隨著現代MOSFET技術中關鍵尺寸的不斷縮小導致S / D金屬接觸電阻率上升，它可以直接影響MOSFET元件運作快與慢的性能,。因此，金屬矽化物成為MOSFET元件中的主要重要因素之一。根據元件的繼續微缩，矽化物面臨一些問題需要克服，我們需要尋找新材料，獲得低薄層電阻，熱穩定性，低溫形成矽化物，低電阻率，高濃度摻雜使源極/汲極的肖特基勢壘降低。在本論文中，選擇下一個世代材料候選者矽化鈀金探討以上特性。
首先，使用四點探針儀測量進行退火過基材單晶矽（100）上磊晶Si0.7Ge0.3（50nm），並在700℃下獲得最佳活化溫度。鈀金屬和鈦金屬在該處理過的基板上分別沉積不同厚度的5nm，10nm和15nm，在不同溫度下進行兩階段快速熱退火形成金屬矽化物，通過四點探針得到薄層電阻測量結果，發現熱穩定性在800℃〜950℃，700℃有擴散現象， 200℃~400℃活化矽化鈀熱穩定度高，500℃時也表現出外擴散現象，然後用TLM法測量所有樣品的IV曲線，檢測樣品電性能，我們得到TiSi2（20nm）在700℃退火溫度時的低電阻率為3.842E-05Ωcm2 與Pd2Si（15nm）在400℃ 退火溫度時的低電阻率5.616E-07 Ωcm2，XRD顯示了矽化物的相形成和能夠了解擴散機制，AFM分析薄膜的粗糙度以及矽化物形成聚集現象的信息，通過TEM確認形成矽化物並知道矽化物厚度。

As continuous shrinking of critical dimension in modern MOSFET technology cause the S/D metal contact resistivity getting high, it can directly affects the performance of the MOSFET device. Therefore, metal silicide become one of the main important role in MOSFET devices. According to device shrink, silicide face some problem and need to overcome, we need finding new materials, getting low sheet resistance, thermal stability，forming silicide in low temperature, low resistivity, low schottky barrier high in heavy doping source and drain. In this work, choose the next candidate source/ drain germanium based palladium silicide and detect the question above.
Firstly, use the four point probe instrument measure the annealed substrate which was insitu doped boron epi Si0.7Ge0.3 (50nm) on mono crystal Si(100),and get the best activation temperature at 700℃. palladium metal and titanium metal separately deposit with the different thickness 5nm,10nm and 15nm on this processed substrate, Do two step rapid thermal annealing with different temperature to form metals silicide, through four point probe get sheet resistance measurement result found thermal stable at 800℃~950℃, a little diffusion on 700℃ and palladium silicide activation on 200℃~400℃, also show thermal stable and out-diffusion phenomenon at 500℃, then use TLM method measure IV curve of all sample to detect the sample electrical properties, we get the low resistivity
3.842E-05Ωcm2 at 700℃ of TiSi2 (20nm) and 5.616E-07 Ωcm2 at 400℃ of Pd2Si (15nm), XRD shows the phase forming and diffusion mechanism of silicide, by AFM know the roughness of film silicide and get the information of segregation of film, by TEM confirm forming silicide and know the silicide thickness.

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