本論文分析與研製應用於低壓製程之射頻電漿電源，電路採用三級架構：第一級為昇壓型功率因數校正器；第二級為非對稱半橋直流/直流轉換器；第三級為E類射頻換流器。功率因數校正器使輸入具高功率因數並提供直流電壓；第二級非對稱半橋轉換器將功率因數校正器輸出直流電壓轉換為換流器輸入直流電壓，藉由控制此級轉換器輸出直流電壓大小可控制電漿功率，最後由E類換流器將直流電壓轉換為13.56 MHz之交流射頻電源至負載。
本文先針對非對稱半橋轉換器寬範圍輸出作設計，使其輸出電壓具寬電壓範圍，並分析零電壓切換之E類換流器其開關電壓應力、開關電流應力與輸出電流相移角的關係，以設計對低開關電流應力，降低功率元件之導通損，以提升效率。最後，研製之系統先於射頻電漿等效負載測試其特性，輸出30 W ~ 300 W之功率變化，並將換流器實際連接反應性離子蝕刻真空腔體，證明此系統應用於真空電漿反應器之特性。

In this thesis, a low-pressure radio-frequency plasma power supply is analyzed and implemented. The plasma power system consists of three stages, including the first stage of a boost power factor correction (PFC) circuit, the second stage of asymmetrical half-bridge(ASHB) DC-DC converter, and the third stage is Class-E inverter. The PFC circuit achieves high power factor and provides DC bus voltage for the secondary stage. The asymmetrical half-bridge converter in the second stage converts the bus voltage into controllable DC voltage. By adjusting the DC output voltage of the asymmetrical half-bridge converter, the plasma power can be controlled. Class-E inverter converts DC voltage into 13.56 MHz AC radio frequency power to the load.
The design of the wide output voltage range asymmetrical half-bridge converter is presented, and the ZVS Class-E inverter is analyzed. The phase angle between the resonant current and the input voltage of resonant tank is analyzed, so lower current stress is realized to reduce the conduction loss from power switch and device. The hardware prototype is first tested with a plasma equivalent load in a output power range of 30 W~300 W, then the system is applied to a reactive ion etcher (RIE) plasma chamber to verify that system is feasible for low pressure plasma reactors.

[1]S. M. Rossnagel, J. J. Cuomo, and W. D. Westwood, Handbook of plasma processing technology: fundamentals, etching, deposition, and surface interactions: William Andrew, 1990.
[2]D. Petreus, A. Grama, S. Cadar, E. Plaian, and A. Rusu, "Design of a plasma generator based on E power amplifier and impedance matching," in Optimization of Electrical and Electronic Equipment (OPTIM), 2010 12th International Conference on, 2010, pp. 1317-1322.
[3]Y. R. Yang and W.Y. Lee, "A DC-pulse power supply designed for plasma applications," in Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on, 2009, pp. 1086-1090.
[4]M. T. Tsai and C.W. Ke, "Design and implementation of a high-voltage high-frequency pulse power generation system for plasma applications," in Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on, 2009, pp. 1556-1560.
[5]J. Y. Lee, S.J. Huang, and F.S. Pai, "Design of plasma power for an atmospheric pressure dielectric barrier discharge," in Power Electronics and Drive Systems (PEDS), 2011 IEEE Ninth International Conference on, 2011, pp. 824-827.
[6]N. O. Sokal, "Class-E RF power amplifiers," QEX Commun. Quart, pp. 9-20, 2001.
[7]N. O. Sokal and A. D. Sokal, "Class EA new class of high-efficiency tuned single-ended switching power amplifiers," Solid-State Circuits, IEEE Journal of, vol. 10, pp. 168-176, 1975.
[8]捷胤工業. 乾式蝕刻技術.
[9]郭福升, "大面積常壓電漿技術之研究," 2003.
[10]洪昭南 and 郭有斌, "電漿反應器與原理," 化工技術, vol. 9, p. 156, 2001.
[11]許藝菊, "梁詠翔-常壓電漿原理, 技術與應用. ppt," 2012.
[12]M. Hirayama, K. Ino, and T. Ohmi, "Analysis of RF plasma using electrical equivalent circuit," in Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on, 1995, pp. 283-286.
[13]D. B. Ilic, "Impedance measurement as a diagnostic for plasma reactors," Review of Scientific Instruments, vol. 52, pp. 1542-1545, 1981.
[14]李孟儒, "RF電漿源的功率匹配研究," 碩士, 電機工程學系, 國立東華大學, 花蓮縣, 2002.
[15]D. G. Reed, The ARRL handbook for radio communications: Amer Radio Relay League, 2002.
[16]D. M. Pozar, Microwave and RF design of wireless systems: John Wiley & Sons, Inc., 2000.
[17]K. L. Shen, "DC-pulse power supply for AC/DC plasma application," Electrical Engineering, 2001.
[18]M. K. Kazimierczuk, RF power amplifiers: Wiley, 2008.
[19]M. K. Kazimierczuk and D. Czarkowski, Resonant power converters: Wiley-IEEE Press, 2012.
[20]D. J. Kessler and M. K. Kazimierczuk, "Power losses and efficiency of class-E power amplifier at any duty ratio," Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 51, pp. 1675-1689, 2004.
[21]I. Boonyaroonate, T. Fukami, and S. Mori, "Class E isolated DC-DC converter using PWM synchronous rectifier," in Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on, 2000, pp. 252-255.
[22]Y. F. Li, "Auto-tuning controller design of class E inverter with resonant components varying," in Industrial Electronics (ISIE), 2012 IEEE International Symposium on, 2012, pp. 217-221.
[23]N. Mohan and T. M. Undeland, Power electronics: converters, applications, and design: John Wiley & Sons, 2007.
[24]K. Sakakibara and Y. Kuwata, "Series resonant converter," ed: Google Patents, 1987.
[25] 曾偉碩, "空載低損耗不對稱半橋電源轉換器之研究," 2003.
[26] M. Albulet, RF power amplifiers: Noble Pub, 2001.
[27] A. Grebennikov and N. O. sokal, "Switchmode RF power amplifiers," 2007.
[28]M. Kazimierczuk and K. Puczko, "Exact analysis of class E tuned power amplifier at any Q and switch duty cycle," Circuits and Systems, IEEE Transactions on, vol. 34, pp. 149-159, 1987.
[29]N. O. Sokal and F. H. Raab, "Harmonic output of class-E RF power amplifiers and load coupling network design," Solid-State Circuits, IEEE Journal of, vol. 12, pp. 86-88, 1977.
[30]A. Mediano, P. Molina-Gaudó, and C. Bernal, "Design of class E amplifier with nonlinear and linear shunt capacitances for any duty cycle," Microwave Theory and Techniques, IEEE Transactions on, vol. 55, pp. 484-492, 2007.
[31]B. Klehn, "A Precise Analysis of a Class E Amplifier," Rochester instutute of technology, 2009.
[32]N. O. Sokal, "Class-E high-efficiency RF/microwave power amplifiers: Principles of operation, design procedures, and experimental verification," in Analog Circuit Design, Springer, 2003, pp. 269-301.