6), Acetylene(C2H4), and Propane(C3H8) are examined and compared. The experimental results show that the differences of chemical composition and chemical bonding state are co-related to the C bonding type of the different carbon source, and the SiCN film employed C3H8 gas possesses the most available for electronic devices and other applications. In addition, correlations between the growing stages to the microstructure of the cubic crystalline SiCN films have been illustrated in detail.
Then based on the developed technique, two SiCN thin film devices i.e. SiCN/Si MSM (metal-semiconductor-metal) photo-detector and SiCN/Si pn heterojunction diode (HJD) were fabricated on silicon substrate. The properties of above-mentioned devices are better than the β-SiC MSM photo-detector and HJDs on Si for high temperature applications. We attribute this to the gradual Si-rich SiCN layer formed automatically during depositing SiCN film eliminates the large lattice mismatch (20%) between SiCN and Si substrate, thus improving performances at room temperature. In addition, the lattice matched interface and the wide band gap property of SiCN film provide the SiCN/Si hetero-epitaxial structure as the most promising application for high temperature.

　　Next, we report the ohmic and Schottky contacts to the deposited SiCN films in detail. Two prototypical blue-violet light-emitting devices with SiCN material based on the study are developed. Both PL (photo luminescence) measurement and EL (electro luminescence) photograph are used to evaluate the devices’ optical performance. These experimental results indicate the potential applications of SiCN for advanced blue and ultra-violet (UV) optoelectronic devices.

　　Finally, we study the effect of remote plasma nitridation (RPN) process on characteristics of ultrathin gate dielectric CMOSFETs with the thickness in the range of 18Å~22Å. On the other end, the effects of RPN temperature and He plus on nitrogen-profile within the nitrided SiO2 gate dielectric films have been investigated. Experimental results show that He can enhance the low-temperature RPN process to reduce gate current and thin effective thickness of gate dielectric films, especially for thinner gate dielectric films. In addition, the He plus RPN process can keep the ultra thin gate dielectric film’s integrity even under high-density plasma environment.

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